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Lds 0102 - Rev3 1593859

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0% found this document useful (0 votes)
28 views10 pages

Lds 0102 - Rev3 1593859

Uploaded by

payeshertebat
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2N7224, 2N7225, 2N7227 and 2N7228

Qualified Levels:
Compliant
N-CHANNEL MOSFET JAN, JANTX, and
Qualified per MIL-PRF-19500/592 JANTXV

DESCRIPTION
This family of switching transistors is military qualified up to the JANTXV level for high-
reliability applications. These devices are also available in a low profile U surface mount
package. Microsemi also offers numerous other transistor products to meet higher and lower
power ratings with various switching speed requirements in both through-hole and surface-
mount packages.
TO-254AA Package
Important: For the latest information, visit our website [Link]
FEATURES
• JEDEC registered 2N7224, 2N7225, 2N7227 and 2N7228 number series.
Also available in:
• JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/592.
(See part nomenclature for all available options.) U (SMD-1 or
TO-267AB) package
• RoHS compliant by design. (surface mount)
2N7224U & 2N7228U
APPLICATIONS / BENEFITS
• Low-profile design.
• Military and other high-reliability applications.

MAXIMUM RATINGS @ TA = +25ºC unless otherwise stated

Parameters / Test Conditions Symbol Value Unit


Operating & Storage Junction Temperature Range TJ & Tstg -55 to +150 °C
o
Thermal Resistance Junction-to-Case RӨJC 0.83 C/W
Total Power Dissipation @ TA = +25 °C 4
(1) PT W
@ TC = +25 °C 150
Gate-Source Voltage, dc VGS ± 20 V
(2)
Drain Current, dc @ TC = +25 ºC 2N7224 34.0
2N7225 27.4
ID1 A
2N7227 14.0
2N7228 12.0
(2)
Drain Current, dc @ TC = +100 ºC 2N7224 21
2N7225 17
ID2 A
2N7227 9
2N7228 8
(3)
Off-State Current (Peak Total Value) 2N7224 136 MSC – Lawrence
2N7225 110 6 Lake Street,
IDM A (pk) Lawrence, MA 01841
2N7227 56
2N7228 48 Tel: 1-800-446-1158 or
(978) 620-2600
Source Current 2N7224 34.0
Fax: (978) 689-0803
2N7225 27.4
IS A
2N7227 14.0 MSC – Ireland
2N7228 12.0 Gort Road Business Park,
NOTES: 1. Derated linearly by 1.2 W/ºC for TC > +25 ºC. Ennis, Co. Clare, Ireland
2. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal Tel: +353 (0) 65 6840044
wires and may also be limited by pin diameter: Fax: +353 (0) 65 6822298

Website:
[Link]
3. IDM = 4 x ID1 as calculated in note 2.

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 1 of 9


2N7224, 2N7225, 2N7227 and 2N7228

MECHANICAL and PACKAGING


• CASE: Ceramic and gold over nickel plated steel.
• TERMINALS: Gold over nickel plated tungsten/copper.
• MARKING: Part number, date code, and polarity symbol.
• WEIGHT: 6.5 grams.
• See Package Dimensions on last page.

PART NOMENCLATURE

JAN 2N7224

Reliability Level JEDEC type number


JAN = JAN Level (see Electrical Characteristics
JANTX = JANTX Level table)
JANTXV = JANTXV Level
Blank = Commercial

SYMBOLS & DEFINITIONS


Symbol Definition
di/dt Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
IF Forward current
RG Gate drive impedance
VDD Drain supply voltage
VDS Drain source voltage, dc
VGS Gate source voltage, dc

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 2 of 9


2N7224, 2N7225, 2N7227 and 2N7228

ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted

Parameters / Test Conditions Symbol Min. Max. Unit


OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
2N7224 100
2N7225 200
VGS = 0 V, ID = 1.0 mA V(BR)DSS V
2N7227 400
2N7228 500
Gate-Source Voltage (Threshold)
VDS ≥ VGS, ID = 0.25 mA VGS(th)1 2.0 4.0 V
VDS ≥ VGS, ID = 0.25 mA, TJ = +125°C VGS(th)2 1.0
VDS ≥ VGS, ID = 0.25 mA, TJ = -55°C VGS(th)3 5.0
Gate Current
VGS = ± 20 V, VDS = 0 V IGSS1 ±100 nA
VGS = ± 20 V, VDS = 0 V, TJ = +125°C IGSS2 ±200
Drain Current
VGS = 0 V, VDS = 80 V 2N7224
VGS = 0 V, VDS = 160 V 2N7225
IDSS1 25 µA
VGS = 0 V, VDS = 320 V 2N7227
VGS = 0 V, VDS = 400 V 2N7228
Drain Current
VGS = 0 V, VDS = 80 V, TJ = +125 °C 2N7224
VGS = 0 V, VDS = 160 V, TJ = +125 °C 2N7225
IDSS2 0.25 mA
VGS = 0 V, VDS = 320 V, TJ = +125 °C 2N7227
VGS = 0 V, VDS = 400 V, TJ = +125 °C 2N7228
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 21.0 A pulsed 2N7224 0.070
VGS = 10 V, ID = 17.0 A pulsed 2N7225 0.100
rDS(on)1 Ω
VGS = 10 V, ID = 9.0 A pulsed 2N7227 0.315
VGS = 10 V, ID = 8.0 A pulsed 2N7228 0.415
Static Drain-Source On-State Resistance
VGS = 10 V, ID = 34.0 A pulsed 2N7224 0.081
VGS = 10 V, ID = 27.4 A pulsed 2N7225 0.105
rDS(on)2 Ω
VGS = 10 V, ID = 14.0 A pulsed 2N7227 0.415
VGS = 10 V, ID = 12.0 A pulsed 2N7228 0.515
Static Drain-Source On-State Resistance
TJ = +125°C
VGS = 10 V, ID = 21.0 A pulsed 2N7224 0.11
VGS = 10 V, ID = 17.0 A pulsed 2N7225 rDS(on)3 0.17 Ω
VGS = 10 V, ID = 9.0 A pulsed 2N7227 0.68
VGS = 10 V, ID = 8.0 A pulsed 2N7228 0.90
Diode Forward Voltage
VGS = 0 V, ID = 34.0 A pulsed 2N7224 1.8
VGS = 0 V, ID = 27.4 A pulsed 2N7225 1.9
VSD V
VGS = 0 V, ID = 14.0 A pulsed 2N7227 1.7
VGS = 0 V, ID = 12.0 A pulsed 2N7228 1.7

