SFH 608
PHOTOTRANSISTOR, 5.3 KV, TRIOS
LOW CURRENT
OPTOCOUPLER
FEATURES
Dimensions in inches (mm)
Very High CTR at IF=1 mA, VCE=0.5 V
- SFH608-2, 63-125% Pin One ID
3 2 1
- SFH608-3, 100-200% Anode 1 6 Base
- SFH608-4, 160-320% .248 (6.30)
- SFH608-5, 250-500% .256 (6.50) Cathode 2 5 Collector
Specified Minimum CTR at IF=0.5 mA,
VCE=1.5 V: 32% (typ. 120%) 4 5 6 NC 3 4 Emitter
Good CTR Linearity with Forward Current .335 (8.50)
Low CTR Degradation .343 (8.70)
High Collector-Emitter Voltage VCEO=55 V .300 (7.62)
.039 typ.
Isolation Test Voltage: 5300 VACRMS (1.00)
Min.
Low Current Input .130 (3.30)
.150 (3.81)
Low Coupling Capacitance
4 18 typ.
High Common Mode Transient Immunity typ. .110 (2.79)
Phototransistor Optocoupler in 6 Pin DIP .020 (.051) min. .150 (3.81)
.010 (.25)
Package .031 (0.80) .014 (.35)
.018 (0.45) .035 (0.90)
Field Effect Stable: TRIOS* .022 (0.55) .300 (7.62)
V
D E VDE 0884 Available with Option 1 .100 (2.54) typ. .347 (8.82)
Underwriters Lab File #E52744
Applications
Maximum Ratings (TA=25C)
- Telecommunications
- Industrial Controls Emitter
- Office Machines Reverse Voltage ...................................................................................6 V
- Microprocessor System Interfaces DC Forward Current ........................................................................50 mA
Surge Forward Current (tp10 s) ................................................... 2.5 A
DESCRIPTION Total Power Dissipation ................................................................. 70 mW
The SFH 608 is an optocoupler designed for high Detector
current transfer ratio at low input currents with the Collector-Emitter Voltage .................................................................. 55 V
output transistor saturated. This makes the device Collector-Base Voltage .......................................................................55 V
ideal for low current switching applications. The Emitter-Base Voltage ..........................................................................7 V
SFH608 is packaged in a six pin plastic DIP. Collector Current ............................................................................ 50 mA
*TRIOSTRansparent IOn Shield Surge Collector Current (tp1 ms) ................................................100 mA
Total Power Dissipation ............................................................... 150 mW
Isolation Test Voltage (between emitter and detector, refer
to climate DIN 40046 part 2 Nov. 74) (t=1 sec.).............. 5300 VACRMS
Creepage ................................................................................................. 7 mm
Clearance................................................................................................. 7 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part1 ................................................... 175
Isolation Resistance
VIO=500 V, TA=25C ......................................................................... 1012
VIO=500 V, TA=100C .......................................................................1011
Storage Temperature Range .......................................... -55C to +150C
Operating Temperature Range....................................... -55C to +100C
Junction Temperature......................................................................100C
Soldering Temperature (max. 10 sec., dip soldering:
distance to seating plane1.5 mm) .............................................260C
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Characteristics (TA=25C, unless otherwise specified) Figure 2. Switching times TA=25C,
Symbol Typ Unit Condition
IF=1 mA, VCC=5 V, tON, tR, tOFF, tF, =f(RL)
Emitter
Forward Voltage VF 1.1 ( 1.5) V IF=5 mA
Reverse Voltage VR ( 6) V IR= 10 A
Reverse Current IR 0.01 ( 10) A VR=6 V
Capacitance CO 25 pF VR=0 V, f=1 MHz
Thermal Resistance RthJA 1070 K/W
Detector
Voltage, Collector-Emitter VCEO 55 V ICE=10 A
Voltage, Emitter-Base VBEO 7 V IEB=10 A
Capacitance CCE 10 pF VCE=5 V, f=1 MHz
Capacitance CCB 16 pF VCE=5 V, f=1 MHz
Capacitance CEB 10 pF VCE=5 V, f=1 MHz
Thermal Resistance RthJA 500 K/W
Figure 3. Current transfer ratio (typ.)
Package VCE=0.5 V, CTR=f(TA, IF)
Coupling Capacitance CC 0.60 pF
Coupling Transfer Ratio
SFH 608-2 IC/IF 63-125 % IF=1 mA, VCE=0.5 V
75 ( 32) % IF=0.5 mA, VCE=1.5 V
SFH 608-3 IC/IF 100-200 % IF=1 mA, VCE=0.5 V
120 ( 50) % IF=0.5 mA, VCE=1.5 V
SFH 608-4 IC/IF 160-320 % IF=1 mA, VCE=0.5 V
200 ( 80) % IF=0.5 mA, VCE=1.5 V
SFH 608-5 IC/IF 250-500 % IF=1 mA, VCE=0.5 V
300 ( 125) % IF=0.5 mA, VCE=1.5 V
Saturation Voltage,
Collector-Emitter
SFH 608-2 VCEsat 0.25 ( 0.4) V IC=0.32 mA, IF=1 mA
SFH 608-3 VCEsat 0.25 ( 0.4) V IC= 0.5 mA, IF=1 mA
SFH 608-4 VCEsat 0.25 ( 0.4) V IC= 0.8 mA, IF=1 mA
SFH 608-5 VCEsat 0.25 ( 0.4) V IC=1.25 mA, IF=1 mA
Leakage Current,
Collector-Emitter ICEO 10 ( 200) nA VCE=10 V
Figure 1. Schematic Figure 4. Current transfer ratio (typ.)
VCE=1.5 V, CTR=f(TA, IF)
IF RL
VCC
IC
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IC=2 mA (to adjust by IF), RL=100 , TA=25C, VCC=5 V
Description Symbol Values Unit
Turn-On Time tON 8 s
Rise Time tR 5 s
Turn-Off Time tOFF 7.5 s
Fall Time tF 7 s
SFH608
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Figure 5. Diode forward voltage (typ.) Figure 8. Output characteristics Figure 11. Transistor capacitance
TA=25C, VF=f(IF) (typ.) TA=25C, ICE=f(VCE, IF) (typ.) TA=25C, f=1 MHz, CCE=f(VCE)
CCB=f (VCB), CEB=f (VEB)
Figure 6. Diode forward voltage (typ.) Figure 9. Permissible forward current Figure 12. Collector-emitter leakage
IF =1 mA, VF=f(TA) diode IF=f(TA) current IF=0, VCE=10 V, ICEO=f(TA)
Figure 7. Output characteristics (typ.) Figure 10. Permissible power dissi-
TA=25C, ICE=f(VCE, IB) pation PTOT=f(TA)
SFH608
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