SPICE MODEL of 1MBH10D-120 (Professional+FWD+SP Model) in SPICE PARK
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The document provides detailed simulation results and characteristics for the insulated gate bipolar transistor (IGBT) part number 1MBH10D-120 manufactured by Fuji Electric. It includes transfer characteristics, fall time, gate charge, output characteristics, forward current characteristics, and reverse recovery characteristics, along with comparison tables and graphs that show measurement against simulation data with small error percentages. All data and analyses are copyrighted by Bee Technologies Inc. in 2010.
SPICE MODEL of 1MBH10D-120 (Professional+FWD+SP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBH10D-120 MANUFACTURER: FUJI ELECTRIC * REMARK: Free-Wheeling Diode (Special Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 1
- 2. Transfer Characteristics Circuit Simulation result 20A 15A 10A 5A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 1MBH10D-120 U2 VCE D1MBH10D-120_SP 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 2
- 3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.000 8.000 8.194 2.43 7.500 10.000 10.000 0.00 20.000 11.600 11.567 -0.28 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 3
- 4. Fall Time Characteristics Circuit Simulation result 10A 5A 0A 4.0us 4.5us 5.0us 5.5us 6.0us 6.5us 7.0us I(RL) Time Evaluation circuit RL Rg U1 59.8 1MBH10D-120 V1 = -15 U2 V2 = 15 16 D1MBH10D-120_SP TD = 0.5u V1 TR = 10n VCE TF = 1n 600Vdc PW = 4u PER = 20u 0 Test condition: IC=10 (A), VCC=600 (V) Parameter Unit Measurement Simulation %Error tf us 280.000 288.069 2.88 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 4
- 5. Gate Charge Characteristics Circuit Simulation result 20V 15V 10V 5V 0V 0 20n 40n 60n 80n 100n 120n 140n V(W1:1) Time*1mA Evaluation circuit V2 0 IC D2 U1 Dbreak 10 1MBH10D-120 U2 I1 = 0 D1MBH10D-120_SP I2 = 1m W1 W TF = 10n + IOFF = 100uA TR = 10n ION = 0A VCC TD = 0 I2 - PER = 700m 600 PW = 7m 0 Test condition: VCC=600 (V), IC=10 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 18.000 18.293 1.63 Qgc nc 53.000 51.707 -2.44 Qg nc 100.000 100.006 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 5
- 6. Saturation Characteristics Circuit Simulation result 20A 15A 10A 5A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(IC) V(IC:-) Evaluation circuit U1 1MBH10D-120 IC U2 0Adc D1MBH10D-120_SP VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 6
- 7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) IC (A) %Error Measurement Simulation 1 1.375 1.381 0.44 2 1.575 1.566 -0.60 5 2.000 2.005 0.23 10 2.525 2.524 -0.04 20 3.400 3.400 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 7
- 8. Output Characteristics Circuit Simulation result 20A 20V 15V 12V 15A 10A 10V 5A VGE=8V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(R1) V_VCE Evaluation circuit R1 0.001m U1 1MBH10D-120 VCE U2 5Vdc D1MBH10D-120_SP VGE 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 8
- 9. FWD Forward Current Characteristics Circuit Simulation result 20A 15A 10A 5A 0A 0V 1.0V 2.0V 3.0V 4.0V I(Vsense) V(EC) Evaluation circuit Vsense V1 EC 0Vdc 0Vdc V2 U1 1MBH10D-120 U2 D1MBH10D-120_SP 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 9
- 10. Comparison Graph Simulation result Comparison table VF (V) IF(A) %Error Measurement Simulation 1 1.220 1.221 0.07 2 1.375 1.381 0.41 5 1.670 1.669 -0.05 10 2.010 1.993 -0.83 15 2.265 2.262 -0.13 20 2.500 2.507 0.27 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 10
- 11. Reverse Recovery Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A -2A -4A -6A 5.24us 5.32us 5.40us 5.48us 5.56us 5.64us I(Vsense) Time Evaluation circuit R1 Vsense PARAMETERS: V1 = -1200V TR = 0.2u 120 V2 = 1200V TD = 5.37us U1 D1MBH10D-120_SP TR = {TR} TF = 10n V1 VPULSE PW = 10u PER = 1ms 0 Test condition: VCC=1200 (V), IC=10 (A), -di/dt=100 (A/us) Parameter Unit Measurement Simulation %Error trr nsec 88.000 88.568 0.65 Irr A 5.000 4.982 -0.36 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 11