VNQ690SP

QUAD CHANNEL HIGH SIDE SOLID STATE RELAY

TYPE VNQ690SP
(*) Per each channel
I

RDS(on) 90m (*)

IOUT 10 A

VCC 36 V

OUTPUT CURRENT PER CHANNEL: 10A I CMOS COMPATIBLE INPUTS I OPEN LOAD DETECTION (OFF STATE) I UNDERVOLTAGE & OVERVOLTAGE n SHUT- DOWN I OVERVOLTAGE CLAMP I THERMAL SHUT-DOWN I CURRENT LIMITATION I VERY LOW STAND-BY POWER DISSIPATION I PROTECTION AGAINST: n LOSS OF GROUND & LOSS OF VCC I REVERSE BATTERY PROTECTION (**) DESCRIPTION The VNQ690SP is a monolithic device made by using| STMicroelectronics VIPower M0-3 ABSOLUTE MAXIMUM RATING
Symbol VCC -VCC IOUT IR IIN ISTAT IGND

10

PowerSO-10 ORDER CODES

PACKAGE PowerSO-10 TUBE VNQ690SP T&R VNQ690SP13TR

Technology, intended for driving resistive or inductive loads with one side connected to ground. This device has four independent channels. Builtin thermal shut down and output current limitation protect the chip from over temperature and short circuit.

Parameter Supply voltage (continuous) Reverse supply voltage (continuous) Output current (continuous), per each channel Reverse output current (continuous), per each channel Input current Status current Ground current at TC<25C (continuous) Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT - STATUS - OUTPUT - VCC Power dissipation at TC=25C Maximum Switching Energy (L=0.38mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=14A) Junction operating temperature Storage temperature

Value 41 -0.3 Internally limited -15 +/- 10 +/- 10 -200 4000 4000 5000 5000 78 53 -40 to 150 -65 to 150

Unit V V A A mA mA mA V V V V W mJ C C

VESD

Ptot EMAX Tj Tstg

(**) See application schematic at page 8

April 2003

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VNQ690SP

BLOCK DIAGRAM
VCC

OVERVOLTAGE UNDERVOLTAGE DEMAG 1

DRIVER 1

OUTPUT 1 ILIM1 DEMAG 2

INPUT 1 INPUT 2 INPUT 3 INPUT 4 STATUS STATUS

DRIVER 4 DRIVER 2

OUTPUT 2 ILIM2 DEMAG 3

LOGIC
DRIVER 3

OUTPUT 3 ILIM3 DEMAG 4

OVERTEMP. 1 OVERTEMP. 2 OVERTEMP. 3 OVERTEMP. 4

OUTPUT 4 ILIM4

OPEN LOAD OFF-STATE

GND

CURRENT AND VOLTAGE CONVENTIONS

IS IIN1 INPUT 1 VCC OUTPUT 1 VIN1 VIN2 IIN2 INPUT 2 IIN3 INPUT 3 VIN3 IIN4 INPUT 4 VIN4 STATUS VSTAT OUTPUT 4 GND VOUT4 OUTPUT 3 VOUT3 IOUT4 OUTPUT 2 IOUT3 IOUT1 IOUT2 VOUT1 VOUT2 VCC

ISTAT

IGND

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VNQ690SP

CONNECTION DIAGRAM (TOP VIEW)

STATUS INPUT 4 INPUT 3 INPUT 2 INPUT 1

6 7 8 9 10 11 VCC

5 4 3 2 1

GND OUTPUT 4 OUTPUT 3 OUTPUT 2 OUTPUT 1

THERMAL DATA
Symbol Rthj-case Rtj-amb Parameter Thermal resistance junction-case (MAX) per channel Thermal resistance junction-ambient (MAX) Value 2 52 (***) Unit C/W C/W

(***) When mounted on a standard single-sided FR-4 board with 50 mm of Cu (at least 35 m thick).

