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5G Doherty PA Design and Measurement

The seminar discusses the design and measurement of 5G Doherty Power Amplifiers (PAs) by iCana, highlighting the challenges and advancements in PA technology for improved efficiency and linearity in 5G applications. It covers various PA topologies, design tips, and the importance of simulation in achieving optimal performance. The presentation concludes with an overview of iCana's Doherty PA portfolio and the ongoing innovations in the field to meet future communication requirements.

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0% found this document useful (0 votes)
232 views35 pages

5G Doherty PA Design and Measurement

The seminar discusses the design and measurement of 5G Doherty Power Amplifiers (PAs) by iCana, highlighting the challenges and advancements in PA technology for improved efficiency and linearity in 5G applications. It covers various PA topologies, design tips, and the importance of simulation in achieving optimal performance. The presentation concludes with an overview of iCana's Doherty PA portfolio and the ongoing innovations in the field to meet future communication requirements.

Uploaded by

cuonghm.hust
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

R&S 5G FR1 Power Amplifier Seminar

5G Doherty
PA Design and Measurement
Clement POTIER – Staff MMIC Designer
29/06/2023

CONFIDENTIAL
Outline
 Introduction  Doherty design examples
• New challenges in PA design • Ideal structures and product variants
• iCana’s profile • Design tips
 Different PA topologies for complex telecom  Back in the lab
signals • iCana’s setup in today’s booth
• Review on amplification classes  Doherty PA FR1 catalog of iCana
• Efficiency VS linearity
• AB class PAs, LMBA, Outphasing, Doherty,…  Conclusion
 Basics of Doherty
• Load modulation
• Matching and lambda/4
• Importance of phase distribution
• sizing

CONFIDENTIAL 2
A World of Data
 IOT, augmented reality, connected cars, … => Need for more
bandwidth, higher data rate, higher output power, higher
integration, better efficiency… But always with the best linearity!
 5G Radio Access Network (RAN): a new architecture enabling us to
achieve these goals, but chips’ architecture also need to re-invent
themselves while staying cost competitive
 PA designers will be able to play with different leverages:
• Active components semiconductor process
• Biasing techniques
• Exotic amplification classes
• Load modulation
• Packaging co integration

CONFIDENTIAL 3
iCana’s Profile
 iCana is a fabless semiconductor component supplier
specializing in design and manufacturing of RF components for
wireless communication. Our primary markets are 5G NR FR1
and FR2 infrastructure together with automotive connectivity

CONFIDENTIAL 4
PA Design Must Comply With New Standards And Modulations Signals
 CAD design tools to help achieve best performances
and multi-chip integration
• Small signal • Packaging
• High power • 3D EM
• Linearity • LVS / DRC
• Multi technology • Sensitivity / Montecarlo

 Higher order modulation


• ➔ 802.11be supports up to 4096-QAM!
(WiFi 5 “only” 256-QAM”)
• Circuit envelope simulator
 Higher bandwidth but avoid signal
 Higher Peek to Average Ratio (PAR) coexistence and spectrum sharing
• Design for higher Psat • Strong gain flatness
• Design for higher backoff efficiency • Sharp gain profile
• Harmonic balance / Intermod • Harmonics rejection and dedicated filtering

CONFIDENTIAL 5
Designers’ Choice – Technology / Process
 Depending on the targeted power, voltage biasing
availability, integration and cost several options can
be picked
 GaN/Si a game changer?

CONFIDENTIAL 6
Designers’ Choice – Amplification Class
 “Conventional” classes or high efficiency classes using
harmonics and waveform shaping (Class F, F-1,..),
switching devices (D, E), compensation network (J)

CONFIDENTIAL 7
By The Way How To Define Efficiency ?

No overlap No power
between delivered at
voltage and harmonics
current

CONFIDENTIAL 8
… And Linearity ?
 Biasing, physical effects in the semiconductor, gain
compression, intermodulation,… are sources of linearities

 In band distortion
• Gain compression
• Trapping effects
➔ EVM, OP1dB, AM/AM, AM/PM

 Out of band distortion Example of 2 tones response


• Harmonics
• Intermodulation
➔ OIP3, ACLR

CONFIDENTIAL 9
Nonlinear Behaviour Caused By Memory Effects
 Description
The memory effects are defined as changes in
the amplitude and phase of the distortion
components, due to the previous signals. Time
responses are not instantaneous anymore but
will be convolved by the impulse response of
the system
 They appear as:
• Asymmetries in the IMD products (frequency
domain)
• Dispersion in the decision points of the
constellation (time domain)

CONFIDENTIAL 10
Efficiency vs. Linearity

CONFIDENTIAL 11
Designers’ Choice – PA Topology
 5G modulated signals present non constant envelope
with high PAPR ratios
➔ We need good efficiency at high power and backoff
 Several PA topologies were investigated since several
years to address these trade-offs
• Load Modulated (Doherty, Chireix, Balanced,…), Envelope
Tracking, Harmonic Tuning, Switch mode, …
• Trade-off between performances and PA complexity

