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RN1441, RN1442, RN1443, RN1444: Muting and Switching Applications

The document summarizes four Toshiba transistor models - RN1441, RN1442, RN1443, and RN1444. The transistors are silicon NPN epitaxial types for muting and switching applications. They offer high emitter-base voltage, high reverse hFE, and low on resistance. The document provides maximum ratings, equivalent circuit diagrams, and electrical characteristics for each transistor model.

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Rubens Araujo
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118 views4 pages

RN1441, RN1442, RN1443, RN1444: Muting and Switching Applications

The document summarizes four Toshiba transistor models - RN1441, RN1442, RN1443, and RN1444. The transistors are silicon NPN epitaxial types for muting and switching applications. They offer high emitter-base voltage, high reverse hFE, and low on resistance. The document provides maximum ratings, equivalent circuit diagrams, and electrical characteristics for each transistor model.

Uploaded by

Rubens Araujo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

RN1441~RN1444

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1441,RN1442,RN1443,RN1444
Muting And Switching Applications
Unit in mm
l High emitter-base voltage: VEBO = 25V (min)
l High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA)
l Low on resistance: RON = 1Ω (typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process

Equivalent Circuit

JEDEC TO-236MOD
EIAJ SC-59
TOSHIBA 2-3F1A
Weight: 0.012g

Maximum Ratings (Ta = 25°°C) Marking

Characteristic Symbol Rating Unit HFE classification


Type No.
A B
Collector-base voltage VCBO 50 V
RN1441 KA KB
Collector-emitter voltage VCEO 20 V
RN1442 LA LB
Emitter-base voltage VEBO 25 V
RN1443 NA NB
Collector current IC 300 mA
RN1444 CA CB
Collector power dissipation PC 200 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55~150 °C

1 2001-06-07
RN1441~RN1444

Electrical Characteristics (Ta = 25°°C)


Test
Characteristic Symbol Test Condition Min Typ. Max Unit
Circuit
Collector cut-off current ICBO ― VCB = 50V, IE = 0 ― ― 0.1 µA
Emitter cut-off current IEBO ― VEB = 25V, IC = 0 ― ― 0.1 µA
DC current gain hFE (Note) ― VCE = 2V, IC = 4mA 200 ― 1200
Collector-emitter saturation voltage VCE (sat) ― IC = 30mA, IB = 3mA ― ― 0.1 V
Transition frequency fT ― VCE = 6V, IC = 4mA ― 30 ― MHz
Collector output capacitance Cob ― VCB = 10V, IE = 0, f = 1MHz ― 4.8 ― pF
RN1441 3.9 5.6 7.3

RN1442 7 10 13
Input resistor R1 ― ― kΩ
RN1443 15.4 22 28.6

RN1444 1.54 2.2 2.86

Note : hFE classification A: 200~700 B: 350~1200

2 2001-06-07
RN1441~RN1444

3 2001-06-07
RN1441~RN1444

4 2001-06-07

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