ILD1/2/5

QUAD CHANNEL ILQ1/2/5

DUAL CHANNEL

PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
Current Transfer Ratio at IF=10 mA
ILD/Q1, 20% Min.
ILD/Q2, 100% Min.
ILD/Q5, 50% Min.
High Collector-Emitter Voltage
ILD/Q1: BVCEO=50 V
ILD/Q2, ILD/Q5: BVCEO=70 V
Field-Effect Stable by TRansparent IOn
Shield (TRIOS) Isolation Test Voltage, 5300
VACRMS
Underwriters Lab File #E52744
V

VDE 0884 Available with Option 1

D E
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage ................................................6 V
Forward Current ...........................................60 mA
Surge Current ................................................. 2.5 A
Power Dissipation.......................................100 mW
Derate Linearly from 25C..................... 1.3 mW/C
Detector
Collector-Emitter Reverse Voltage
ILD/Q1 ........................................................... 50 V
ILD/Q2, ILD/Q5...............................................70 V
Collector Current .......................................... 50 mA
Collector Current (t<1 ms)...........................400 mA
Power Dissipation.......................................200 mW
Derate Linearly from 25C......................2.6 mW/C
Package
Isolation Test Voltage (between
emitter and detector referred to
standard climate 23C/50%RH,
DIN 50014) .................................... 5300 VACRMS
Creepage ............................................... min. 7 mm
Clearance............................................... min. 7 mm
Isolation Resistance
VIO=500 V, TA=25C ......................... RIO=1012
VIO=500 V, TA=100C ....................... RIO=1011
Package Power Dissipation ...................... 250 mW
Derate Linearly from 25C..................... 3.3 mW/C
Storage Temperature................... 40C to +150C
Operating Temperature ................40C to +100C
Junction Temperature.................................... 100C
Soldering Temperature
(2 mm from case bottom) .......................... 260C

Dimensions in inches (mm)

Dual Channel
Pin One I.D.
4

1
Anode 1

.268 (6.81)
.255 (6.48)

8 Emitter

Cathode 2

7 Collector

Cathode 3

6 Collector

Anode 4

.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)

5 Emitter
.305 Typ.
(7.75) Typ.

.150 (3.81)
.130 (3.30)
4 Typ.

.135 (3.43)
.115 (2.92)
10 Typ.

.040 (1.02)
.030 (.76 )

.022 (.56)
.018 (.46)

.100 (2.54) Typ.

39
.012 (.30)
.008 (.20)

Quad Channel
Pin One I.D.

.268 (6.81)
.255 (6.48)

.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)

15 Collector

Cathode 3

14 Collector

Anode 4

13 Emitter

Anode 5

12 Emitter

Cathode 6

11 Collector

Cathode 7

10 Collector
9 Emitter

Anode 8
.150 (3.81)
.130 (3.30)

.305 Typ.
(7.75) Typ.
.135 (3.43)
.115 (2.92)

4 Typ.
.022 (.56)
.018 (.46)

16 Emitter

Anode 1

Cathode 2

10 Typ.
.040 (1.02)
.030 (.76 )
.100 (2.54) Typ.

39
.012 (.30)
.008 (.20)

DESCRIPTION
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared
LEDs and silicon NPN phototransistor. Signal information, including a DC
level, can be transmitted by the drive while maintaining a high degree of
electrical isolation between input and output. The ILD/Q1/2/5 are especially
designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be
used to replace relays and transformers in many digital interface applications such as CRT modulation. The ILD1/2/5 has two isolated channels in a
single DIP package and the ILQ1/2/5 has four isolated channels per package.
See Appnote 45, How to Use Optocoupler Normalized Curves.

51

Characteristics
Symbol

Min.

Typ.

Max.

Unit

Condition

Emitter
Forward Voltage

VF

1.25

1.65

IF=60 mA

Reverse Current

IR

0.01

10

VR=6 V

Capacitance

C0

25

pF

VR=0 V, f=1 MHz

Thermal Resistance, Junction to Lead

RTHJL

750

C/W

Capacitance

CCE

6.8

pF

VCE=5 V, f=1 MHz

Leakage Current, Collector-Emitter

ICEO

50

nA

VCE=10 V

Saturation Voltage, Collector-Emitter

VCESAT

0.25

0.4

ICE=1 mA, IB=20 A

DC Forward Current Gain

HFE

200

650

1800

VCE= 10 V, IB=20 A

Saturated DC Forward Current Gain

HFESAT

120

400

600

VCE= 0.4 V, IB=20 A

Thermal Resistance, Junction to Lead

RTHJL

Detector

C/W

500

Package Transfer Characteristics (Each Channel)

Symbol

Min.

Typ.

Max.