ELECTRICAL CHARACTERISTICS (VCC=6V up to 24V; -40C<Tj<150C unless otherwise specified) POWER (per each channel)
Symbol VCC (#) VUSD (#) VUVhyst (#) VOV (#) VOVhyst (#) Parameter Operating supply voltage Undervoltage shutdown Undervoltage hysteresis Overvoltage shutdown Overvoltage hysteresis Test Conditions Min 6 3.5 0.2 36 0.25 Typ 13 4.6 Max 36 6 1 Unit V V V V V A A mA m m A A A A

Off state; VIN=VOUT=0V; VCC=13.5V IS (#) Supply current Off state; VIN=VOUT=0V; VCC=13.5V Tj=25C On state; VIN=3.25V; 9V<VCC<18V RON IL(off1) IL(off2) IL(off3) IL(off4)
(#) Per device.

12 12 6

40 25 12 90 180

On state resistance Off State Output Current Off State Output Current Off State Output Current Off State Output Current

IOUT=1A; Tj=25C; 9V<VCC<18V IOUT=1A, Tj=150C; 9V<VCC<18V VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; VCC=13V; Tj =125C VIN=VOUT=0V; VCC=13V; Tj =25C 0 -75

50 0 5 3

SWITCHING (VCC=13V)
Symbol td(on) td(off) dVOUT/dt(on) Parameter Turn-on delay time Turn-off delay time Turn-on voltage slope Test Conditions RL=13 channels 1,2,3,4 RL=13 channels 1,2,3,4 RL=13 channels 1,2,3,4 RL=13 channels 1,2,3,4 Min Typ 30 30 See relative diagram See relative diagram Max Unit s s V/s

dVOUT/dt(off)

Turn-off voltage slope

V/s

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VNQ690SP

ELECTRICAL CHARACTERISTICS (continued) PROTECTIONS (per each channel)

Symbol TTSD TR Thyst ILIM Vdemag VSTAT ILSTAT CSTAT VSCL Parameter Shutdown temperature Reset temperature Thermal hysteresis DC Short circuit current Turn-off output voltage clamp Status low output voltage Status leakage current Status pin input capacitance Status clamp voltage Test Conditions Min 150 135 7 10 Typ 170 15 14 Max 200 25 20 20 VCC-41 VCC-48 VCC-55 0.5 10 25 6 6.8 -0.7 8 Unit C C C A A V V A pF V V

9V<VCC<36V 6V<VCC<36V IOUT=2A; VIN=0V; L=6mH ISTAT=1.6mA Normal operation; VSTAT=5V Normal operation; VSTAT=5V ISTAT=1mA ISTAT=-1mA

LOGIC INPUT (per each channel)

Symbol VIL VIH VHYST IIH IIL VICL Parameter Input Low Level Voltage Input High Level Voltage Input Hysteresis Voltage Input high level voltage Input Current Input Clamp Voltage Test Conditions Min 3.25 0.5 VIN=3.25V VIN=1.25V IIN=1mA IIN=-1mA 10 1 6 6.8 -0.7 8 Typ Max 1.25 Unit V V V A A V V

OPENLOAD DETECTION (off state) per each channel

Symbol tSDL VOL TDOL Parameter Status Delay Openload Voltage Detection Threshold Openload Detection Delay at Turn Off Test Conditions See Figure 1 (Openload detection reading must be performed after TDOL). VIN=0V VCC=18V (*) Min Typ Max 20 1.5 2.5 3.5 300 Unit s V s

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VNQ690SP

ELECTRICAL TRANSIENT REQUIREMENTS

ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 ISO T/R 7637/1 Test Pulse 1 2 3a 3b 4 5 Class C E I C C C C C C II C C C C C E III C C C C C E IV C C C C C E I -25 V +25 V -25 V +25 V -4 V II -50 V +50 V -50 V +50 V -5 V TEST LEVELS III IV -75 V +75 V -100 V +75 V -6 V -100 V +100 V -150 V +100 V -7 V Delays and Impedance 2 ms 10 0.2 ms 10 0.1 s 50 0.1 s 50 100 ms, 0.01

Test Levels Result

Contents All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure and cannot be returned to proper operation without replacing the device.

