Deveopment of Saw Sensor
Deveopment of Saw Sensor
Abstract
Long-term monitoring of environmental warfare agengts is a challenge for chemical gas sensors. To address this issue,
we developed a 433 MHz passive wireless surface acoustic wave (WSAW) gas sensor for dimethyl methylphosphonate
(DMMP) detection. This WSAW gas sensor includes a YZ lithium niobate (LiNbO3) substrate with metallic interdigital
transducers (IDTs) etched on it, and an antenna was placed near the IDT. A DMMP-sensitive viscoelastic polymer
fluoroalcoholpolysiloxane (SXFA) film was prepared on a LiNbO3 substrate, and mode modeling coupling was used to
optimize the design parameters. The sensor can function properly in an environments between −30 °C and 100 °C
with humidity less than 60% RH. When the wireless transmission distance was within the range of 0–90 cm, the sensor
noise increased with distance, and the stability was less than 32°/h. While optimizing the film thickness of SXFA, a
relationship was observed between sensor sensitivity and film thickness. When the film thickness of SXFA reached
450 nm, the optimal value was reached. At a distance of 20 cm between the transmitting and receiving antennas,
DMMP was detected at different concentrations with the developed WSAW gas sensor. The lower detection limit of
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DMMP was 0.48 mg/m3, the sensitivity of the sensor was 4.63°/(mg/m3), and repeatable performance of the sensor
was confirmed.
SPUDT R1 R2 R3
R1 R2 R3
Sensing signals
Transceiver unit Antenna 41qqYX-LiNbO3 Sensitive film
Fig. 1 Schematic and working principle of the proposed SAW chemical sensor
powered by batteries, problems such as short duration, By evaluating the phase shifts, we extractd the gas
large power consumption in a low-temperature environ- concentration.
ment, and the impact of battery replacement during Compared with the currently available gas sensors, the
detection have not been solved. To address this situation, developed passive WSAW sensor has many advantages.
we coupled passive wireless surface acoustic wave First, batteries or any power supply was not needed to
(WSAW) gas sensing; this technology ran on battery operate the sensor. Second, the sensor can be used in
power and could also perform CWA detection through hazardous areas that are not easily accessible to personnel,
radar transmission. The development of WSAW sensors and the sensor can be operated wirelessly. Third, it can be
has been reviewed in recent years23–27. An increasing operated without a complicated detection system. Finally,
number of passive wireless sensors have been used in the sensor was lightweight, small, and could withstand
physical parameter detection of temperature28–31, pres- extremely harsh environmental conditions.
sure32–34, and moisture35,36. Passive SAW-based sensors
for wirelessly sensing harmful gases, such as CO237–43, SAW device design and fabrication
NO244,45, NH346, O247,48, and other volatile organic Design considerations of reader unit
compounds, were proposed, where the phase signal from A hardware structure for the reader includes the main
the reflectors of the SAW reflective delay line configura- control unit (MCU), transmitting unit, and receiving unit,
tion induced by gas adsorption between the sensitive as shown in Fig. 2. A frequency-stepped continuous wave
interface and target gas was picked for gas sensing49. All radar technique, which can generate a continuously
these studies provide favorablesuitable references for variable frequency sine wave excitation signal, was used in
developing a real practical wireless and passive SAW our research50. The arrow direction in Fig. 2 indicates the
chemical sensor. propagation direction of the signal, transmitting unit, and
In this study, we developed a new passive WSAW receiving unit that share a transceiver antenna. The MCU
chemical sensor with a 433 MHz central frequency and an communicated with the PC through 3-wire UART, the
associated viscoelastic sensitive layer fluoroalcohol poly- antenna, and the SAW sensor exchange through EM
siloxane (SXFA) compatible with the transducer, which waves.
enabled detection of DMMP. The schematic and working The MCU comprised an STM32 single-chip micro-
principle of the sensor are illustrated in Fig. 1. The computer and its auxiliary circuit. STM32 is a powerful
developed platform consists of a SAW reflective delay embedded microprocessor chip that is powerful for
line, reader unit, and connected antennas. In the reflective computing and integrated many peripheral units. This
delay line, single-phase unidirectional transducers unit also included radar control, digital-to- analog con-
(SPUDTs) and reflectors were placed in a row along the version, display, and communication interface functions.
