S DU/D3055L2

S amHop Microelectronics C orp.

May,2004 ver1.1

N-C hannel E nhancement Mode Field E ffect Trans is tor

P R ODUC T S UMMAR Y F E AT UR E S

V DS S ID R DS (ON) ( m W ) Max
S uper high dense cell design for low R DS (ON ).
R ugged and reliable.
60 @ V G S = 4.5V
20V 15A TO-252 and TO-251 P ackage.
70 @ V G S = 2.5V

G G
D
S S G
S DU S E R IE S S DD S E R IE S
TO-252AA(D-P AK) TO-251(l-P AK)
S

AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted)

P arameter S ymbol Limit Unit
Drain-S ource Voltage V DS 20 V
Gate-S ource Voltage V GS 12 V

Drain C urrent-C ontinuous a @ T J =125 C ID 15 A

b
-P ulsed (300ms Pulse Width) IDM 25 A

Drain-S ource Diode Forward C urrent a IS 15 A

Maximum P ower Dissipation a PD 50 W

Operating Junction and S torage T J , T S TG -55 to 150 C
Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-C ase R JC 3 C /W

Thermal R esistance, Junction-to-Ambient R JA 50 C /W

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E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter S ymbol Condition Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 20 V
Zero Gate Voltage Drain Current IDS S V DS = 20V, V GS = 0V 1 uA
Gate-Body Leakage IGS S V GS = 8V, V DS = 0V 100 nA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 0.7 V
V GS =4.5V, ID = 6.0A 34 60 m-ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS =2.5V, ID = 5.2A 45 70 m-ohm

On-S tate Drain Current ID(ON) V DS = 5V, V GS = 4.5V 20 A

Forward Transconductance gFS V DS = 10V, ID = 6.0A 17 S
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance C IS S 705 PF
V DS =8V, V GS = 0V
Output Capacitance C OS S 280 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 65 PF
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = 10V, 10 ns
R ise Time tr ID = 1A, 15 ns
V GE N = 4.5V,
Turn-Off Delay Time tD(OFF) R L = 10 ohm 35 ns
Fall Time tf R GEN = 6 ohm 20 ns
V DS =10V,ID =6A,V GS =10V 25 nC
Total Gate Charge Qg
V DS =10V,ID =6A,V GS =4.5V 9.3 nC
Gate-S ource Charge Q gs V DS =10V, ID = 6A, 2 nC
Gate-Drain Charge Q gd V GS =10V 2 nC
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E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unles s otherwis e
C
Parameter S ymbol Condition Min Typ Max Unit
5 DR AIN-SOUR CE DIODE CHAR ACTER ISTICS b
Diode Forward Voltage VSD V GS = 0V, Is =1.7A 0.72 1.2 V

Notes
a.S urface Mounted on FR 4 Board, t <= 10sec.
b.Pulse Test:Pulse Width <=300us, Duty Cycle<= 2%.
c.Guaranteed by design, not subject to production testing.
25 25

V G S =10,9,8,7,6,5,4,3V
20 20
ID , Drain C urrent(A)

I D , Drain C urrent (A)

15 V G S = 2V 15

10 10
T j=125 C 25 C
5 5
-55 C
0 0
0 1 2 3 4 5 6 0.0 0.5 1 1.5 2 2.5 3
V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics

3000 1.8
R DS (ON) , On-R es is tance(Ohms )

V G S =4.5V
I D =6A
2500 1.6
C , C apacitance (pF )

2000 1.4
(Normalized)

1500 1.2

1000 1.0
C is s

500 0.8
C os s
C rs s
0 0.6
0 2 4 6 8 10 12 -50 0 50 100 150

V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C )

F igure 3. C apacitance F igure 4. On-R esistance Var iation with

Temper ature

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1.09 1.15

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

V DS =V GS 1.10
1.06 I D =250uA
I D =250uA

B V DS S , Normalized
1.03 1.05
V th, Normalized

1.00 1.00

0.97 0.95
5
0.94 0.90

0.91 0.85
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igur e 5. G ate T hr eshold V ar iation F igur e 6. B r eak down V oltage V ar iation

with T emper atur e with T emper atur e

36 20
gF S , T rans conductance (S )

30 10
Is , S ource-drain current (A)

24

18

12
V DS =10V 1
6
T J =25 C
0 0
0 3 6 9 12 15 0.4 0.6 0.8 1.0 1.2 1.4

I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V )

F igur e 7. T r ansconductance V ar iation F igur e 8. B ody Diode F or war d V oltage
with Dr ain C ur r ent V ar iation with Sour ce C ur r ent

10 50
V G S , G ate to S ource V oltage (V )

it
V DS =10V L im
)
8 I D =6A 10 ( ON 10
I D , Drain C urrent (A)

S
RD ms
10
0m
6 s

11 1s
DC
4

2 0.1 V G S =4.5V
S ingle P ulse
T c=25 C
0 0.03
0 4 8 12 16 20 24 28 32 0.1 1 10 20 50
Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V )
F igur e 9. G ate C har ge F igur e 10. M aximum Safe
O per ating A r ea
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V DD
ton toff
RL td(on) tr td(off) tf
V IN 90%
90%
D V OUT
VG S V OUT 10% INVE R TE D 10%
R GE N G
90%
6
50% 50%
S V IN
10%

P ULS E WIDTH

F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms

1
T ransient T hermal Impedance

D=0.5
r(t),Normalized E ffective

0.2
0.1
P DM
0.1
0.05
t1
t2
0.02

0.01 1. R J A (t)=r (t) * R J A

2. R J A =S ee Datas heet
S ING LE P ULS E 3. T J M-T A = P DM* R J A (t)
4. Duty C ycle, D=t1/t2
0.01
-5 -4 -3 -2 -1
10 10 10 10 10 1 10

S quare Wave P uls e Duration (s ec)

F igure 13. Normalized T hermal T rans ient Impedance C urve

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5 35 9 3
95 05 7 41
7 85 30 3
84 0.94 3 3
4 5
9 3 9 1
6.00 0 36 4

2.29 BSC 0.090 BSC

9.70 1 82 398
1.425 1.625 56 0.064
0.650 0.850 6 33
L2 0.600 REF. 0.024 REF.

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TO251 Tube/TO-252 Tape and Reel Data
TO-251 Tube

" A"

TO-252 Carrier Tape

UNIT:
PACKAGE A0 B0 K0 D0 D1 E E1 E2 P0 P1 P2 T
TO-252 6.80 10.3 2.50 1.5 16.0 1.75 7.5 8.0 4.0 2.0 0.3
2 + 0.1
(16 0.1 0.1 0.1 0.3 0.1 0.15 0.1 0.1 0.15 0.05
- 0

TO-252 Reel

UNIT:
TAPE SIZE REEL SIZE M N W T H K S G R V
330 97 17.0 2.2 13.0 2.0
16 330 10.6
+ 1.5 + 0.5
0.5 1.0 - 0.2
0.5
- 0