DSEI2x101-12A
FRED VRRM = 1200 V
I FAV = 2x 99 A
t rr = 40 ns
Fast Recovery Epitaxial Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSEI2x101-12A
Backside: isolated
2 1
3 4
Features / Advantages: Applications: Package: SOT-227B (minibloc)
● Planar passivated chips ● Antiparallel diode for high frequency ● Isolation Voltage: 3000 V~
● Low leakage current switching devices ● Industry standard outline
● Very short recovery time ● Antisaturation diode ● RoHS compliant
● Improved thermal behaviour ● Snubber diode ● Epoxy meets UL 94V-0
● Very low Irm-values ● Free wheeling diode ● Base plate: Copper
● Very soft recovery behaviour ● Rectifiers in switch mode power internally DCB isolated
● Avalanche voltage rated for reliable operation supplies (SMPS) ● Advanced power cycling
● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS)
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a
© 2013 IXYS all rights reserved
DSEI2x101-12A
Fast Diode Ratings
Symbol Definition Conditions min. typ. max. Unit
VRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 1200 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1200 V
IR reverse current, drain current VR = 1200 V TVJ = 25°C 3 mA
VR = 960 V TVJ = 125°C 15 mA
VF forward voltage drop I F = 100 A TVJ = 25°C 1.87 V
I F = 200 A 2.13 V
I F = 100 A TVJ = 150 °C 1.61 V
I F = 200 A 1.92 V
I FAV average forward current TC = 50 °C T VJ = 150 °C 99 A
rectangular d = 0.5
VF0 threshold voltage TVJ = 150 °C 1.01 V
for power loss calculation only
rF slope resistance 6.1 mΩ
R thJC thermal resistance junction to case 0.5 K/W
R thCH thermal resistance case to heatsink 0.10 K/W
Ptot total power dissipation TC = 25°C 250 W
I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C 900 A
CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 107 pF
I RM max. reverse recovery current TVJ = 25 °C 38 A
I F = 100 A; VR = 600 V TVJ = 100 °C 52 A
t rr reverse recovery time -di F /dt = 600 A/µs TVJ = 25 °C 150 ns
TVJ = 100 °C 255 ns
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a
© 2013 IXYS all rights reserved
DSEI2x101-12A
Package SOT-227B (minibloc) Ratings
Symbol Definition Conditions min. typ. max. Unit
I RMS RMS current per terminal 150 A
TVJ virtual junction temperature -40 150 °C
T op operation temperature -40 125 °C
Tstg storage temperature -40 150 °C
Weight 30 g
MD mounting torque 1.1 1.5 Nm
MT terminal torque 1.1 1.5 Nm
d Spp/App terminal to terminal 10.5 3.2 mm
creepage distance on surface | striking distance through air
d Spb/Apb terminal to backside 8.6 6.8 mm
VISOL isolation voltage t = 1 second 3000 V
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute 2500 V
Product Marking
Part
Number
Logo XXXXX ®
UL
yywwZ 1234
Date
Code
Location Lot#
Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No.
Standard DSEI2x101-12A DSEI2x101-12A Tube 10 468002
Equivalent Circuits for Simulation * on die level T VJ = 150 °C
I V0 R0 Fast
Diode
V 0 max threshold voltage 1.01 V
R0 max slope resistance * 4.9 mΩ
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a
© 2013 IXYS all rights reserved
DSEI2x101-12A
Outlines SOT-227B (minibloc)
2 1
3 4
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a
© 2013 IXYS all rights reserved
DSEI2x101-12A
Fast Diode
150 16 140
TVJ = 100°C
14 VR = 600 V 120
125
IF = 200 A
12
100 100 A
100 IF = 200 A 50 A
10
100 A IRM 80
IF Qr
75 8 50 A
TVJ = 150°C [A] 60
[A] [µC] 6
50
40
100°C 4
25 TVJ = 100°C
2 20
VR = 600 V
25°C
0 0 0
0.0 0.5 1.0 1.5 2.0 100 1000 0 200 400 600 800 1000
VF [V] -diF /dt [A/µs] -diF /dt [A/µs]
Fig. 1 Forward current Fig. 2 Typ. reverse recov. charge Fig. 3 Typ. peak reverse current
IF versus VF Qrr versus -diF /dt Irr versus -diF /dt
1.4 500 60 1.5
TVJ = 100°C TVJ = 100°C
VR = 600 V VR = 600 V
450 50
1.2
400 40 1.0
1.0 VFR
trr IF = 200 A
tfr
Kf 350 100 A 30
50 A [µs]
0.8 [V]
[ns]
IRM 300 20 0.5
0.6
Qrr 250 10
VFR tfr
0.4 200 0 0.0
0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000
TVJ [°C] -diF /dt [A/µs] -diF /dt [A/µs]
Fig. 4 Dyn. parameters Fig. 5 Typ. recovery time Fig. 6 Typ. peak forward voltage
Qr, IRM versus TVJ trr versus -diF /dt VFR and tfr versus diF /dt
D=0.7
Constants for ZthJC calculation:
ZthJC 0.5
0.3 i Rthi ti
[K/W]
0.2 [K/W] [s]
0.1 1 0.020 0.00002
0.1 0.05 2 0.050 0.00081
3 0.076 0.01000
Single Pulse
4 0.240 0.09400
0.05 5 0.114 0.45000
0.001 0.01 0.1 1 10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130703a
© 2013 IXYS all rights reserved
