Antifuse Technology
Antifuse technology is a non-volatile programming technology used in semiconductor devices,
particularly in field-programmable gate arrays (FPGAs) and programmable read-only memory
(PROM). Unlike regular fuses, which "break" to create an open circuit, anti-fuses "connect"
or create a conductive path when programmed.
Structure of an anti-fuse
An anti-fuse typically consists of:
• Electrodes: Two terminals, usually made of metal or polysilicon.
• Dielectric Layer: A thin insulating material, often silicon dioxide (SiO₂) or amorphous
silicon, placed between the electrodes.
During programming, the dielectric breaks down, and a conductive path forms between the two
electrodes.
Working Principle of Antifuse Technology
1. Unprogrammed State (High Resistance):
o In its default state, an anti-fuse element behaves like an open circuit with high
resistance (typically in the MΩ range).
o No current flows between the two terminals because there is no conductive path.
2. Programming (Breaking the Dielectric):
o Programming involves applying a high voltage (referred to as a programming
voltage, typically 10–20V) across the antifuse.
o This high voltage breaks down the insulating dielectric layer in the anti-fuse
structure, forming a permanent, low-resistance conductive path (typically a few
ohms).
o The conductive material created is often a mix of metal and silicon (polysilicon
or tungsten) that forms during dielectric breakdown.
3. Programmed State (Low Resistance):
o After programming, the anti-fuse becomes a low-resistance connection (a
permanent short circuit), which acts like a closed switch between the two
terminals.
