Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DF

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - 30 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
VCEsat Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - 5.0 V
ICsat Collector saturation current 8.0 - A
ts Storage time ICsat = 8.0 A; IB(end) = 1.1 A 3.0 4.0 µs

PINNING - SOT199 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
c
case
1 base
2 collector
b
3 emitter Rbe

case isolated
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 12 A
ICM Collector current peak value - 30 A
IB Base current (DC) - 8 A
IBM Base current peak value - 12 A
-IB(AV) Reverse base current average over any 20 ms period - 200 mA
-IBM Reverse base current peak value 1 - 9 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W

1 Turn-off current.

September 1997 1 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DF

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 6.0 V; IC = 0 A 72 110 218 mA
Reb Base-emitter resistance VEB = 6.0 V - 55 - Ω
BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
VCEOsust Collector-emitter sustaining voltage IB=0A ;Ic = 100mA 800 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 5.0 V
VBEsat Base-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 1.1 V
hFE DC current gain IC = 1 A; VCE = 5 V - 11 -
hFE IC = 8 A; VCE = 5 V 5 7 9.5
VF Diode forward voltage IF = 8 A - 1.6 2.0 V

DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (32 kHz line ICsat = 8.0 A; LC = 260 µH; Cfb = 13 nF;
deflection circuit) IB(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;
(-dIB/dt = 1.6 A/µs)
ts Turn-off storage time 3.0 4.0 µs
tf Turn-off fall time 0.2 0.35 µs
Vfr Anti-parallel diode forward recovery IF = 8 A; dIF/dt = 50 A/µs 16 - V
voltage
tfr Anti-parallel diode forward recovery VF = 5 V 410 - ns
time

2 Measured with half sine-wave voltage (curve tracer).

September 1997 2 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DF

ICsat + 150 v nominal

TRANSISTOR
adjust for ICsat
IC DIODE

Lc
IB IBend

10us 13us D.U.T.

IBend LB
Cfb
32us

VCE -VBB Rbe

Fig.1. Switching times waveforms. Fig.4. Switching times test circuit.

ICsat hFE BU2525DF

90 % 100

Tj = 25 C
IC 5V Tj = 125 C

10 %
tf 10
t
ts 1V
IB
IBend

1
0.1 1 10 100
- IBM IC / A

Fig.2. Switching times definitions. Fig.5. Typical DC current gain. hFE = f (IC)
parameter VCE

I I VBESAT / V BU2525AF
F F 1.2
Tj = 25 C
1.1
Tj = 125 C
1

10% 0.9
time
t fr 0.8
V 0.7 IC/IB=
F
3
0.6
V 4
5V fr 0.5 5
V
F 0.4
0.1 1 10
time IC / A
Fig.3. Definition of anti-parallel diode Vfr and tfr Fig.6. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB

September 1997 3 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DF

VCESAT / V BU2525AF Eoff / uJ BU2525AF

1 1000
IC/IB = IC = 8 A
0.9
5
0.8
4
0.7
3 7A
0.6
0.5 100
Tj = 25 C
0.4 Tj = 125 C
0.3
0.2
0.1
0 10
0.1 1 10 100 0.1 1 10
IC / A IB / A
Fig.7. Typical collector-emitter saturation voltage. Fig.10. Typical turn-off losses. Tj = 85˚C
VCEsat = f (IC); parameter IC/IB Eoff = f (IB); parameter IC; f = 32 kHz

VBESAT / V BU2525AF ts, tf / us BU2525AF

1.2 12
Tj = 25 C 11
32 kHz
1.1 Tj = 125 C 10
9
1 8
ts
7
0.9 6
IC= 5
0.8 4
8A IC =
3
6A 8A
0.7 2
5A 7A
1 tf
4A
0.6 0
0 1 2 3 4 0.1 1 10
IB / A IB / A
Fig.8. Typical base-emitter saturation voltage. Fig.11. Typical collector storage and fall time.
VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz

PD% Normalised Power Derating

VCESAT / V BU2525AF 120
10 with heatsink compound
Tj = 25 C 110
Tj = 125 C 100
90
80
70
8A
1 60
6A 50
40
5A
30
IC = 4 A 20
10
0.1 0
0.1 1 10 0 20 40 60 80 100 120 140
IB / A Ths / C
Fig.9. Typical collector-emitter saturation voltage. Fig.12. Normalised power dissipation.
VCEsat = f (IB); parameter IC PD% = 100⋅PD/PD 25˚C = f (Ths)

September 1997 4 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DF

Zth / (K/W) BU2525AF

10 IC / A BU2525AF
100

1
0.5 tp =
0.2 ICM = 0.01
0.1 40 us
0.05
0.1
0.02 ICDC

PD tp tp 10
0.01 D=
T

100 us
D=0 t
T
0.001
1E-06 1E-04 1E-02 1E+00
t/s
Fig.13. Transient thermal impedance. Ptot
Zth j-hs = f(t); parameter D = tp/T 1

1 ms

0.1
10 ms

DC

0.01
1 10 100 1000 VCE / V
Fig.14. Forward bias safe operating area. Ths = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.

September 1997 5 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DF

MECHANICAL DATA

Dimensions in mm
15.3 max 5.2 max
Net Mass: 5.5 g
0.7 3.1
7.3 3.3 3.2

o
6.2 45
5.8

21.5
max
seating
plane

3.5 max
3.5 not tinned

15.7
min

1 2 3
2.1 max 1.2 0.7 max
1.0
0.4 M 2.0
5.45 5.45

Fig.15. SOT199; The seating plane is electrically isolated from all terminals.

Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997 6 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DF

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997 7 Rev 1.200

This datasheet has been download from:

[Link]

Datasheets for electronics components.