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Product
S T U312D
S amHop Microelectronics C orp. Oct 08 2008

Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

P R ODUC T S UMMAR Y (N-C hannel) P R ODUC T S UMMAR Y (P -C hannel)

V DS S ID R DS (ON) ( m ) Max V DS S ID R DS (ON) ( m ) Max

24 @ V G S = 10V 34 @ V G S = -10V
30V 18A -30V -14A
36 @ V G S = 4.5V 54 @ V G S = -4.5V

D1 D2
D1/D2

G1 G2

S1
G1
S2 N-ch P -ch
G2 TO-252-4L S1 S2

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)

P arameter S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage V DS 30 -30 V
Gate-S ource Voltage V GS 24 24 V
25 C 18 -14 A
Drain C urrent-C ontinuous @ Tc ID
70 C 15 -12 A
a
-P ulsed IDM 50 -50 A

Drain-S ource Diode Forward C urrent IS 10 -6 A

Tc= 25 C 11
Maximum P ower Dissipation PD W
Tc= 70 C 7.7
Operating Junction and S torage
T J , T S TG -55 to 175 C
Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-C ase R JC 13.6 C /W

Thermal R esistance, Junction-to-Ambient R JA 120 C /W

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S T U312D
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)

Parameter S ymbol Condition Min Typ C Max Unit

OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 30 V
Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 uA
Gate-Body Leakage IGS S V GS = 24V, V DS = 0V 10 uA
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1 1.8 3 V
V GS =10V, ID = 10A 18 24 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =4.5V, ID= 8A 24 36 m ohm

On-S tate Drain Current ID(ON) V DS = 5V, V GS = 4.5V 20 A

Forward Transconductance gFS V DS = 10V, ID= 10A 15 S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance C IS S 640 PF
V DS =15V, V GS = 0V
Output Capacitance C OS S 180 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 110 PF

Gate resistance Rg V GS =0V, V DS = 0V, f=1.0MH Z 0.5 ohm

b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = 15V 13 ns
R ise Time tr ID = 1 A 12 ns
V GS = 10V
Turn-Off Delay Time tD(OFF) R GE N = 6 ohm 40 ns
Fall Time tf 7 ns
Total Gate Charge Qg V DS =15V, ID =20A,V GS =10V 13 nC
V DS =15V, ID =20A,V GS =4.5V 6.8 nC
Gate-S ource Charge Q gs V DS =15V, ID = 20 A 1.5 nC
Gate-Drain Charge Q gd V GS =10V 3.5 nC
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 S T U312D
P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)

Parameter S ymbol Condition Min Typ C Max Unit

5 OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA -30 V
Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 uA
Gate-Body Leakage IGS S V GS = 24V, V DS = 0V 10 uA
ON CHAR ACTE R IS TICS a
Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1 -1.7 -3 V
V GS =-10V, ID= -6A 27 34 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =-4.5V, ID= -4A 39 54 m ohm

On-S tate Drain Current ID(ON) V DS = -5V, V GS = -10V -20 A

Forward Transconductance gFS V DS = -10V, ID = -6A 10 S
DYNAMIC CHAR ACTE R IS TICS b
Input Capacitance C IS S 800 PF
V DS =-15V, V GS = 0V
Output Capacitance C OS S 215 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 120 PF

Gate resistance Rg V GS =0V, V DS = 0V, f=1.0MH Z 4 ohm

b
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = -15V 12 ns
R ise Time tr ID = -1A 18 ns
V GS = -10V
Turn-Off Delay Time tD(OFF) R GE N = 6 ohm 68 ns
Fall Time tf 38 ns
Total Gate Charge Qg V DS =-15V,ID =-20A,V GS =-10V 15 nC
V DS =-15V,ID =-20A,V GS =-4.5V 7 nC
Gate-S ource Charge Q gs V DS =-15V, ID = -20 A 1.3 nC
Gate-Drain Charge Q gd V GS =-10V 5 nC
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S T U312D
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
C
Parameter Symbol Condition Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS b
VGS = 0V, Is =10A N-Ch 0.9 1.3
Diode Forward Voltage VSD VGS = 0V, Is =-6A P-Ch -0.9 -1.3 V
Notes
a.Pulse Test:Pulse Width300s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
N-Channel

48 20
V G S =4.5V
40
16
ID , Drain C urrent(A)

V G S =8V
I D , Drain C urrent (A)

32 -55 C
V G S =10V 12
V G S =3.5V T j=125 C
24

8
16 25 C
V G S =3V
8 4

0 0
0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8

V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

30 1.5
R DS (ON) , On-R es is tance

25 V G S =4.5V 1.4
V G S =10V
R DS (on) (m )

Normalized

20 1.3 I D =10A

15 1.2
V G S =10V
10 1.1

5 1.0 V G S =4.5V
I D =8A

0 0.0
1 6 12 18 24 30 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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 S T U312D

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.2 1.20
I D =250uA
1.1 V DS =V G S
1.15
I D =250uA

