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Lecture 03 - Semiconductor Diodes (Part II)

The document covers the characteristics and behavior of semiconductor diodes, including static and dynamic resistance, Q-point operation, and equivalent circuits. It also discusses the reverse recovery time of diodes, Zener diodes, and light-emitting diodes (LEDs), detailing their operational principles and applications. Additionally, exercise problems are provided for further practice on the concepts discussed.

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0% found this document useful (0 votes)
8 views22 pages

Lecture 03 - Semiconductor Diodes (Part II)

The document covers the characteristics and behavior of semiconductor diodes, including static and dynamic resistance, Q-point operation, and equivalent circuits. It also discusses the reverse recovery time of diodes, Zener diodes, and light-emitting diodes (LEDs), detailing their operational principles and applications. Additionally, exercise problems are provided for further practice on the concepts discussed.

Uploaded by

mdkawsarsarkar53
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 22

EEE/ETE 111 Analog Electronics I

Lecture 3:
Semiconduct
or Diodes
(Part II)
Jilan Samiuddin
Assistant Professor
North South University

Credit: Electronic Devices and Circuit Theory (11 th edition), R. L. Boylestad, L. Nashelsky
Resistance Levels
• As the operating point of a diode moves
from one region to another the resistance
of the diode will also change due to the
nonlinear shape of the characteristic curve.
• DC or Static Resistance () of the diode at
the operating point can be found simply by
finding the corresponding levels of and :

• The DC resistance of a diode is independent of the


shape of the characteristic in the region surrounding
the point of interest. 2
Example 1.3

3
AC or Dynamic Resistance ()
• The varying AC input will move the
instantaneous operating point up and
down a region of the characteristics
• With no applied varying signal, the
point of operation would be the Q-point

• In general, therefore, the lower the Q-point of


operation (smaller current or lower voltage),
the higher is the ac resistance.
4
Note: Q-point is derived from the word quiescent , which means “still or unvarying.”
Example 1.4

5
using derivative
1. Taking derivative of Shockley’s equation:

2. In the vertical slope of the characteristics,

3. Flipping the result to define a resistance ratio () gives

4. Substituting and (for )

The dynamic resistance can be found simply by substituting the 6


quiescent value of the diode current into the equation.
comparison using graph and
derivative
• Using the example graph, for , the tangent line
is drawn as shown and a swing of 5mA above
and below the specified diode current is chosen.
At , , and at , . Therefore,

• Using the derivative equation:

• The difference of about 1 ohm could be treated


as the contribution of body resistance () which
is the resistance of the semiconductor material
itself.
7
Average AC Resistance ()
• If the input signal is sufficiently large
to produce a broad swing as shown,
the resistance associated with the
device for this region is called the
average ac resistance.
• The average ac resistance is the
resistance determined by a straight
line drawn between the two
intersections established by the
maximum and minimum values of
input voltage.

8
Exercise Problem 30

9
Exercise Problem 32

In general, the lower the Q-point of operation


(smaller current or lower voltage), the higher is
the ac resistance. Therefore, our finding matches
with the statement.
10
Equivalent Circuits of Diode
1. Piecewise-Linear Equivalent Circuit:
• Since a silicon semiconductor diode does not
reach the conduction state until reaches 0.7 V
with a forward bias, a battery opposing the
conduction direction must appear in the
equivalent circuit.
• The battery simply specifies that the voltage
across the device must be greater than the
threshold battery voltage before conduction
through the device in the direction dictated by
Note: can usually
the ideal diode can be established. be determined from
the specification
• When conduction is established, the resistance sheet.
of the diode will be the specified value of .
• If (a forward conduction current for the diode) at
,

11
Equivalent Circuits (contd.)
2. Ideal Equivalent Circuit: It establishes that a 0.7V level can
often be ignored in comparison to the applied voltage level

3. Simplified Equivalent Circuit: It states that a forward biased


silicon diode in an electronic system under dc conditions has a
drop of 0.7 V across it in the conduction state at any level of
diode current

12
Exercise Problem 36

13
Reverse Recovery Time ()
• Reverse Recovery Time is the time a diode takes to stop
conducting current after the voltage across it is suddenly
reversed (from forward bias to reverse bias).
• If the applied voltage should be reversed to establish a reverse-
bias situation, we would ideally like to see the diode change
instantaneously from the conduction state to the nonconduction
state.
• However, because of the large number of minority carriers in
each material, the diode current will simply reverse (, determined
by network parameters) and stay at this measurable level for
time (storage time) required for the minority carriers to return
to their majority-carrier state in the opposite material.
• When the storage phase has passed, the current will be reduced
in level to that associated with the nonconduction state within a
transition interval .
• Thus,
• This is an important consideration in high-speed switching
applications. Moreover, a high causes energy loss (as heat) 14
during switching.
Exercise Problem 45

15
Zener Diode
• Designed to work safely in reverse bias (backward
direction), unlike regular diodes that only allow
current to flow in the forward direction
• It can maintain a fixed voltage across its terminals,
even when the input voltage or load changes
• Operation:
• Blocks current until the voltage reaches its Zener voltage
()
• At , it "breaks down" and allows current to flow in reverse,
while keeping the voltage across it fixed at
• Every Zener diode is designed with a specific
breakdown voltage (1.8V to 200V)
• The location of the Zener region can be controlled by
varying the doping levels.
• Once the input voltage exceeds , the diode "clamps" the 16
voltage to , protecting the circuit from overvoltage.
Zener Diode with Equivalent
Model
• Forward-bias region: Zener diode
behaves like a regular diode, i.e., it
conducts current once the forward
voltage exceeds ≈0.7V (for silicon)
• Reverse Bias Region, below : The
diode blocks most current but a tiny
leakage current flows. In the
equivalent model, a large resistor ()
representing the leakage path is used
which is equivalent to an open-circuit
• Reverse Bias Region, above :
There is a slight slope to the
characteristics requiring the
piecewise equivalent model. The
series resistive element can be
ignored and the reduced equivalent
model of just a dc battery of volts 17
employed.
Zener Potential
• Zener voltage (in the table) simply indicates that it is a typical average value.
• Since this is a 20% diode, the Zener potential can be expected to vary as 10V20%
• The Zener potential of a Zener diode is very sensitive to the temperature of
operation.

(10-V, 500-mW, 20% Zener diode)

18
Example 1.5

19
Exercise Problem 54

20
Light-Emitting Diode (LED)
• An LED emits light when it is forward biased, which can be in the
infrared or visible spectrum
• LED and semiconductor diodes work exactly similar in reverse
bias region
• In a forward-biased LED, free electrons cross the junction and fall
into holes
• As these electrons fall from a higher to a lower energy level, they radiate
energy
• In an LED, the energy is radiated as light
• The color of the light depends on the bandgap of the diode material

21
Exercise Problems
Solve these problems
• Exercise problems: 4, 15, 16, 17, 18, 19, 21, 27, 28, 30, 31,
32, 33, 34, 35, 36, 37, 38, 45, 54, 55

22

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