SPICE MODEL of 1MBH10D-120 (Professional+FWDP Model) in SPICE PARK
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The document is a device modeling report for an insulated gate bipolar transistor (IGBT) part number 1MBH10D-120 by Fuji Electric, featuring multiple circuit simulation results and test conditions for various characteristics such as transfer, fall time, gate charge, saturation, output, forward current, and reverse recovery. It includes measurement versus simulation comparisons highlighting percentage errors for different parameters. The report concludes with detailed graphs and tables to illustrate the simulation results and their accuracy.
SPICE MODEL of 1MBH10D-120 (Professional+FWDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBH10D-120 MANUFACTURER: FUJI ELECTRIC *REMARK: Free-Wheeling Diode (Professional Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 1
- 2. Transfer Characteristics Circuit Simulation result 20A 15A 10A 5A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 1MBH10D-120 U2 VCE D1MBH10D-120_P 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 2
- 3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.000 8.000 8.194 2.43 7.500 10.000 10.000 0.00 20.000 11.600 11.567 -0.28 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 3
- 4. Fall Time Characteristics Circuit Simulation result 10A 5A 0A 4.0us 4.5us 5.0us 5.5us 6.0us 6.5us 7.0us I(RL) Time Evaluation circuit RL Rg U1 59.8 1MBH10D-120 V1 = -15 U2 V2 = 15 16 D1MBH10D-120_P TD = 0.5u V1 TR = 10n VCE TF = 1n 600Vdc PW = 4u PER = 20u 0 Test condition: IC=10 (A), VCC=600 (V) Parameter Unit Measurement Simulation %Error tf us 280.000 287.618 2.72 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 4
- 5. Gate Charge Characteristics Circuit Simulation result 20V 15V 10V 5V 0V 0 20n 40n 60n 80n 100n 120n 140n V(W1:1) Time*1mA Evaluation circuit V2 0 IC D2 U1 Dbreak 10 1MBH10D-120 U2 I1 = 0 D1MBH10D-120_P I2 = 1m W1 W TF = 10n + IOFF = 100uA TR = 10n ION = 0A VCC TD = 0 I2 - PER = 700m 600 PW = 7m 0 Test condition: VCC=600 (V), IC=10 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 18.000 18.293 1.63 Qgc nc 53.000 51.707 -2.44 Qg nc 100.000 100.006 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 5
- 6. Saturation Characteristics Circuit Simulation result 20A 15A 10A 5A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(IC) V(IC:-) Evaluation circuit U1 1MBH10D-120 IC U2 0Adc D1MBH10D-120_P VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 6
- 7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) Ic(A) %Error Measurement Simulation 1 1.375 1.381 0.44 2 1.575 1.566 -0.60 5 2.000 2.005 0.23 10 2.525 2.524 -0.04 20 3.400 3.400 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 7
- 8. Output Characteristics Circuit Simulation result 20A 20V 15V 12V 15A 10A 10V 5A VGE=8V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(R1) V_VCE Evaluation circuit R1 0.001m U1 1MBH10D-120 VCE U2 5Vdc D1MBH10D-120_P VGE 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 8
- 9. FWD Forward Current Characteristics Circuit Simulation result 20A 15A 10A 5A 0A 0V 1.0V 2.0V 3.0V 4.0V I(Vsense) V(EC) Evaluation circuit Vsense V1 EC 0Vdc 0Vdc V2 U1 1MBH10D-120 U2 D1MBH10D-120_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 9
- 10. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 1 1.220 1.221 0.07 2 1.375 1.381 0.41 5 1.670 1.669 -0.05 10 2.010 1.993 -0.83 15 2.265 2.262 -0.13 20 2.500 2.507 0.27 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 10
- 11. Reverse Recovery Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A -2A -4A -6A 5.24us 5.32us 5.40us 5.48us 5.56us 5.64us I(FWD) Time Evaluation circuit L2 1 2 2uH U3 D1MBH10D-120_P L1 1500uH FWD 2 1 IC = 10 C VCE 600 Rg U1 1MBH10D-120 V1 = -15 U2 V2 = 15 110 D1MBH10D-120_P TD = 5u V1 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=600 (V), IC=10 (A), -di/dt=100 (A/us) Parameter Unit Measurement Simulation %Error trr nsec 88.000 87.629 -0.42 Irr A 5.000 4.987 -0.26 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 11