Unit

Condition

IF=10 mA, VCE=0.4 V

IF=10 mA, VCE=10 V

IF=10 mA, VCE=0.4 V

IF=10 mA, VCE=10 V

IF=10 mA, VCE=0.4 V

IF=10 mA, VCE =10 V

ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter)

CTRCESAT

Current Transfer Ratio (Collector-Emitter)

CTRCE

75
20

90

300

ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter)

CTRCESAT

Current Transfer Ratio (Collector-Emitter)

CTRCE

170
100

200

500

ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter)

CTRCESAT

Current Transfer Ratio (Collector-Emitter)

CTRCE

100
50

130

400

Isolation and Insulation

Common Mode Rejection, Output High

CMH

5000

V/s

VCM=50 VP-P, RL=1 k, IF=0 mA

Common Mode Rejection, Output Low

CML

5000

V/s

VCM=50 VP-P, RL=1 k, IF=10 mA

Common Mode Coupling Capacitance

CCM

0.01

pF

Package Capacitance

CIO

0.8

pF

VIO=0 V, f=1 MHz

ILD/Q1/2/5

52

Typical Switching Times

Figure 1. Non-saturated switching timing
VCC=5 V
IF=10 mA
VO
RL=75

F=10 KHz,
DF=50%

Figure 2. Non-saturated switching timing

IF

VO

t PHL

t PLH

tS
50%

tF

tR

tD

Figure 3. Saturated switching timing

F=10 KHz,
DF=50%

VCC=5 V

ILD/Q1
IF=20 mA

ILD/Q2
IF=5 mA

ILD/Q5
IF=10 mA

Unit

Delay, tD

0.8

1.7

1.7

Rise time, tR

1.9

2.6

2.6

Storage, tS

0.2

0.4

0.4

Fall Time, tF

1.4

2.2

2.2

Propagation
H-L, tPHL

0.7

1.2

1.1

Propagation
L-H, tPLH

1.4

2.3

2.5

Characteristic

ILD/Q1
IF=20 mA

ILD/Q2
IF=5 mA

ILD/Q5
IF=10 mA

Unit

Delay, tD

0.8

1.7

Rise time, tR

1.2

Storage, tS

7.4

5.4

4.6

Fall Time, tF

7.6

13.5

20

Propagation
H-L, tPHL

1.6

5.4

2.6

Propagation
L-H, tPLH

8.6

7.4

7.2

Condition

VCE=5 V
RL=75 k
50% of VPP

Condition

VCE=0.4 V
RL=1 k
VCC=5 V
VTH=1.5 V

Figure 5. Normalized non-saturated and saturated

CTR at TA=25C versus LED current

RL
IF=10 mA

Characteristic

1.4

Vf-Forward Voltage - V

VO

Figure 4. Saturated switching timing

IF

1.3

Ta = -55C

1.2
1.1

Ta = 25C

1.0
0.9

Ta = 100C

0.8
0.7
.1

tD

VTH =1.5 V

tS

tF

CTRNF - Normalized CTR Factor

t PLH

t PHL

10

100

Figure 6. Normalized non-saturated and saturated

CTR at TA=25C versus LED current

tR

VO

If - Forward Current - mA

1.5

Normalized to:
Vce = 10V, IF = 10mA
Ta = 25C
CTRce(sat) Vce = 0.4V

1.0

0.5
NCTR(SAT)
NCTR
0.0
.1

10

100

IF - LED Current - mA
ILD/Q1/2/5

53

Figure 10. Collector-emitter current versus temperature and LED current

Figure 7. Normalized non-saturated and saturated

CTR at TA=50C versus LED current

35

Ice - Collector Current - mA

Normalized to:
Vce = 10V, IF = 10mA, Ta = 25C
CTRce(sat) Vce = 0.4V
1.0

Ta = 50C

0.5
NCTR(SAT)
NCTR

30
25

50C

20
15

85C

10
5
0
0

0.0
.1

1
10
IF - LED Current - mA

100

Iceo - Collector-Emitter - nA

Normalized to:
Vce = 10V, IF = 10mA
Ta = 25C
CTRce(sat) Vce = 0.4V

60

10 4
10 3
10 2

Vce = 10V

10 1

TYPICAL

10 0

0.5
Ta = 70C
NCTR(SAT)
NCTR

10 -1

10 -2
-20

0.0
.1

1
10
IF - LED Current - mA

100

tPLH - Propagation Low-High - s

Normalized to:
Vce = 10V, IF = 10mA, Ta = 25C
CTRce(sat) Vce = 0.4V

0.5

0.0
.1

Ta = 85C
NCTR(SAT)
NCTR
1
10
IF - LED Current - mA

20

40

60

80

1000

1.5

1.0

100

Ta - Ambient Temperature - C

Figure 12. Propagation delay versus collector load

resistor

Figure 9. Normalized non-saturated and saturated

CTR at TA=85C versus LED current
NCTR - Normalized CTR

50

10 5

1.5
CTR - Normalized CTR Factor

10
20
30
40
IF - LED Current - mA

Figure 11. Collector-emitter leakage current versus

temperature

Figure 8. Normalized non-saturated and saturated

CTR at TA=70C versus LED current

1.0

70C

25C

100

2.5

Ta = 25C, IF = 10mA
Vcc = 5V, Vth = 1.5V
tPLH
100

2.0

10

1.5
tPHL

1
.1

10

1.0
100

tPHL - Propagation High-Low - s

CTRNF - Normalized CTR Factor

1.5

RL - Collector Load Resistor - K

ILD/Q1/2/5

54