SWITCHING CHARACTERISTICS

VLOAD 90% 80%

dVOUT/dt (on)

dVOUT/dt(off)

10% t VIN

td(on)

tr

td(off)

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VNQ690SP
TRUTH TABLE (per each channel)
CONDITIONS Normal Operation Overtemperature Undervoltage Overvoltage Current Limitation Output Voltage > VOL INPUT L H L H L H L H L H L H OUTPUT L H L L L L L L L X H H STATUS H H H L X X H H H H L H

Figure 1: Status timing waveforms

OPENLOAD STATUS TIMING VIN

OVERTEMP STATUS TIMING

VIN

VSTAT tDOL tSDL

VSTAT tSDL tSDL

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VNQ690SP

Figure 2: Waveforms

NORMAL OPERATION INPUTn LOAD VOLTAGEn STATUS UNDERVOLTAGE VUSDhyst VUSD INPUTn LOAD VOLTAGEn STATUS undefined

VCC

OVERVOLTAGE VCC<VOV VCC INPUTn LOAD VOLTAGEn STATUS OPENLOAD with external pull-up INPUTn LOAD VOLTAGEn STATUS tDOL Tj INPUTn LOAD CURRENTn STATUS TTSD TR OVERTEMPERATURE tDOL VOL VCC>VOV

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VNQ690SP

APPLICATION SCHEMATIC

+5V

+5V

Rprot STATUS

VCC

Dld Rprot INPUT1 OUTPUT1 C

Rprot

INPUT2 OUTPUT2

Rprot INPUT3 Rprot INPUT4 GND OUTPUT4 OUTPUT3

RGND VGND

DGND

Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.

GND PROTECTION REVERSE BATTERY

NETWORK

AGAINST

Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / (IS(on)max). 2) RGND (VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the devices datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the

sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND. If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSD. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input threshold and the status output values if the microprocessor ground is not common with the device

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VNQ690SP

ground. This shift will not vary if more than one HSD shares the same diode/resistor network.

LOAD DUMP PROTECTION

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds VCC max DC rating. The same applies if the device will be subject to transients on the VCC line that are greater than the ones shown in the ISO T/R 7637/1 table.

C I/Os PROTECTION:
If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent the C I/Os pins to latch-up.

The value of these resistors is a compromise between the leakage current of C and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak/Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k.

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VNQ690SP

Off State Output Current

IL(off1) (A)
3.5 3.25 3 2.75 2.5 2.25 2 1.75 1.5 1.25 1 -50 -25 0 25 50 75 100 125 150 175

High Level Input Current

Iih (A)
5 4.5

Vcc=24V Vout=0V

Vin=3.25V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Input Clamp Voltage

Vicl (V)
8 7.75

Status Leakage Current

Ilstat (A)
0.05 0.045

Iin=1mA
7.5 7.25 7 6.75 6.5 6.25 6 -50 -25 0 25 50 75 100 125 150 175 0.04 0.035 0.03 0.025 0.02 0.015 0.01 -50 -25

Vstat=5V

25

50

75

100

125

150

175

Tc (C)

Tc (C)

Status Low Output Voltage

Vstat (V)
0.8 0.7

Status Clamp Voltage

Vscl (V)
7.4 7.3

Istat=1.6mA
0.6 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 175 7.2 7.1 7 6.9 6.8 6.7 6.6 -50

Istat=1mA

-25

25

50

75

100

125

150

175

Tc (C)

Tc (C)

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VNQ690SP

On State Resistance Vs Tcase

Ron (mOhm)
160 140 120 100

On State Resistance Vs VCC

Ron (mOhm)
160

Tc= 150C Iout=1A Vcc=9V; 18V & 36V

140

120

Iout=1A
100

80 80 60 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175 40

Tc= 25C Tc= -40C

20 0 5 10 15 20 25 30 35 40

Tc (C)

Vcc (V)

ILIM Vs Tcase
Ilim (A)
25 22.5

Input High Level

Vih (V)
4 3.75

Vcc=13V
20 17.5 15 12.5 10 7.5 5 -50 -25 0 25 50 75 100 125 150 175 3.5 3.25 3 2.75 2.5 2.25 2 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Input Low Level

Vil (V)
2.6 2.4 2.2 2

Input Hysteresis Voltage

Vihyst (V)
1.4 1.3 1.2 1.1 1

1.8 0.9 1.6 0.8 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 175 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

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VNQ690SP

Overvoltage Shutdown
Vov (V)
50 47.5 45

Openload Off State Voltage Detection Threshold

Vol (V)
5 4.5

Vin=0V
4 3.5

42.5 40 37.5 35

3 2.5 2 1.5 1

32.5 30 -50 -25 0 25 50 75 100 125 150 175

0.5 0 -50 -25 0 25 50 75 100 125 150 175

Tc (C)

