c-Si passivated cobtact solar cell with optimized

efficiency of 23.50% in AM1.5G environment

Vikram Choudhary Sourav Maheswary Chelloju Krishnachaitanya Manish Verma*, IEEE Member

Department of Electronics and Department of Electronics and Department of Electronics and Department of Electronics and
Communication Engineering, SRM Communication Engineering, SRM Communication Engineering, SRM Communication Engineering, SRM
Institute of Science and Technology, Institute of Science and Technology, Institute of Science and Technology, Institute of Science and Technology,
Kattankulathur, Chennai, Tamil Kattankulathur, Chennai, Tamil Kattankulathur, Chennai, Tamil Kattankulathur, Chennai, Tamil
Nadu– 603203, India Nadu– 603203, India Nadu– 603203, India Nadu– 603203, India

vc1678@[Link] sm9724@[Link] cl6638@[Link] * [Link]@[Link]

Abstract—This work focuses on the crystalline silicon based single applications [9,10,11]. Due to its reduced capture cross sections
junction solar cell performance analysis. The passivation layer is for minority carriers, n-type silicon is also included in these solar
used to provide high open circuit voltage at the rear side. But, the cell architectures with a number of benefits, including better
change in doping concentration of the window layer affects the tolerance to metal contaminants such interstitial iron [12,13,14].
photo carrier generation and carrier collection at the rear side. The long-term stability of solar cells is further ensured by the
decreasing the doping concentration of the window layer also fact that n-type silicon reduces problems caused by boron-
decreases the open circuit voltage. The maximum efficiency of oxygen-related deterioration. Silicon is a flexible material used
23.30% is achieved for the single junction c-Silicon solar cell. The
in solar technology because of its straightforward processing
standard AM1.5G environment is used to illuminate the solar cell
method that is compatible with high-temperature procedures like
in 1-Sun intensity.
diffusion.
Keywords— crystalline, Silicon, passivation, doping, open circuit Implementing rear-side full-area metal connections
voltage. passivated by tunnel oxide is one possible strategy for improving
the performance of Si solar cells. This technique allows for one-
I. INTRODUCTION
dimensional current transmission and significantly lowers metal
For years, silicon-based passivated solar cells have been at contact recombination. Amorphous (or polycrystalline) Si-based
the forefront of photovoltaic technology thanks to its efficient layer deposition, high-temperature annealing, and the formation
manufacturing methods, low cost, and easy access to silicon as of an interfacial oxide layer are the three steps in the construction
a raw material. In order to reduce recombination losses and of Tunnel Oxide Passivating Contact (TOPCon) solar cells [15–
improve charge carrier collection, passivating connections were 21]. These developments in photovoltaics highlight the ongoing
developed for these cells, which has significantly improved work to push Si solar cells' efficiency limits. Also, the QWs are
performance. In this regard, we investigate a unique method of of high interest in improving the photon absorption [22]. In
inserting high-k dielectric materials into the architectures of response to the rising demand for clean and renewable energy
silicon-based passivated solar cells to further improve their sources, researchers are advancing the development of effective
efficiency. and sustainable solar cell technologies by integrating III-V/Si
The pursuit of improved silicon (Si) solar cell efficiencies dual-junction cells, optimizing material selections, and
has been the main objective of photovoltaic research. Si solar investigating cutting-edge passivating contact technologies like
cells with a bandgap energy of 1.12 eV have performed TOPCon [23-27].
admirably, however the principle of detailed balance requires In this paper, the extensive study of crystalline silicon solar
that their efficiency be limited to 29.8% [1,2]. Researchers have cell is done via TCAD simulation for the performance parameter
investigated novel strategies to get over this restriction, like the analysis. The window layer doping and wafer base doping is
integration of III-V/Si dual-junction solar cells, which have an varied and the optimum efficiency is obtained in AM1.5G
outstanding efficiency of 45% under one-Sun light [3]. environment using SILVACO ATLA TCAD simulator.
Particularly because of its greater open-circuit voltage (Voc), Si
coupled with GaAsP has outperformed combinations II. DEVICE STRUCTURE AND MODELING
incorporating GaP [3,4,5]. Tandem GaAsP/Si solar cells have
A. Structure of the single junction c-Si solar cell
exhibited efficiencies of 23.8% and 25.0% [6,7,8], with the top
cell having a 1.7 eV bandgap.
The purpose of the ARC layer is to minimize the reflection of
There has been much discussion on the difficulty of light from the solar cell, thereby increasing the absorption of
integrating asymmetrically spaced lattice III-V/Si dual-junction light. Comprising a thin layer of p-type silicon with impurities,
solar cell components, with buffer layers being essential for the emitter layer is responsible for generating a positive charge.
lowering threading displacement (TD) in two-terminal Conversely, the base layer, which is thicker, contains impurities
that create a negative charge and is made of n-type silicon. actively flowing through the cell. The bandgap energy
Furthermore, the top contact layer, also a thin layer of p-type essentially establishes the minimum voltage required to
silicon, serves the function of collecting the electrons produced stimulate the movement of electrons from the valence band to
by the solar cell. Lastly, the metal contact facilitates the the conduction band. Once the electrons transition into the
collection and transmission of electrons from the top contact conduction band, they are capable of traversing through the cell
layer to an external circuit. The solar cell operates by capturing and generating electricity. The graph illustrates that the voltage
sunlight and converting it into electrical energy. Upon contact of a solar cell experiences an increase as the thickness of the
with the solar cell, sunlight energizes the electrons present in cell increases. However, it is important to note that this increase
the emitter layer. The Figure1. Shows the device structure of c- in voltage is not linear and reaches a plateau at a specific
Si single junction solar cell having 200µm wafer thickness, thickness. The reason behind this phenomenon lies in the
300nm thick window layer and 25nm thick rear passivation limitations imposed by the bandgap energy of the
layer. conductor is placed at top and bottom as electrode contact semiconductor material utilized in the cell. The bandgap energy
to measure the current and voltages. refers to the disparity in energy levels between the valence band
and the conduction band of the semiconductor material. The
valence band serves as a reservoir of energy levels where
electrons reside when they are not in motion within the cell. On
the other hand, the conduction band consists of energy levels
that electrons occupy when they are actively flowing through
the cell. The bandgap energy essentially establishes the
minimum voltage required to stimulate the movement of
electrons from the valence band to the conduction band. Once
the electrons transition into the conduction band, they are
capable of traversing through the cell and generating electricity.

