MP4104
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1)
MP4104
Industrial Applications
High Power Switching Applications.
Unit: mm
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching.
· Small package by full molding (SIP 10 pin)
· High collector power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C)
· High collector current: IC (DC) = 4 A (max)
· High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 100 V
Emitter-base voltage VEBO 6 V
JEDEC ―
DC IC 4
Collector current A JEITA ―
Pulse ICP 6
Continuous base current IB 0.5 A TOSHIBA 2-25A1A
Collector power dissipation Weight: 2.1 g (typ.)
PC 2.0 W
(1 device operation)
Collector power dissipation
PT 4.0 W
(4 devices operation)
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Array Configuration
3 5 7 9
4 6 8
2
1 10
R1 R2
R1 ≈ 4.5 kΩ R2 ≈ 300 Ω
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MP4104
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance of junction to
ambient ΣRth (j-a) 31.3 °C/W
(4 devices operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes TL 260 °C
(3.2 mm from case for 10 s)
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 120 V, IE = 0 A ― ― 10 µA
Collector cut-off current ICEO VCE = 100 V, IB = 0 A ― ― 10 µA
Emitter cut-off current IEBO VEB = 6 V, IC = 0 A 0.5 ― 2.5 mA
Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 A 120 ― ― V
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 A 100 ― ― V
hFE (1) VCE = 2 V, IC = 1.5 A 2000 ― 15000
DC current gain ―
hFE (2) VCE = 2 V, IC = 3.0 A 1000 ― ―
Collector-emitter VCE (sat) IC = 1.5 A, IB = 3 mA ― ― 1.5
Saturation voltage V
Base-emitter VBE (sat) IC = 1.5 A, IB = 3 mA ― ― 2.0
Transition frequency fT VCE = 2 V, IC = 0.5 A ― 60 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0 A, f = 1 MHz ― 30 ― pF
Turn-on time ton Output ― 0.3 ―
IB1
Input
20 Ω
20 µs IB2
Switching time Storage time tstg ― 2.0 ― µs
IB1
VCC = 30 V
IB2
Fall time tf ― 0.4 ―
IB1 = −IB2 = 3 mA
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MP4104
IC – VCE IC – VBE
6 6
10 3 1 Common emitter
5 0.5 5 VCE = 2 V
(A)
(A)
0.3
4 4
IC
IC
Collector current
Collector current
0.2
3 3
2 IB = 0.15 mA 2
Common emitter Ta = 100°C 25 −55
1 1
Ta = 25°C
0
0 0
0 1 2 3 4 5 6 7 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)
hFE – IC VCE – IB
20000 2.4
Common emitter Common emitter
VCE = 2 V Ta = 25°C
(V)
10000 2.0
hFE
VCE
5000 Ta = 100°C IC = 6 A
1.6
DC current gain
5
Collector-emitter voltage
3000 25 4
1.2 3
−55
2
1000 1
0.8
500 0.1
0.5
0.4
300
0.05 0.1 0.3 0.5 1 3 5 10
0
Collector current IC (A) 0.1 0.3 1 3 10 30 100 300 500
Base current IB (mA)
VCE (sat) – IC VBE (sat) – IC
10 10
Common emitter
Collector-emitter saturation voltage
Common emitter
Base-emitter saturation voltage
IC/IB = 500
5 5 IC/IB = 500
VCE (sat) (V)
3
VBE (sat) (V)
Ta = −55°C
Ta = −55°C
1 1
100 25
25
0.5 100 0.5
0.3 0.3
0.1 0.3 0.5 1 3 5 10 0.1 0.3 0.5 1 3 5 10
Collector current IC (A) Collector current IC (A)
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MP4104
rth – tw
300
Curves should be applied in thermal
(°C/W) limited area. (4)
100 (single nonrepetitive pulse)
Below figure show thermal resistance per
rth
1 unit versus pulse width. (1)
30
Transient thermal resistance
(3)
(2)
10
3
-No heat sink and attached on a circuit board-
(1) 1 device operation
1 (2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation Circuit board
0.3
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (s)
Safe Operating Area ∆Tj – PT
10 160
(°C/W)
IC max (pulsed)*
5
(1) (2) (3) (4)
3 120
rth
1 ms*
100 µs*
(A)
Transient thermal resistance
10 ms*
IC
1 80
Collector current
0.5 Circuit board
-Circuit board-
0.3 40 (1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
0.1 (4) 4 devices operation
*: Single nonrepetitive pulse 0
Ta = 25°C 0 1 2 3 4 5
0.05 Curves must be derated linearly
VCEO max Total power dissipation PT (W)
with increase in temperature.
0.03
1 3 5 10 30 50 100 200
Collector-emitter voltage VCE (V)
PT – Ta
8
-Attached on a circuit board-
(1) 1 device operation
(W)
(2) 2 devices operation
(3) 3 devices operation
6
PT
(4) 4 devices operation
Total power dissipation
(4)
4
Circuit board
(3)
(2)
2
(1)
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
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MP4104
RESTRICTIONS ON PRODUCT USE 000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
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document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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