Tc (C)

Turn-on Voltage Slope

dVout/dt(on) (V/ms)
500 450 400 350 300 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175

Turn-off Voltage Slope

dVout/dt(off) (V/ms)
600 550

Vcc=13V RI=13Ohm

500 450 400 350 300 250 200 150 100 -50

Vcc=13V RI=13Ohm

-25

25

50

75

100

125

150

175

Tc (C)

Tc (C)

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VNQ690SP

Maximum turn off current versus load inductance

ILMAX (A) 100

10
A B C

1 0.01 0.1 1 L(mH) 10 100

A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C Conditions: VCC=13.5V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization

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VNQ690SP

PowerSO-10 THERMAL DATA

PowerSO-10 PC Board

Layout condition of Rth and Zth measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm, Cu thickness=35m, Copper areas: from minimum pad lay-out to 8cm2).

Rthj-amb Vs PCB copper area in open box free air condition

RTHj_amb (C/W)

55
Tj-Tamb=50C

50 45 40 35 30
0 2 4 6 8 10
PCB Cu heatsink area (cm^2)

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VNQ690SP

Thermal Impedance Junction Ambient Single Pulse

ZT H (C/W) 1000

100
Footprint 6 cm2

10

0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000

Thermal fitting model of a quad HSD in PowerSO-16

Pulse calculation formula

Z TH = R TH + ZTHtp ( 1 )
where

Tj_1

C1

C2

C3

C4

C5

C6

= tp T
Footprint 0.18 0.8 0.7 0.8 13 37 0.0006 1.50E-03 1.75E-02 0.4 0.75 3 6

R1 Pd1 C13

R2

R3

R4

R5

R6

Thermal Parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 ( C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C)

Tj_2

C14

R13 Pd2

R14

R17

R18

Tj_3

C7

C8

C9

C10

C11

C12

22

R7 Pd3 C15

R8

R9

R10

R11

R12

Tj_4

C16

R15 Pd4

R16

T_amb

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VNQ690SP

PowerSO-10 MECHANICAL DATA

DIM. A A (*) A1 B B (*) C C (*) D D1 E E2 E2 (*) E4 E4 (*) e F F (*) H H (*) h L L (*) (*)
(*) Muar only POA P013P

mm. MIN. 3.35 3.4 0.00 0.40 0.37 0.35 0.23 9.40 7.40 9.30 7.20 7.30 5.90 5.90 1.27 1.25 1.20 13.80 13.85 0.50 1.20 0.80 0 2 1.80 1.10 8 8 0.047 0.031 0 2 1.35 1.40 14.40 14.35 0.049 0.047 0.543 0.545 TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 MIN. 0.132 0.134 0.000 0.016 0.014 0.013 0.009 0.370 0.291 0.366 0.283 0.287 0.232 0.232

inch TYP. MAX. 0.144 0.142 0.004 0.024 0.021 0.022 0.0126 0.378 0.300 0.374 300 0.295 0.240 0.248 0.050 0.053 0.055 0.567 0.565 0.002 0.070 0.043 8 8

0.10 A B

10

E2

E4

SEATING PLANE e
0.25

DETAIL "A"

C D = D1 = = = SEATING PLANE

A F A1

A1

L DETAIL "A"
P095A

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VNQ690SP
PowerSO-10 SUGGESTED PAD LAYOUT
14.6 - 14.9
B

TUBE SHIPMENT (no suffix)

CASABLANCA MUAR
C

10.8- 11 6.30

A A

0.67 - 0.73 1 2 3 4 5 10 9 8 7 6 1.27 0.54 - 0.6

9.5

All dimensions are in mm. Base [Link] Bulk [Link] Tube length ( 0.5) Casablanca Muar 50 50 1000 1000 532 532 A B C ( 0.1) 0.8 0.8

10.4 16.4 4.9 17.2

TAPE AND REEL SHIPMENT (suffix 13TR)

REEL DIMENSIONS
Base [Link] Bulk [Link] A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 600 600 330 1.5 13 20.2 24.4 60 30.4

All dimensions are in mm.

TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 24 4 24 1.5 1.5 11.5 6.5 2
End

All dimensions are in mm.

Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components

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VNQ690SP

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. [Link]

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