INDUSTRIAL ELECTRONICS
Experiment No. 5
GTO, VDR and DIAC OPERATION
Course: EE 340 Section: EE31S2
Group No.: 2 Date Performed: 09/10/2022
Group Members: Date Submitted: 09/13/2022
Bumatay, Charles Patrick Instructor: Ms. Marjorie Villanueva
Bunga, Dexter
Cruz, Vince Allen
Hamtig, Richard Ahmir
Santos, Timothy Brian
Villanueva, Darwin
1. Objective(s):
To determine the manner of operation and characteristics of the GTO, a VDR and a DIAC
2. Intended Learning Outcomes (ILOs):
The students shall be able to:
1. Analyze the characteristic and operation of a GTO, VDR and DIAC
2. Examine the trigger and breakover control capabilities of a DIAC
3. Evaluate the effectiveness of thyristor circuits
3. Discussion:
The GTO thyristor (Gate Turn Off thyristor) is a semiconductor device that operates ad a switch (on-off)
through a signal that is sent to its gate. Like a conventional thyristor, the GTO can be activated through a positive
signal (between gate and cathode), input to the gate. The DIAC is a bi-directional diode that has been specifically
designed to pilot an SCR or a TRIAC. The DIAC does not conduct, except for a small current named leakage
current, until the break over voltage is reached at its ends (from 20 to 40 volts approximately).
The VDR (Voltage Dependent Resistor) finds applications in many sectors, for the protection of: low
voltage electronic circuits (computers, portable devices or sensors), AC supply systems, apparatuses for
telecommunications, electronic circuits that are used in motor vehicles and industrial products in general
(a) GTO Schematic Symbol (b) DIAC Schematic Symbol (c) VDR Schematic
4. Equipment:
De Lorenzo 3155E22
Oscilloscope Probes
Digital Multimeter
Connecting Wires
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5. Procedure:
General Guideline
Always turn on the base frame first before turning on the DL Student Navigator 2 Software. Turn off the
software after performing one activity and turn it on before performing a new activity to reset the software
and hardware communication.
Activity 1 – GTO Operations with Resistive Load
Schematic Diagram
Figure 5.1
1. Refer to figure 5.2
Figure 5.2
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2. Connect through 2 leads the resistance RL1 (RL1 = 150 Ohm) of the LOAD block to terminals 2
and 3
3. Connect a probe of the oscilloscope to terminal 3 (anode of the GTO)
4. Measure the voltage levels of the gate when the GTO is conducting (GTO DRIVER ON) and
when the GTO is interdicted (GTO DRIVER OFF). Remember that the junction between gate
and cathode is similar to a diode. It is interesting to notice how the gate current is not
proportional to the anode current as it is normally the case in the bipolar transistors
5. Measure the voltage levels of the anode of the GTO when the GTO is conducting (GTO DRIVER
ON) and when the GTO is interdicted (GTO DRIVER OFF). It is interesting to notice how the
anode voltage is not linked to the gate current or to the value of the resistance of the load (as it
would be for the bipolar transistors)
Activity 2 – VDR and DIAC Operations
Schematic Diagram
Figure 5.3
With VDR
1. Refer to figure 5.4
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Figure 5.4
2. Connect the multimeter (connected for measurements of direct voltages) between terminal 1 and
the earth.
3. By operating on the trimmer P1, take the voltage of terminal 1 to the value 0 V.
4. Measure the voltage at the ends of the resistance R2 and write its value in table 5.1.
Table 5.1
Measured values Calculated values
V terminal 1 VR2 (R2=10kW) VVDR RVDR
[VDC] [V] [V] [kW]
0
2
4
5
6
7
8
9
10
5. Calculate the voltage at the ends of the VDR and write its value in table 5.1
6. Calculate the value of the resistance of the VDR for this voltage value at its ends. Remember
that in this case the ratio R1/Rvdr is equal to the ratio VR1/VRvdr, where we have indicated with
R1 the value of the resistance R1, with Rvdr the value of the resistance of the VDR, with VR1
the voltage at the ends of R1 and with VRvdr the voltage at the ends of the VDR
7. Repeat this type of measurements for all the voltage values that are listed in the table.
With DIAC
1. Refer to figure 5.4
2. Connect the multimeter (connected for measurements of direct voltages) between terminal 1 and
the earth.
3. By operating on the trimmer P1, take the voltage of terminal 1 to the value 0 V.
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4. Measure the voltage at the ends of the resistance R3 and write its value in table 5.2.
Table 5.2
Measured values Calculated values
V terminal 1 VR3 (R3=10kW) VDIAC
[VDC] [V] [V]
0
1
2
3
4
5
6
7
8
9
10
5. Calculate the voltage at the ends of the DIAC and write its value in table 5.2.
Pay attention to the fact that the DIAC is connected to a voltage of –30Vdc
6. Repeat this type of measurements for all the voltage values that are listed in the table.
6. Observation:
The Gate Turnoff Thyristor (GTO) shares many characteristics with a typical thyristor. One PNP or NPN
transistor is connected in a regenerative arrangement, and the system initially operates in this mode
after being turned on.
7. Interpretation:
The value of the cathode when the GTO driver is on is 0.85 V, which is lower than the value of the anode
when the GTO driver is off, which is 14.69 V. 14.76 V is the same for both the anode and the cathode.
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8. Conclusion:
The GTO driver is shut off when it falls below the anode. The values of the anode and cathode are
same. The Gate Turnoff Thyristor (GTO) has many properties in common with a typical thyristor. One
PNP or NPN transistor connected in a regenerative configuration can be used to conceptualize this, with
the system initially remaining in this condition after being turned on.
9. Assessment (Rubric for Laboratory Performance):
10. Assessment Task:
1. Compare the Diac, VDR and GTO in terms of their operation.
- The DIAC is capable of operating in both directions. As a result, the DIAC's symbol seems
to resemble a transistor. The triac's current flow can move in both directions because it is bi-
directional. A gate signal implementation could turn a GTO off.
2. Cite an application of a Diac including its schematic diagram and explain the network behavior.
- Diverse applications, including speed control step control circuits, light dimmers, heat
controls, and many more control circuits, have made use of DIACs as a trigger device.
Here’s the example of heat control circuit.
3. Sketch the current waveform for the circuit in Figure below. The diac has a break over potential
of 20 V. IH = 20 mA.
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