B. Optical and electrical properties of the cell

The Figure 3. indicates that the voltage of a solar cell increases

as the cell thickness increases, but the voltage increase is not
linear and plateaus at a certain cell thickness. This is because
Fig.1 Device structure the voltage increase is constrained by the bandgap energy of the
semiconductor material utilizes in the cell. The bandgap energy
is the energy difference between the valence band and the
conduction band of the semiconductor material. The valence
band is the band of energy levels that the electrons occupy when
they are not flowing through the cell. The conduction band is
the band of energy levels that the electrons occupy when they
are flowing through the cell. The bandgap determines the
minimum voltage that is essential to excite the electrons from
the valence band to the conduction band. Once the electrons are
in the conduction band, they can flow through the cell and
generate electricity.

Fig.2 Quantum Meshing Structure

The Figure 2. illustrates that the voltage of a solar cell

experiences an increase as the thickness of the cell increases.
However, it is important to note that this increase in voltage is
not linear and reaches a plateau at a specific thickness. The
reason behind this phenomenon lies in the limitations imposed
by the bandgap energy of the semiconductor material utilized
in the cell. The bandgap energy refers to the disparity in energy
levels between the valence band and the conduction band of the
semiconductor material. The valence band serves as a reservoir
of energy levels where electrons reside when they are not in
motion within the cell. On the other hand, the conduction band
consists of energy levels that electrons occupy when they are Fig. 3 Graph between Bandgap Energy and Cell Thickness
 B. Current voltage characteristics and power output
characteristics
The Figure 6. Shows the current voltage characteristics of the
c-Silicon single junction solar cell. It is observed that for the
minimum doping of 2.6 × 1015 /cm3 in the window layer, the
open circuit voltage (Voc) is 508.766mV. Increasing the doping
concentration by one decayed upto 2.6 × 1020 /cm3, the Voc
continues to increase and maximum Voc of 803.337mV is
achieved. Also, the maximum current density (Jsc) of
39.973mA/cm2 is obtained for minimum doping concentration
of 2.6 × 1015 /cm3. By increasing the doping concentration by
one decayed, the Jsc reduces and minimum Jsc of 35.958mA/cm2
is obtained for maximum doping in the window layer.

Figure 4. Spectral response Vs Optical wavelength

The Figure 4. shows the correlation between the voltage applied

and the photocurrent of a solar cell made of silicon. The
photocurrent exhibits a linear growth as the applied voltage rises
until it reaches the open-circuit voltage (Voc). At this point, the
photocurrent reaches its maximum value, which is commonly
referred to as the maximum power point (MPP). Beyond the
Voc, the photocurrent experiences a decline as the applied
voltage continues to increase. This is due to the fact that the
applied voltage induces the solar cell to operate in the reverse
bias region. Additionally, the photocurrent is more pronounced
when exposed to shorter wavelengths of light. This phenomenon
can be attributed to the higher absorption coefficient of silicon
at shorter wavelengths of light.
Figure 6. Current-Voltage characteristics of the cell
III. RESULTS AND DISCUSSIONS
Table 1 Performance parameter of the cell with the change in window
A. Optical operation and current density layer doping
The operation of the solar cell can be understood with the help Window layer Jsc Voc FF Effi. Pmax
of Figure 5. It shows that upon the irradiation of the solar doping (Na) (mA/cm2) (mV) (%) (%) (𝟏𝟎−𝟏𝟎 𝑾)
spectrum over the cell surface, sufficient amount of the
𝟐. 𝟔 × 𝟏𝟎𝟐𝟎 35.958 803.337 85.16 23.505 2.46
photogeneration occurs. These creates the electron hole pair
𝟏𝟗
and the momentum gained by the electron provides the large 𝟐. 𝟔 × 𝟏𝟎 36.706 758.229 86.01 22.872 2.39
amount of conduction current density. 𝟐. 𝟔 × 𝟏𝟎𝟏𝟖 36.817 720.391 85.25 21.606 2.26
𝟐. 𝟔 × 𝟏𝟎𝟏𝟕 37.324 655.611 84.40 19.734 2.06
𝟐. 𝟔 × 𝟏𝟎𝟏𝟔 39.024 592.299 79.59 17.577 1.83
𝟏𝟓
𝟐. 𝟔 × 𝟏𝟎 39.973 508.766 81.66 15.869 1.66

Fig.5 Optical Intensity, Photogeneration and Conduction current density Fig.7 Maximum power delivery curve
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