SPICE MODEL of 1MBH03D-120 (Professional+FWDS Model) in SPICE PARK
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The document is a device modeling report for the insulated gate bipolar transistor (IGBT) part number 1MBH03D-120 from Fuji Electric. It includes circuit simulation results, comparison graphs, test conditions, and measurement data, detailing characteristics such as transfer, fall time, gate charge, saturation, output, forward current, and reverse recovery. The report emphasizes the accuracy of simulation results with associated percentage errors across various operational parameters.
SPICE MODEL of 1MBH03D-120 (Professional+FWDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBH03D-120 MANUFACTURER: Fuji Electric *REMARK: Free-Wheeling Diode (Standard Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 2. Transfer Characteristics Circuit Simulation result 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 D1 1MBH03D-120 D1MBH03D-120 VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.050 8.000 7.883 -1.46 2.650 10.000 9.981 -0.19 5.800 12.000 12.039 0.32 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 4. Fall Time Characteristics Circuit Simulation result 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A 2.0us 3.0us 4.0us 5.0us 6.0us I(RL) Time Evaluation circuit RL Rg U1 D1 239 1MBH03D-120 D1MBH03D-120 V1 = -15 V2 = 15 43 TD = 0 V1 TR = 10n VCE TF = 10n 600Vdc PW = 3u PER = 20u 0 Test condition: IC=2.5 (A), VCC=600 (V) Parameter Unit Measurement Simulation %Error tf us 0.250 0.253 1.2 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 5. Gate Charge Characteristics Circuit Simulation result 25V 20V 15V 10V 5V 0V 0 20n 40n 60n 70n V(W1:1) Time*1mA Evaluation circuit V2 0 U1 D3 I1 1MBH03D-120 D2 D1MBH03D-120 Dbreak 2.5 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 600 PW = 5m ION = 0A 0 Test condition: VCC=600 (V), IC=2.5 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 12.000 11.979 -0.18 Qgc nc 11.000 10.833 -1.52 Qg nc 33.500 34.219 2.15 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 6. Saturation Characteristics Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(IC) V(IC:-) Evaluation circuit U1 D1 1MBH03D-120 D1MBH03D-120 IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1.00 2.100 2.098 -0.11 2.00 2.600 2.612 0.46 3.00 3.050 3.033 -0.57 4.00 3.400 3.412 0.34 5.00 3.800 3.797 -0.07 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 8. Output Characteristics Circuit Simulation result 5.0A 20V 15V 4.0A 12V 3.0A 10V 2.0A 1.0A VGE=8V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(U1:C) V_VCE Evaluation circuit U1 D1 VCE 1MBH03D-120 5Vdc D1MBH03D-120 15Vdc VGE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 9. FWD Forward Current Characteristics Circuit Simulation result 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V I(Vsense) V(EC) Evaluation circuit Vsense EC V1 0Vdc V2 D1 0Vdc D1MBH03D-120 U1 1MBH03D-120 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 10. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 0.4 1.450 1.485 2.39 1 1.800 1.786 -0.79 2 2.100 2.093 -0.33 3 2.350 2.329 -0.89 4 2.550 2.536 -0.55 5 2.700 2.727 0.98 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 11. Reverse Recovery Characteristics Circuit Simulation result 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A -0.5A -1.0A -1.5A -2.0A -2.5A -3.0A -3.5A -4.0A 5.16us 5.24us 5.32us 5.40us 5.48us 5.56us I(FWD) Time Evaluation circuit L2 1 2 2nH U2 D2 1MBH03D-120 D1MBH03D-120 IC = 2.5 1500uH FWD 2 1 C L1 VCE 200 Rg U1 D1 1MBH03D-120 D1MBH03D-120 V1 = -15 V2 = 15 2 TD = 5u V1 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=200 (V), IC=2.5 (A) di/dt=-100A/usec Parameter Unit Measurement Simulation %Error trr ns 75.000 36.660 -51.12 Irr A 3.000 3.044 1.47 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009