AP30G120ASW
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
Features
High Speed Switching
VCES
Low Saturation Voltage
V CE(sat)=2.9V@IC=30A
CO-PAK, IGBT With FRD
RoHS Compliant
IC
1200V
30A
C
TO-3P
Absolute Maximum Ratings
Symbol
E
Rating
Parameter
Units
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
+30
IC@TC=25
Continuous Collector Current
60
IC@TC=100
Continuous Collector Current
30
ICM
Pulsed Collector Current1
120
IF@TC=100
Diode Continunous Forward Current
IFM
Diode Pulse Forward Current
40
PD@TC=25
Maximum Power Dissipation
208
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
TL
Maximum Lead Temp. for Soldering Purposes
300
, 1/8" from case for 5 seconds .
Notes:
[Link] width limited by max . junction temperature .
Thermal Data
Parameter
Symbol
Rthj-c(IGBT)
Value
Units
0.6
/W
Thermal Resistance Junction-Case
Rthj-c(Diode) Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
/W
40
/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
IGES
Parameter
Gate-to-Emitter Leakage Current
Test Conditions
VGE=+30V, VCE=0V
ICES
Collector-Emitter Leakage Current
VCE=1200V, VGE=0V
mA
VCE(sat)
Collector-Emitter Saturation Voltage
VGE=15V, IC=30A
2.9
3.6
VGE=15V, IC=60A
3.7
VCE=VGE, IC=250uA
VGE(th)
Gate Threshold Voltage
Min.
-
Typ.
-
Max. Units
+500
nA
Qg
Total Gate Charge
IC=30A
63
100
nC
Qge
Gate-Emitter Charge
VCC=500V
12
nC
Qgc
Gate-Collector Charge
32
nC
td(on)
Turn-on Delay Time
40
ns
tr
Rise Time
45
ns
td(off)
Turn-off Delay Time
125
ns
tf
Fall Time
VGE=15V
VCC=600V,
Ic=30A,
VGE=15V,
RG=5,
Inductive Load
430
860
ns
Eon
Turn-On Switching Loss
1.3
mJ
Eoff
Turn-Off Switching Loss
3.1
mJ
Cies
Input Capacitance
VGE=0V
1400
2240
pF
Coes
Output Capacitance
VCE=30V
120
pF
Cres
Reverse Transfer Capacitance
f=1.0MHz
15
pF
V
Electrical Characteristics of Diode@Tj=25(unless otherwise specified)
VF
Forward Voltage
IF=6A
2.6
VF
Forward Voltage
IF=20A
trr
Reverse Recovery Time
IF=10A
54
ns
Qrr
Reverse Recovery Charge
di/dt = 100 A/s
138
nC
Data and specifications subject to change without notice
1
201107182
AP30G120ASW
160
120
20V
18V
15V
IC , Collector Current (A)
120
12V
80
V GE =10V
40
20V
18V
15V
T C =150 C
100
IC , Collector Current (A)
T C =25 C
80
12V
60
V GE =10V
40
20
0
0
12
16
20
V CE , Collector-Emitter Voltage (V)
12
16
V CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
V GE = 15 V
V GE =15V
VCE(sat) ,Saturation Voltage(V)
IC , Collector Current(A)
100
80
T C =25
T C =150
60
40
20
I C = 60 A
4
I C =30A
3
0
0
10
40
80
120
160
Junction Temperature ( C)
V CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
2400
I C =1mA
2000
Capacitance (pF)
Normalized VGE(th) (V)
1.6
1.2
0.8
1600
C ies
1200
800
0.4
400
C oes
C res
0
-50
50
100
Junction Temperature ( C )
Fig 5. Gate Threshold Voltage
150
13
17
21
25
29
33
37
V CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP30G120ASW
1
1000
Normalized Thermal Response (Rthjc)
V GE =15V
IC, Peak Collector Current(A)
T C =125 o C
100
10
Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
10
100
1000
10000
0.00001
0.0001
0.001
V CE , Collector-Emitter Voltage(V)
0.01
0.1
t , Pulse Width (s)
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
10
10
TC=150oC
VCE , Collector-Emitter Voltage(V)
VCE , Collector-Emitter Voltage(V)
o
T C =25 C
I C = 60 A
I C = 30 A
I C = 15 A
I C = 60 A
4
I C = 30 A
I C = 15 A
0
0
12
16
20
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
12
16
20
Fig 10. Saturation Voltage vs. VGE
16
VGE , Gate -Emitter Voltage (V)
100
IF , Forward Current (A)
V GE , Gate-Emitter Voltage(V)
10
T j =150 o C
T j =25 o C
I C = 30 A
V CC =500V
12
0.1
0
20
40
60
V F , Forward Voltage (V)
Q G , Gate Charge (nC)
Fig11. Forward Characteristic of
Fig 12. Gate Charge Characterisitics
80
Diode
3
AP30G120ASW
IC , Maximum DC Collector Current (A)
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature ( )
Fig 13. Maximum Collector Current VS.
Case Temperature
