(PAPER SET II) (PAPER SET I)
IFTM UNIVERSITY, MORADABAD First Mid Examination Odd Semester (Session !" #"$)
IFTM UNIVERSITY, MORADABAD First Mid Examination Odd Semester (Session !" #"$)
B%Te&' (ME, (E, A), BT)
SUBJECT: Electronics Engineering CODE: EEC-101 M.M: 10 TIME: 1 Hr%
B%Te&' (ME, (E, A), BT)
SUBJECT: Electronics Engineering CODE: EEC-101 M.M: 10 TIME: 1 Hr%
Note* (1) Attempt any four questions. Each question carries equal marks.
+%" (a) What do you mean by biasing? (" mar,)
Note* (1) Attempt any four questions. Each question carries equal marks.
6.7 a! Explain the wor*ing of a p-n junction diode under i! forward bias ii! reverse bias 7 mar*! b! $efine the following terms with respect to diodes: i! 1rea*down voltage ii! 8nee voltage iii! .ea* inverse voltage 7.9 mar*!
(-) Explain with neat diagrams how the width of depletion layer of a p-n
junction changes with the applied forward and reverse bias.
+% (a) Classify
("%. mar,)
the following as conductor or semiconductor: ii! "ermanium iii! #ilver iv! #ilicon
(" mar,)
6.: a!. Write down the value of .&+ / efficiency of Centre 3apped ;ull wave rectifier b! Explain the wor*ing of ;ull wave rectifier with a neat circuit diagram and relevant input / output waveforms. 6.< a!. Explain 3ransition capacitance of a p-n junction. b! With a neat circuit diagram explain the wor*ing of a voltage multiplier.
i! "old
(-) $ifferentiate
#emiconductors% Conductors and &nsulators on the
("%. mar,)
basis of band gap.
+%$ (a)
Explain '(valanche) brea* down.
(" mar,)
(-) $raw
the +-& characteristics of ,ener diode and explain how does a
("%. mar,)
6.= a! $efine >% ? for a transistor. b! $erive the relation between >% ? for a transistor. 6.9 a! $raw the circuit of a transistor in the common-emitter configuration.
,ener regulate a voltage?
+%/ (a) $raw -.- / .-. transistors. 0abel all the currents and show the direction of flow also explain the three region of a 123. (" mar,) b! Explain with the help of a neat diagram the basic transistor action in case
b! 3he collector / base current of an -.- transistor are measured as &c@9m(% &1@9AB( / &C1C@7 B(% $etermine >% ? / &E.
of a npn transistor.
("%. mar,)
+%. (a) What is stability factor 4#5. (-) $erive the general expression for stability factor.
(" mar,) ("%. mar,)