SAW propagation direction on a YZ LiNbO3 piezoelectric The transmitting unit comprised a frequency synthesi-
substrate39. When the SPUDTs received electromagnetic zer and a transceiver separating circuit. The frequency
(EM) energy from the reader unit through a connected synthesizer was responsible for providing signals for the
antenna, the SPUDTs generated a SAW on the surface local oscillator end of the transmission circuit and the
through the piezoelectric effect and propagated it toward mixing circuit. The main function of the frequency syn-
the reflectors. The propagating SAW was partially thesizer was to generate sine waves of different fre-
reflected from the reflectors, and the reflected SAW was quencies and simultaneously ensure that the power of the
reconverted into EM waves by the SPUDTs and trans- signal provided would meet the requirements of the
mitted to a reader unit. Then, the adsorption of DMMP subsequent parts. The transceiver separation circuit was
on the SXFA polymer film can induce a change in mass responsible for the separation of high-frequency trans-
loading and SAW velocity, which results in a phase shift. mitted signals and received signals so that they could
Pan et al. Microsystems & Nanoengineering (2024)10:4 Page 3 of 12
Transmission unit
Frequency Transceiver
synthesizer separating reader
excitation
SAW
response
resonant
Mixer
MCU Small-signal
amplifier
Signal conditioning
Reciver unit
move forward according to the predetermined signal Table 1 SAW sensor design parameters
transmission without mutual interference or conflict.
The receiving unit comprised a small signal amplifier, a Structure parameters Value
frequency mixer, and a signal conditioning component.
The small signal amplifier is responsible for preliminary Piezoelectric YZ-LiNbO3
amplification of the received reflected signal to prevent Acoustic wavelength 8 μm
excessive noise in the circuit from obfuscating the useful IDT pairs 25
received signal and to simultaneously prevent introducing
Electrode Al
excessive noise. The frequency mixer is responsible for
mixing the received signal with the local oscillator signal Reflector electrodes 10
to reduce the received signal to the low-frequency band Type of reflectors short-circuited gratings
that can be sampled. The signal conditioning part is Aperture 100λ
responsible for amplifying and shaping the low-frequency
signal after mixing to ensure that the signal meets the
requirements of the subsequent sampling circuit and does peak is consistent with that of the sensor design, and a
not affect the information carried in the signal. high S/N is obtained.
Design and fabrication of the SAW sensor Optimal selection of devices with different structures
A reflective delay line structure was used as a SAW The stability of sensor devices is crucial, as it directly
sensor. To obtain sensor devices with favorable perfor- affects the detection effect of the sensor on the target gas.
mance, we consider designs that improve the signal-to- To obtain SAW sensor devices with favorable perfor-
noise ratio (S/N) and reduce the insertion loss, as well as mance in simulation, six types of SAW devices with dif-
factors influencing sharp reflection peaks in the time ferent structures are designed and manufactured, as
domain and spurious noise51. Thus, the YZ LiNbO3 shown in Table 2.
piezoe-lectric crystal was selected as the sensor substrate For types 1 and 2 devices, the reflection peak S/N of the
due to its large electromechanical coupling Factor K2 bidirectional acoustic transmission IDT structure was
(4.5%). SPUDTs were used in the fabricated SAW sensor approximately 10 dB higher than that of the SPUDT
because they could direct most of the SAW energy to the structure device. More narrowly, the prepared SPUDT
reflectors, and thus, high S/N and lower insertion loss structure device had more line defects due to the limita-
were ensured52. The operation frequency of the SAW tion of the production process level, which results in poor
sensor was set to 433 MHz to meet the requirement of the device performance, such that it was not used. For types 3,
sweep frequency bandwidth of the reader unit. The SAW 4, and 5 devices, the difference between the devices with
sensor used for sensing gas was simulated to obtain S11 in and without aluminum film, that is, the second reflection
the time domain. Table 1 shows the design parameters, peak, was approximately 3–5 dB smaller than the first
and Fig. 3 shows that the relative position of the reflection because of the acoustic attenuation caused by the
Pan et al. Microsystems & Nanoengineering (2024)10:4 Page 4 of 12
a b
0 Experimemt result
Simulation result
–20
R1 R2
–40
S11 (dB)
–60
–80
SPUDT Reflector
–100
–120
0 1 2 3 4 5
Time (Ps)
Pm
8P
Fig. 3 a Prepared physical diagram of the delay line device. b Comparison between experimentally measured and simulated reflection peaks in the
time domain
Device type IDT structure Position of reflectors Metal thin film Reflector 1 Reflector 2 S/N
discontinuity of the aluminum film boundary. The sub- reader unit was connected to the PC with transmission
sequent coating of the sensitive film also led to acoustic lines. The working process of the entire system was as
attenuation. The greater the thickness is, the greater the follows: the EM wave signal emitted by the reader was
acoustic attenuation, and the lower the S/N, so a decrease transmitted to the sensor through the antenna and then
in the S/N ratio affects the performance of the sensor. For converted into a SAW signal by an interdigital transducer.
type 6 devices, the second reflection peak was approxi- This SAW signal propagated along the substrate to the
mately 0.5 dB because of the high utilization of acoustic reflector and was reflected back and then converted back
waves and high S/N of the two-sided reflector structure into an electrical signal through an interdigital transducer,
compared with the single-sided reflector structure. with the reader receiving the signal through the antenna.
