AO4892

100V Dual N-Channel MOSFET

General Description Product Summary

The AO4892 uses trench MOSFET technology that is VDS 100V

uniquely optimized to provide the most efficient high ID (at VGS=10V) 4A
frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) < 68mΩ
switching power losses are minimized due to an
RDS(ON) (at VGS=4.5V) < 94mΩ
extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
100% UIS Tested
100% Rg Tested

SOIC-8
D1 D2
Top View Bottom View Top View

S1 1 8 D1

G1 2 7 D1

S2 3 6 D2
G1 G2
G2 4 5 D2
S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 4
ID
Current TA=70°C 3 A
Pulsed Drain Current C IDM 25
Avalanche Current C IAS 4 A
Avalanche energy L=0.1mH C EAS 0.8 mJ
TA=25°C 2.0
PD W
Power Dissipation B TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

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 AO4892

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V
VDS=100V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.7 2.35 2.8 V
ID(ON) On state drain current VGS=10V, VDS=5V 25 A
VGS=10V, ID=4A 56 68
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 104 126
VGS=4.5V, ID=3A 74 94 mΩ
gFS Forward Transconductance VDS=5V, ID=4A 12.5 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.78 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 415 pF
Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz 32 pF
Crss Reverse Transfer Capacitance 3 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 6.5 12 nC
Qg(4.5V) Total Gate Charge 3 6 nC
VGS=10V, VDS=50V, ID=4A
Qgs Gate Source Charge 1.5 nC
Qgd Gate Drain Charge 1.5 nC
tD(on) Turn-On DelayTime 4 ns
tr Turn-On Rise Time VGS=10V, VDS=50V, RL=12.5Ω, 2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 15 ns
tf Turn-Off Fall Time 2 ns
trr Body Diode Reverse Recovery Time IF=4A, dI/dt=500A/µs 16 ns
Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=500A/µs 44 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4892

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20
10V 6V VDS=5V

20 4.5V
15

15
ID (A)

ID(A)
10
10
3.5V
5 125°C
5
VGS=3.0V 25°C
0 0
0 1 2 3 4 5 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

100 2.2

Normalized On-Resistance 2
90
VGS=10V
VGS=4.5V ID=4A
1.8
80
Ω)
RDS(ON) (mΩ

1.6 17
70
5
1.4
2
60
1.2 VGS=4.5V 10
ID=3A
50 VGS=10V 1

40 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

180 1.0E+02
ID=4A
160 1.0E+01
140 40
1.0E+00
120
Ω)
RDS(ON) (mΩ

1.0E-01 125°C
IS (A)

100
125°C 1.0E-02
80 25°C
1.0E-03
60
25°C 1.0E-04
40

20 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4892

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 500
VDS=50V
ID=4A
8 400
Ciss

Capacitance (pF)
VGS (Volts)

6 300

4 200
Coss

2 100
Crss

0 0
0 2 4 6 8 0 20 40 60 80 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 100.0
IAR (A) Peak Avalanche Current

10µs
10.0
RDS(ON) 100µs
ID (Amps)

TA=25°C limited
10 1.0
1ms
10ms
TA=125°C
0.1
TJ(Max)=150°C
TA=25°C 10s
0.0
DC
1
0.01 0.1 1 10 100 1000
1 10 100
VDS (Volts)
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability Figure 10: Maximum Forward Biased
(Note C) Safe Operating Area (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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 AO4892

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=90°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4892

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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