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 3 of 9


2N7224, 2N7225, 2N7227 and 2N7228

ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)

DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V 2N7224 125
VGS = 10 V, ID = 27.4 A, VDS = 50 V 2N7225 115
Qg(on) nC
VGS = 10 V, ID = 14.0 A, VDS = 50 V 2N7227 110
VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7228 120
Gate to Source Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V 2N7224 22
VGS = 10 V, ID = 27.4 A, VDS = 50 V 2N7225 22
Qgs nC
VGS = 10 V, ID = 14.0 A, VDS = 50 V 2N7227 18
VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7228 19
Gate to Drain Charge
VGS = 10 V, ID = 34.0 A, VDS = 50 V 2N7224 65
VGS = 10 V, ID = 27.4 A, VDS = 50 V 2N7225 60
Qgd nC
VGS = 10 V, ID = 14.0 A, VDS = 50 V 2N7227 65
VGS = 10 V, ID = 12.0 A, VDS = 50 V 2N7228 70

SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-on delay time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V 2N7224
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V 2N7225
td(on) 35 ns
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V 2N7227
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V 2N7228
Rinse time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V 2N7224
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V 2N7225
tr 190 ns
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V 2N7227
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V 2N7228
Turn-off delay time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V 2N7224
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V 2N7225
td(off) 170 ns
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V 2N7227
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V 2N7228
Fall time
ID = 34.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V 2N7224
ID = 27.4 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V 2N7225
tf 130 ns
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V 2N7227
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V 2N7228
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 34.0 A 2N7224 500
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 27.4 A 2N7225 950
trr ns
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 14.0 A 2N7227 1200
di/dt ≤ 100 A/µs, VDD ≤ 30 V, IF = 12.0 A 2N7228 1600

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 4 of 9


2N7224, 2N7225, 2N7227 and 2N7228

GRAPHS
Thermal Response (ZθJC)

t1, Rectangle Pulse Duration (seconds)

FIGURE 1
Thermal Impedance Curves

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 5 of 9


2N7224, 2N7225, 2N7227 and 2N7228

GRAPHS (continued)

FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs


ID DRAIN CURRENT (AMPERES)

ID DRAIN CURRENT (AMPERES)


TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)
For 2N7224 For 2N7225
ID DRAIN CURRENT (AMPERES)

ID DRAIN CURRENT (AMPERES)

TC CASE TEMPERATURE (ºC) TC CASE TEMPERATURE (ºC)


For 2N7227 For 2N7228

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 6 of 9


2N7224, 2N7225, 2N7227 and 2N7228

GRAPHS (continued)

FIGURE 3 – Maximum Safe Operating Area

ID, DRAIN CURRENT (AMPERES)

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7224


ID, DRAIN CURRENT (AMPERES)

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7225

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 7 of 9


2N7224, 2N7225, 2N7227 and 2N7228

GRAPHS (continued)

ID DRAIN CURRENT (AMPERES)

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7227


ID DRAIN CURRENT (AMPERES)

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N7228

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 8 of 9


2N7224, 2N7225, 2N7227 and 2N7228

PACKAGE DIMENSIONS

NOTES: Dimensions
1. Dimensions are in inches. Ltr Inch Millimeters Notes
2. Millimeters are given for general information only. Min Max Min Max
3. Glass meniscus included in dimension D and E.
BL .535 .545 13.59 13.84
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are CH .249 .260 6.32 6.60
equivalent to Φx symbology. LD .035 .045 0.89 1.14
LL .510 .570 12.95 14.48
LO .150 BSC 3.81 BSC
LS .150 BSC 3.81 BSC
MHD .139 .149 3.53 3.78
MHO .665 .685 16.89 17.40
TL .790 .800 20.07 20.32 3, 4
TT .040 .050 1.02 1.27
TW .535 .545 13.59 13.84 3, 4
Term 1 Drain
Term 2 Source
Term 3 Gate

T4-LDS-0102, Rev. 3 (121485) ©2012 Microsemi Corporation Page 9 of 9


Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

Microchip:
2N7224 2N7225 2N7228 2N7227

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