According to the S/N, loss, and ability of the device to
withstand film thickness during the later coating process, Temperature and humidity experiments for the WSAW
type 6 (bidirectional acoustic propagation IDT + , bilat- sensor system
eral reflectors + aluminum film free structure) devices Temperature and humidity experiments were carried
have higher S/Ns and peak values, which make them more out to further verify the environmental adaptability of the
suitable as sensor structures for detecting gases, thereby test system. This temperature test setup is illustrated in
achieving the maximum sensitivity of the prepared sensor. Fig. 5.
Within the range of −30–100 °C, a temperature mea-
Measurement setup surement point was set at every 10 °C interval, and 150
Figure 4 shows the experimental setup used for sensing sets of tests were conducted at each temperature mea-
data collection. Two fabricated antennas were connected surement point. The test results are shown in Fig. 6. The
to the reader unit and fabricated microsensor, and the temperature measurement sensitivity was approximately
Pan et al. Microsystems & Nanoengineering (2024)10:4 Page 5 of 12
40
20
S11 (dB)
0
–20
PC
–40
0 1 2
Ps)
(P
Transmission line
SAW
sensor
Reader Unit
Antenna Antenna
a 5000
b 300
Phase
Linear fitted curve
4000 250
Number of samples
Phase (q) 200
3000
150
2000
100
1000 y = 36.2 x + 1084.6
R-Square: 0.99985 50
0 0
–30 0 30 60 90 –0.9 –0.6 –0.3 0.0 0.3 0.6 0.9
Temperature (qC) Difference in temperature (qqC))
Fig. 6 a System temperature test and (b) temperature test error diagram
30
Δv
Phase shift (qq)
the wireless distance increased, as shown by Eq. (1). Stability of the WSAW sensor
4πR As discussed above, when the distance between the
Loss ¼ 20ln ¼ 32:45 þ 20lnfðMHzÞ þ 20lnRðkmÞ transmitting and receiving antennas is less than 30 cm, the
λ
ð1Þ WASW might be stable. Three devices were selected to
confirm the stability of the prepared WSAW sensors, and
where Loss is the transmission loss (dB), R is the the distance was set to 20 cm. We found that the phase
transmission distance (km), and f is the frequency shift was approximately 25°/h, 32°/h, and 35°/h, which
(MHz). When the sensor was coated with a sensitive indicated that the sensor could achieve long-term stability
polymer film between the first and second reflectors, the at this distance, as shown in Fig. 11.
Pan et al. Microsystems & Nanoengineering (2024)10:4 Page 7 of 12
Sample cell
Temperature controller
Dilution gas (room air)
Mixture
Fig. 8 Schematic diagram of the instrument and setup used for data acquisition and management
10 Fitted curve
Phase shift (qq)
5 cm 10 cm 20 cm 30 cm 40 cm 50 cm 60 cm 70 cm 80 cm 90 cm
40
0 Signal to noise ratio (dB)
–10
35
–20
0 100 200 300 400 500
Points
Fig. 9 Baseline noise value at different wireless distances (25 °C, 40% 30
RH)
Distance 5 10 20 30 40 50 60 70 80 90 Fig. 10 S/N under different wireless distances (21 °C, 40% RH)
(cm)
Phase shift 1.35 2.33 4.30 4.51 4.85 5.19 5.50 6.52 8.50 11.63
Relationship between the sensor response and SXFA film
(°)
thickness
As a type of glassy-rubbery polymer material, the
baseline noise characteristic functional group -CF3 in SXFA has hydro-
DMMP with a concentration of 3.8 mg/m3 was tested gen bond acidity and can selectively adsorb DMMP, an
using the prepared sensors at different wireless trans- organic phosphorus compound with hydrogen bond
mission distances, as shown in Fig. 12. The figure shows alkalinity at room temperature. This condition mainly
the baseline noise fluctuation value and response value to occurs due to the reversible hydrogen bonds that are
DMMP detection at various wireless distances. As the formed between weak acid and weak base functional
distance increased, the baseline noise fluctuation of the groups. The main effects of polymer films on the propa-
WSAW sensor gradually increased, but the response gation characteristics of SAW are viscoelastic effects and
values of the WSAW sensor to DMMP at different mass loading effects, as reported in Eq. (3).
