SPICE MODEL of 1MBH03D-120 (Professional+FWDP Model) in SPICE PARK
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The document presents a device modeling report for the insulated gate bipolar transistor (IGBT) 1MBH03D-120 manufactured by Fuji Electric, detailing various electrical characteristics such as transfer characteristics, fall time, gate charge, saturation, output, forward current, and reverse recovery. Simulation results are included for each characteristic along with corresponding measurement comparisons and error percentages. All rights to the report are held by Bee Technologies Inc.
SPICE MODEL of 1MBH03D-120 (Professional+FWDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBH03D-120 MANUFACTURER: Fuji Electric *REMARK: Free-Wheeling Diode (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 2. Transfer Characteristics Circuit Simulation result 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 U2 1MBH03D-120 D1MBH03D-120_P VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.050 8.000 7.913 -1.09 2.650 10.000 9.981 -0.19 5.800 12.000 12.039 0.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 4. Fall Time Characteristics Circuit Simulation result 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A 2.0us 3.0us 4.0us 5.0us 6.0us I(RL) Time Evaluation circuit RL Rg U1 U2 239 1MBH03D-120 D1MBH03D-120_P V1 = -15 V2 = 15 43 TD = 0 V1 TR = 10n VCE TF = 10n 600Vdc PW = 3u PER = 20u 0 Test condition: IC=2.5 (A), VCC=600 (V) Parameter Unit Measurement Simulation %Error tf us 0.250 0.253 1.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 5. Gate Charge Characteristics Circuit Simulation result 25V 20V 15V 10V 5V 0V 0 20n 40n 60n 70n V(W1:1) Time*1mA Evaluation circuit V2 0 U1 U2 I1 1MBH03D-120 D2 D1MBH03D-120_P Dbreak 2.5 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 600 PW = 5m ION = 0A 0 Test condition: VCC=600 (V), IC=2.5 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 12.000 11.979 -0.18 Qgc nc 11.000 10.833 -1.52 Qg nc 33.500 34.220 2.15 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 6. Saturation Characteristics Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(IC) V(IC:-) Evaluation circuit U1 U2 1MBH03D-120 D1MBH03D-120_P IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1.00 2.100 2.098 -0.11 2.00 2.600 2.612 0.46 3.00 3.050 3.033 -0.57 4.00 3.400 3.412 0.34 5.00 3.800 3.797 -0.07 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 8. Output Characteristics Circuit Simulation result 5.0A 20V 15V 4.0A 12V 3.0A 10V 2.0A 1.0A VGE=8V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(U1:C) V_VCE Evaluation circuit U1 U2 VCE 1MBH03D-120 5Vdc D1MBH03D-120_P 15Vdc VGE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 9. FWD Forward Current Characteristics Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(Vsense) V(EC) Evaluation circuit Vsense EC V1 0Vdc V2 U2 0Vdc D1MBH03D-120_P U1 1MBH03D-120 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 10. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 0.4 1.450 1.485 2.41 1 1.800 1.786 -0.77 2 2.100 2.094 -0.31 3 2.350 2.330 -0.86 4 2.550 2.537 -0.52 5 2.700 2.728 1.02 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 11. Reverse Recovery Characteristics Circuit Simulation result 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A -0.5A -1.0A -1.5A -2.0A -2.5A -3.0A -3.5A -4.0A 5.16us 5.24us 5.32us 5.40us 5.48us 5.56us I(FWD) Time Evaluation circuit L2 1 2 2nH U3 D1MBH03D-120_P IC = 2.5 1500uH FWD 2 1 C L1 VCE 200 Rg U1 U2 1MBH03D-120 D1MBH03D-120_P V1 = -15 V2 = 15 2 TD = 5u V1 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=200 (V), IC=2.5 (A), di/dt=-100A/usec Parameter Unit Measurement Simulation %Error trr nsec 75.000 74.886 -0.15 Irr A 3.000 2.936 -2.13 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009