MTC500 MTA500 MTK500 MTX500 MT500

Thyristor Modules

Features：
VDSM,VRSM VDRM,VRRM Type & Outline
n Isolated mounting base 3000V~
n Pressure contact technology with
900V 800V MTx500-08-416F3
Increased power cycling capability
1100V 1000V MTx500-10-416F3
n Space and weight saving
1300V 1200V MTx500-12-416F3
Typical Applications MTx500-14-416F3
1500V 1400V
n AC/DC Motor drives
1700V 1600V MTx500-16-416F3
n Various rectifiers
1900V 1800V MTx500-18-416F3
n DC supply for PWM inverter

VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(°C) UNIT
Min Type Max

180° half sine wave 50Hz

IT(AV) Mean on-state current 125 500 A
Single side cooled,Tc=85°C

IT(RMS) RMS on-state current 125 785 A

IDRM at VDRM
Repetitive peak current 125 35 mA
IRRM at VRRM

ITSM Surge on-state current 10ms half sine wave 14.5 KA

125
2 2 VR=60%VRRM
It I T for fusing coordination 1051 A s*103
2

VTO Threshold voltage 0.80 V

125
rT On-state slop resistance 0.34 mΩ

VTM Peak on-state voltage ITM=1600A 25 1.54 V

dv/dt Critical rate of rise of off-state voltage V DM=67%VDRM 125 1000 V/μs

Gate source 1.5A

di/dt Critical rate of rise of on-state current 125 200 A/μs
tr ≤0.5μs Repetitive

IGT Gate trigger current 30 200 mA

VGT Gate trigger voltage VA=12V, IA=1A 25 1.0 3.0 V

IH Holding current 20 200 mA

VGD Non-trigger gate voltage VDM=67%VDRM 125 0.2 V

Thermal resistance
Rth(j-c) Single side cooled per chip 0.065 °C /W
Junction to case
Thermal resistance
Rth(c-h) Single side cooled per chip 0.024 °C /W
case to heatsink
Viso Isolation voltage 50Hz,R.M.S,t=1min,I iso:1mA(MAX) 3000 V

Thermal connection torque(M10) 12.0 N·m

Fm
Mounting torque(M6) 6.0 N·m

Tstg Stored temperature -40 125 °C

Wt Weight 1430 g

Outline 416F3

[Link] Page 1 of 3 2013-07

 MTC500 MTA500 MTK500 MTX500 MT500
Peak On-state Voltage [Link] On-state Current
MTC500 Max. junction To case 0.065
Thermai Impedance [Link]
3.6 0.07

Transient thermal impedance,°C/W

3.2 0.06
TJ=125°C
Iinstantaneous on-state voltage,volts

2.8 0.05

2.4 0.04

2 0.03

1.6 0.02

1.2 0.01

0.8 0
100 1000 10000 0.001 0.01 0.1 1 10
Instantaneous on-state currant,amperes
time,S

Fig.1 Fig.2

MTC500
Max. Power Dissipation [Link] On-state Current Max. case TemperatureMTC500
[Link] On-state Current
800 140
180
Max on-state dissipation,watts

120 120
0 180 0 180
Case temperature,°C

600
90 100 Conduction Angle
Conduction Angle
60
80
400
30
60

40
200

20
30 60 90 120 180
0 0
0 100 200 300 400 500 600 0 200 400 600 800 1000
Mean on-state current,amperes Mean on-state current,amperes

Fig.3 Fig.4

Max. Power Dissipation

[Link] On-state Current Max. case Temperature [Link] On-state Current
MTC500
700 140
DC
360 360
600 270 120
Max on-state dissipation,watts

Case temperature,°C

500 180 100

Conduction Angle Conduction Angle
120
400 90 80
60
300 30 60

200 40

100 20
30 60 90 120 180 270 DC
0 0
0 80 160 240 320 400 480 560 640 0 500 1000 1500
Mean on-state current,amperes Mean on-state current,amperes

Fig.5 Fig.6
[Link] Page 2 of 3 2013-07
 MTC500 MTA500 MTK500 MTX500 MT500
Surge Current
14.5 [Link] I214.5
t [Link]
/1051
1100
16
1000
Total peak half-sine surge current,kA

14

Maximum 2It(Kamps2,secs)
900
12
800
10
700
8
600

6 500

4 400

2 300
1 10 100 1 10
Cycles at 50Hz Time,[Link]

Fig.7 Fig.8

Gate characteristic at 25°C junction temperature Gate Trigger Zone at varies temperature
3 V,200MA
18 4.5
-30°C
16 4
-10°C
14 P GM =120W 3.5 25°C
Gate voltage,VGT ，V

Gate voltage,VGT ，V

max (100μs pulse)

12 3
125°C
10 2.5
8 2
6 min. 1.5
4 1
P G 2W
2 0.5
0 0
0 4 8 12 16 20 0 50 100 150 200 250 300 350
Gate current,IGT ，A Gate current,IGT ，mA

Fig.9 Fig.10

Outline:
6-G2
7-K2
5-G1
4-K1

3
1 2

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