AOD4186

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AOD4186 combines advanced trench MOSFET

technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for low
voltage inverter applications.

VDS (V) =40V

ID = 35A

(VGS = 10V)

RDS(ON) < 15m

(VGS = 10V)

RDS(ON) < 19m

(VGS = 4.5V)

- RoHS Compliant
- Halogen Free

100% UIS Tested!

100% R g Tested!

TO-252
D-PAK

Top View
D

Bottom View

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25C

Continuous Drain
Current G

Pulsed Drain Current C

V
A

70
10

IDSM

TA=70C

20
27

IDM

TA=25C

Continuous Drain
Current

Units
V

35

ID

TC=100C

Maximum
40

Avalanche Current C

IAR

24

Repetitive avalanche energy L=0.1mH C

EAR

29

mJ

TC=25C
Power Dissipation

TC=100C
TA=25C

Power Dissipation A

Junction and Storage Temperature Range

Alpha & Omega Semiconductor, Ltd.

2.5

1.6

TJ, TSTG

-55 to 175

Symbol
t 10s
Steady-State
Steady-State

25

PDSM

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case

50

PD

RJA
RJC

Typ
16.7
40
2.5

Max
25
50
3

Units
C/W
C/W
C/W

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AOD4186

Electrical Characteristics (T J=25C unless otherwise noted)

Parameter

Symbol

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage

Conditions

Min

ID=250A, VGS=0V
VDS=40V, VGS=0V

IGSS

Gate-Body leakage current

VDS=0V, VGS= 20V

VGS(th)
ID(ON)

Gate Threshold Voltage

VDS=VGS ID=250A

1.7

On state drain current

VGS=10V, VDS=5V

100

RDS(ON)

Static Drain-Source On-Resistance

TJ=55C

VGS=10V, ID=20A
TJ=125C
VGS=4.5V, ID=15A
Forward Transconductance

VSD

Diode Forward Voltage

IS=1A,VGS=0V
Maximum Body-Diode Continuous Current

VDS=5V, ID=20A

DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

Units
V

Zero Gate Voltage Drain Current

gFS

Max

40

IDSS

IS

Typ

VGS=0V, VDS=20V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=20V, ID=20A

2.2

100

nA

2.7

V
A

12.4

15

20

24

14.5

19

m
m

60
0.75

S
1

60

780

980

1200

pF

90

130

170

pF

48

80

110

pF

1.9

3.8

5.7

13.5

17

20

nC

11

nC

2.5

nC

2.7

4.5

6.3

nC

VGS=10V, VDS=20V, RL=1.0,

RGEN=3

ns

12

ns

26

ns

ns

trr

Body Diode Reverse Recovery Time

IF=20A, dI/dt=500A/s

12

15

Qrr

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s

24

31

38

ns
nC

A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power
dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ
=25C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.
Rev 1 : May-09
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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AOD4186

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80

80
6V

10V

VDS=5V

4.5V

60

60

ID(A)

ID (A)

4V
40

40
125C
20

20

25C

VGS=3.5V
0

0
0

20

Normalized On-Resistance

18
RDS(ON) (m)

VGS(Volts)
Figure 2: Transfer Characteristics (Note E)

VDS (Volts)
Fig 1: On-Region Characteristics (Note E)

VGS=4.5V

16
14

VGS=10V

12
10

1.8

VGS=10V
ID=20A

1.6

17
5
2
VGS=4.5V10

1.4
1.2

ID=15A

1
0.8

8
0

10

15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)

25

50

75

100

125

150

175

200

Temperature (C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)

40

1.0E+02
ID=20A

1.0E+01

35

25

IS (A)

RDS(ON) (m)

40

1.0E+00

30
125C

20

125C

1.0E-01
1.0E-02

25C

1.0E-03
25C

15

1.0E-04
1.0E-05

10
2

10

VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)

Alpha & Omega Semiconductor, Ltd.

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10

1500
VDS=20V
ID=20A

1200
Capacitance (pF)

VGS (Volts)

900

600
Coss

300

0
0

10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics

Ciss

20

Crss
0

10

20
30
VDS (Volts)
Figure 8: Capacitance Characteristics

40

200

100.0

10.0

10s

160

100s
DC

1ms
10ms

1.0

TJ(Max)=175C
TC=25C
0.1
0.01

0.1

120

17
TJ(Max)=175C
TC=25C 5

80

2
10

40

1
VDS (Volts)

10

100

10
D=Ton/T
TJ,PK=TC+PDM.ZJC.RJC

0
0.0001

0.001

0.01

0.1

10

Pulse Width (s)

18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

ZJC Normalized Transient

Thermal Resistance

Power (W)

ID (Amps)

10s
RDS(ON)
limited

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

40

RJC=3C/W
1

PD

0.1
Single Pulse

Ton
0.01
0.00001

0.0001

0.001

0.01

0.1

10

100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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AOD4186

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100

Power Dissipation (W)

IAR(A) Peak Avalanche Current

60

TA=25C

TA=100C
TA=150C

50
40
30
20
10

TA=125C
0

10
0.000001

0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)

25

50

75

100

150

175

10000

60

TA=25C

50

1000
40

Power (W)

Current rating ID(A)

125

TCASE (C)
Figure 13: Power De-rating (Note F)

30

17
5
2
10

100

20

10
10

1
0.00001

0
0

25

50

75

100

125

150

175

TCASE (C)
Figure 14: Current De-rating (Note F)

ZJA Normalized Transient

Thermal Resistance

10

0.1

10

1000

Pulse Width (s)

18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
1

0.001

40

RJA=50C/W

0.1
Single Pulse

PD

0.01

Ton
0.001
0.00001

0.0001

0.001

0.01

0.1

10

100

1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

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AOD4186

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V

+ Vds

VDC

Qgs

Qgd

VDC

DUT
Vgs
Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds
Vds

Vgs

90%

+ Vdd

DUT

VDC

Rg

10%

Vgs

Vgs

t d(on)

tr

t d(off)

t on

tf
t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L

E AR= 1/2 LIAR

Vds

BVDSS

Vds

Id

+ Vdd

Vgs

Vgs

I AR

VDC

Rg

Id

DUT
Vgs

Vgs

Diode Recovery Test Circuit & Waveforms

Q rr = - Idt

Vds +
DUT
Vgs

Vds Isd

Isd

Vgs
Ig

Alpha & Omega Semiconductor, Ltd.

+ Vdd

t rr

dI/dt
I RM
Vdd

VDC

IF

Vds

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