B V DS S , Normalized
V th, Normalized

1.0 1.10
0.9
1.05
0.8
1.00
0.7
0.95
6 0.6
0.5 0.90
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

60 20.0
I D =10A
50 125 C
Is , S ource-drain current (A)

10.0
R DS (on) (m )

40
125 C
30
75 C 25 C
20
75 C
25 C
10

0 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4

V G S , G ate- S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

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 S T U312D
900 10

V G S , G ate to S ource V oltage (V )

V DS =15V
750
C is s 8 I D =20A
C , C apacitance (pF )

600
6
450
4
300
C os s
6 150
2
C rs s
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 10. C apacitance F igure 11. G ate C harge

300 100
80
S witching T ime (ns )

I D , Drain C urrent (A)

100 T D(off)
60 Tr T D(on)
it
Tf
) L im 1m
s
( ON 10
10 10 R DS 10 ms
0m
1s s
DC

V DS =15V ,ID=1A V G S =10V

1 1 S ingle P ulse
V G S =10V
T c=25 C
0.5
1 6 10 60 100 300 600 0.1 1 10 30 60
R g, G ate R es is tance ( ) V DS , Drain-S ource V oltage (V )

F igure 12.s witching characteris tics F igure 13. Maximum S afe

O perating Area

1
T ransient T hermal Impedance

D=0.5
r(t),Normalized E ffective

0.2
0.1
P DM
0.1
0.05
t1
0.02 t2
0.01 1. R J A (t)=r (t) * R J A
2. R J A =S ee Datas heet
S ING LE P ULS E 3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

S quare Wave P uls e Duration (s ec)

F igure 14. Normalized T hermal T rans ient Impedance C urve

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S T U312D
P-C hannel

30 20
V G S =-10V V G S =-4.5V -55 C
24 V G S =-4V 16
-I D , Drain C urrent(A)

-I D , Drain C urrent (A)

V G S =-3.5V
18 12

12 8
V G S =-3V T j=125 C

6 4 25 C
V G S =-2.5V

0 0
0 0.5 1 1.5 2 2.5 3 0 0.7 1.4 2.1 2.8 3.5 4.2

-V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

60 1.5
R DS (ON) , On-R es is tance

50 1.4
V G S =-10V
D
V G S =-4.5V I =-6A
R DS (on) (m )

Normalized

40 1.3

30 1.2

20 V G S =-10V 1.1
V G S =-4.5V
10 1.0 I D =-4A

0 0.0
1 6 12 18 24 30 0 25 50 75 100 125 150
T j( C )
-I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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 S T U312D

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.3 1.15
I D =-250uA
1.2 V DS =V G S
1.10
I D =-250uA

B V DS S , Normalized
V th, Normalized

1.1 1.05
1.0
1.00
0.9
0.95
0.8
0.90
6 0.7
0.6 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

120 20.0
I D =-6A
100
-Is , S ource-drain current (A)

10.0
R DS (on) (m )

80
125 C
60
75 C 25 C
40
75 C
25 C
20
125 C

0 1.0
0 2 4 6 8 10 0.4 0.6 0.8 1.0 1.2 1.4

-V G S , G ate- S ource Voltage (V ) -V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

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 S T U312D
1200 10

-V G S , G ate to S ource V oltage (V )

V DS =-15V
1000
C is s 8 I D =-6A
C , C apacitance (pF )

800
6
600
4
400
C os s
6 200
2
C rs s
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16
-V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 10. C apacitance F igure 11. G ate C harge

300 70
Tr
50
S witching T ime (ns )

-I D , Drain C urrent (A)

100 T D(off)
t
im i

60 T D(on)
)L
(O N

Tf 10
ms
S
RD

10 10 10
0
1 s ms
DC

V DS =15V ,ID=1A 1 V G S =-10V

1 V G S =10V S ingle P ulse
T c=25 C
0.03
1 6 10 60 100 300 600 0.1 1 10 30 60
R g, G ate R es is tance ( ) -V DS , Drain-S ource V oltage (V )
F igure 12.s witching characteris tics F igure 13. Maximum S afe
O perating Area

1
T ransient T hermal Impedance

D=0.5
r(t),Normalized E ffective

0.2
0.1
P DM
0.1
0.05
t1
t2
0.02

0.01 1. R J A (t)=r (t) * R J A

2. R J A =S ee Datas heet
S ING LE P ULS E 3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

S quare Wave P uls e Duration (s ec)

F igure 14. Normalized T hermal T rans ient Impedance C urve

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S T U312D
P A C K A G E OUT L INE DIME NS IONS

TO-252-4L

A
B

H
K
C
M

J L

S P G

Millimeters
REF .
MIN MAX
A 6.40 6.80
B 5.2 5.50
C 6.80 10.20
D 2.20 3.00
P 1.27 REF.
S 0.50 0.80
G 0.40 0.60
H 2.20 2.40
J 0.45 0.60
K 0 0.15
L 0.90 1.50
M 5.40 5.80

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STU312D
TO-252-4L Tape and Reel Data
TO-252-4L Carrier Tape

TO-252-4L Reel

UNIT:

11