wireless distances were basically consistent and did not
change. This result indicated that the response signal of ΔY Δα Δv X
i
ci β MðiÞ
¼ j ¼ ¼1 i tanh jβi h ð3Þ
the WSAW sensor to a certain concentration of target gas Ko Ko vo 3
ω
was independent of the wireless distance, but as the
transmission distance increased, the baseline noise gra- In Equation (3), β2i ¼ ω2 ðρ E i =ðV 20 ÞÞ=M ðiÞ , V0 is the
dually increased, ultimately resulting in an S/N that was SAW velocity after disturbance, and Ei is the deformation
too small to enable accurate detection. modulus, E1 = G, E2 = 0, E3 = 4 G(3 K + G)/(3 K + 4 G),
Pan et al. Microsystems & Nanoengineering (2024)10:4 Page 8 of 12
–30 60
0.7
1
–70 0.6
0 1000 2000 3000 4000
12
because of the viscoelastic effect of SXFA as a polymer-
10 sensitive material. As SXFA used in this manuscript is a
kind of multiple molecular layer, according to linear sol-
Phase shift (qq)
a b
P2 = 12.29 Pm
P7 = 5.66 Pm
P3 = 12.25 Pm P1 = 13.64 Pm
P1 = 20.51 Pm P6 = 7.90 Pm
P5 = 4.24 Pm
P4 = 13.88 Pm P5 = 10.98 Pm
P4 = 5.50 Pm
P6 = 11.64 Pm
P2 = 7.39 Pm
P3 = 5.86 Pm P7 = 10.81 Pm
Fig. 14 Polarizing microscopy analysis of SXFA films. a and b represent device a and device b, respectively
Table 4 Particle sizes of different SAW-SXFA films obtained using polarizing microscopy
Device P1 (μm) P2 (μm) P3 (μm) P4 (μm) P5 (μm) P6 (μm) P7 (μm) Average (μm)
seven cluster particles in a region with more clusters were difference between the darkest and brightest parts of the
selected to analyze the surface uniformity separately, and uneven structure. As the dark part is clearly more uniform
the particle sizes of various clusters are shown in Table 4 and regular than the bright part, the surface of the surface
and Fig. 14. facial mask is considered uniform. This result is further
Table 4 shows that the selected cluster shapes are ran- confirmed by cluster particle state of the polarization
dom. The seven cluster diameters in (a) or (b) in Fig. 14 micrograph.
are basically similar: the average diameters of cluster Generally, when the surface roughness Sq of the film is
particles in device (a) and device (b) are 8.15 μm and less than 20 nm, the surface of the film is considered
12.21 μm, respectively, most clusters have diameters of uniform. Table 5 shows that the Sq value of the SXFA film
approximately 10 μm, and the particle diameters between is 10.786 nm, indicating that the prepared SXFA film is
devices (a) and (b) are also substantially the same. uniform, as shown in Table 5.
At the same time, the areas beyond the 14 clusters are
transparent, indicating the absence of clustering in these SEM interface analysis of the SXFA film
areas because SXFA is a transparent gel-like polymer. The To verify the morphology and surface coverage of SXFA
results show that a uniformly sensitive film with favorable thin films and confirm their surface morphology, we
performance can be obtained by controlling the spin performed SEM for surface analysis of the films coated on
coating conditions. the SAW delay line. Figure 16 shows an enlarged cross-
sectional view of the film. The image shows that the
Atomic Force Microscopy (AFM) interface analysis of the grown film is porous and contains particle morphology
SXFA Film throughout the substrate. After spin coating and solvent
For imaging of a 10 μm × 10 μm area, interface analysis volatilization, the specific surface area of the film increa-
of the surface of the SXFA film was performed using ses, indicating that the microstructure is conducive to 3D
atomic force microscopy (AFM) within the image range to adsorption of the measured gas. Figure 16 also shows that
further obtain more relevant surface information (Fig. 15 the polymer has an irregular geometric shape. Therefore,
and Table 5). In the 2D photograph in Fig. 15a, light the prepared SXFA film is an amorphous polymer.
colors correspond to upward bumps in the film, while
dark colors correspond to downward depressions. They WSAW gas sensor performance
are considered uniform because of their low color con- At room temperature, we set the distance between the
trast. The 3D photo shown in Fig. 15b shows the height transmitting antenna and receiving antenna to 20 cm and
Pan et al. Microsystems & Nanoengineering (2024)10:4 Page 10 of 12
10 Pm
Amplitude range
–18.8 n
Y*10 Pm
X*10 Pm
0 Pm
0 Pm X* 10 Pm
Fig. 15 Analysis of the SXFA film by AFM. a 2D and (b) 3D spectra of SXFA
Area Sa Sq Sy Sp Sv Sm
10
Equation y = a + b*x
Adj. R-Squa 0.97558
Value Standard Err
8 B Intercept -0.9521 0.51439
B Slope 4.62729 0.3266
Phase shift (qq)
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
S4800 15.0 kV x100 k SE (U) 500 nm Concentration of DMMP (mg/m3)
Fig. 16 SEM image of the SXFA film on the SAW delay line Fig. 17 Relationship between the WSAW sensor response signal and
DMMP concentration (21 °C, 33% RH)
815
Phase shift (qq)
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