Electronic Devices and Circuit Theory

Boylestad

Chapter 5
Ch.5 Summary

BJT Transistor Modeling

A model is an equivalent circuit that represents
the AC characteristics of the transistor.
A model uses circuit elements that approximate
the behavior of the transistor.
There are two models commonly used in small
signal AC analysis of a transistor:
re model
Hybrid equivalent model
Ch.5 Summary

The re Transistor Model

BJTs are basically current-controlled devices; therefore

the re model uses a diode and a current source to
duplicate the behavior of the transistor.

One disadvantage to this model is its sensitivity to the

DC level. This model is designed for specific circuit
conditions.
Ch.5 Summary

Common-Base Configuration
Input impedance:

26 mV
re  Zi  re
Ie
Ch.5 Summary

Common-Base Configuration
The input is applied to the emitter

The output is taken from the

collector

Low input impedance.

High output impedance

Current gain less than unity

Very high voltage gain

No phase shift between input

and output
Ch.5 Summary

Calculations
Input impedance:
Zi  RE || re

Output impedance:
Zo  RC

Voltage gain:
Vo RC RC
Av   
Vi re re

Current gain:
Io
Ai     1
Ii
Ch.5 Summary

Common-Emitter Fixed-Bias
Configuration
The input is applied to the base
The output is taken from the
collector
High input impedance
Low output impedance
High voltage and current gain
Phase shift between input and
output is 180
Ch.5 Summary

Common-Emitter
Fixed-Bias
Configuration
AC equivalent

re,model
Ch.5 Summary

Common-Emitter
Fixed-Bias
Calculations
Zi  RB||β| e
Input
impedance: Zi  βre RE 10 βre

Zo  RC||rO
Output
impedance: Zo  RC ro 10 RC

Vo (R ||r )
Av   C o
Vi re
Voltage gain: RC
Av   ro 10 RC
re
Ch.5 Summary

Common-Emitter Voltage-Divider Bias

re model requires you to

determine , re, and ro.
Ch.5 Summary

Common-Emitter
Voltage-Divider Bias
Calculations
Input impedance Output impedance
R   R1 || R2 Zo  RC || ro
Zi  R  || βre Zo  RC ro 10RC

Voltage gain
Vo  RC || ro
Av  
Vi re
Vo R
Av   C ro 10RC
Vi re
Ch.5 Summary

Common-Emitter Emitter-Bias
Configuration
Ch.5 Summary

Impedance Calculations
Input impedance:

Zi  RB || Zb
Zb  re  (   1)RE
Zb  (re  RE )
Zb  RE

Output impedance:
Zo  RC
Ch.5 Summary

Gain Calculations
Voltage gain:
Vo R
Av   C
Vi Zb
Vo RC
Av   Z b (r e  RE )
Vi re  RE
Vo R
Av   C Z b   RE
Vi RE
Ch.5 Summary

Emitter-Follower Configuration

This is also known as the common-collector configuration.

The input is applied to the base and the output is taken from the emitter.
There is no phase shift between input and output.
Ch.5 Summary

Impedance
Calculations
Input impedance:

Zi  RB ||Z b
Zb  βre  (β  1)RE
Zb  β(re  RE )
Zb  βRE

Zo  RE||re
Output impedance: Zo  re RE re
Ch.5 Summary

Gain Calculations
Voltage gain:
Vo RE
Av  
Vi RE  re
Vo
Av  1 RE re , RE  re  RE
Vi
Ch.5 Summary

The Hybrid  Model

The hybrid pi model is most useful for analysis

of high-frequency transistor applications.
At lower frequencies the hybrid pi model closely
approximate the re parameters, and can be
replaced by them.
Ch.5 Summary
The Hybrid Equivalent Model
Hybrid parameters are developed and used for modeling the transistor. These
parameters can be found on a transistor’s specification sheet:

hi = input resistance
hr = reverse transfer voltage ratio (Vi /Vo)  0
hf = forward transfer current ratio (Io /Ii)
ho = output conductance
Ch.5 Summary

Simplified General h-Parameter Model

hi = input resistance
hf = forward transfer current ratio (Io/Ii)
Ch.5 Summary

re vs. h-Parameter Model

Common-Emitter

hie  βre
hfe  βac

Common-Base

hib  re
hfb  α  1
Ch.5 Summary

Fixed-Bias

Input impedance:
Zi  RB || hie

Output impedance:
Zo  RC || 1/ hoe

Voltage gain:
Vo h R || 1/ ho e  Io
Av    fe C Ai   hfe
Vi hie Current gain: Ii
Ch.5 Summary

Voltage-Divider Configuration
Input impedance:
Zi  R || hie

Output impedance:
Zo  RC

Voltage gain:
hfe RC || 1/hoe 
Av  
hie

hfeR 
Current gain: Ai  
R   hie
Ch.5 Summary

Emitter-Follower Configuration
Input impedance:
Zb  hfeRE Z b  h feR E
Z i  R o || Z b
Zi  Ro || Zb

Output impedance:
hie
Zo  RE ||
hfe

Voltage gain: hfe RB

Ai 
Vo RE RB  Z b
Av   Current gain:
Vi RE  hie / hfe Zi
Ai   Av
RE
Ch.5 Summary

Common-Base Configuration
Input impedance:
Zi  RE || hib
Output impedance:
Zo  RC

Voltage gain:
Vo h R
Av    fb C
Vi hib

Current gain:
Io
Ai   hfb  1
Ii