CONFIDENTIAL 12
Designers’ Choice – PA Topology
 Several PA topologies were investigated since several years to address these trade-offs
• Load Modulated (Doherty, Chiriex, Balanced,…), Envelope Tracking, Harmonic Tuning, Switch mode, …
• Trade-off between performances and PA complexity

CONFIDENTIAL 13
How To Choose? With The Specs!
 Standards define the appropriate levels
• 3GPP, small cells consortiums, ..
• Define the modulated schemes and signals
• Define the required linearity and output power for each frequency bands
 Market
• System line-ups
• Overall costs, footprint, design time
• Regions specificities

CONFIDENTIAL 14
Doherty Seems Interesting, Let’s Have A Look!
 Invented by W. H. Doherty at the Bell Labs in 1936
 The Doherty architectures propose to use 2 parallel
power cells, to try to maintain a constant saturation
level of the total PA, thus a high efficiency
This can be achieved by several key parameters :
• One power cell (Carrier / Main) acts as normal PA
with high efficiency at saturation, then needs to see
a different load with the increasing Pin/Pout
➔ Use another amplifier like in active load pull
• The other power cell (peaking / auxiliary) will not be
“active” at low power ➔ Class C
• Keep voltage swing constant to keep efficiency
constant
➔ Impedance Inverter Network in between
CONFIDENTIAL 15
The Doherty Amplifier Basics (1/7)

B, AB class

C class

CONFIDENTIAL 16
The Doherty Amplifier Basics (2/7) – Keep Constant VoutM
 If we consider a class B amplifier for the Main, VoutMax = Vdd – Vk
π Vout
 Thus efficiency is η = ∙ , if the load is constant, efficiency will
4 Vdd
change as collector Voltage will change with current increase
 If we can modulate the load such as Vout stays constant and only Ic
increases with Pin/Pout then the efficiency shall remain constant

CONFIDENTIAL 17
The Doherty Amplifier Basics (3/7) – Lambda/4 Section
 But then the 2 power cell must operate with independent voltage swings!
➔ Need to design an Impedance Inverter Network to isolate both of them

 One of the bandwidth limitation…

CONFIDENTIAL 18
The Doherty Amplifier Basics (4/7) – OBO Definition
 We define :

Saturation

 If OBO increases:
➔ Aux power cell size increases vs. Main size
➔ Aux bias point shift from deep class C
towards class B

CONFIDENTIAL 19
The Doherty Amplifier Basics (5/7) – Power Cells Sizing
 Starting from the required DPA output power Pout,DPA, and OBO,
the Main device can be sized

 The parameter identifying the Doherty region xbreak can be inferred


by solving the equation

 The Aux device can be sized

 The “virtual” bias point for the Aux device can be estimated

CONFIDENTIAL 20
The Doherty Amplifier Basics (6/7) – Defining The Loads
 The DPA output design parameter can be inferred

CONFIDENTIAL 21
The Doherty Amplifier Basics (7/7) – Trade-Offs

< 6 GHz > 6 GHz

 Parallel combination of transistor fingers  Parallel combination of transistor fingers


(power bars) (power bars)
• Negligible de-phasing • Significant de-phasing
 Series combination of transistors  Series combination of transistors
(stacking) (stacking)
• Little interstage matching needed • Complex interstage matching needed
• Stability • Stability
 Combination at PA level  Combination at PA level
• Off-chip • Off-chip
• On-chip • On-chip

CONFIDENTIAL 22
The Doherty Amplifier – Ideal Example

CONFIDENTIAL 23
The Doherty Amplifier – Ideal Example Driver And Hybrid
GaN power cells

CONFIDENTIAL 24
The Doherty Amplifier – Ideal Example Driver And Hybrid

CONFIDENTIAL 25
MMIC Solutions For Higher Frequencies

CONFIDENTIAL 26
The Doherty Amplifier – Design For Real 5G FR1 Product
 The PA must be cost competitive so hybrid solutions in over-molded packages are the best
approach
 Several topologies with one driver followed by one splitter or one splitter followed on
each branch by a driver then the Doherty power cell, uneven divider, uneven power cells,
die bar + matching, pre-matched cells,…
 Variants of Doherty, inverted, multi-way
 All the parasitic must be taken in account as the phase is critical ➔ need for complex
simulation benches and cosimulations with packages and different process in one module
 Bond wires need to be included
 Electro thermal simulations and accurate thermal / trapping models are needed

CONFIDENTIAL 27
The Doherty Amplifier – Design For Real 5G FR1 Product
 Active biasing technics aligned with process variations are mandatory,
especially for HBTs
 IMD3 simulations with different tone spacings
 Envelope simulations with 3gpp standard input signals
 Raw ACLR < -35dB to achieve -50dB after DPD
 All of that to … tune in the lab after manufacturing!

CONFIDENTIAL 28
Back In The Lab – iCana’s Booth Setup
 Large Signal Test Setup Diagram and non-overmolded DUT
 Modulated Signal: 5G NR, FDD, TM3.1, scs = 30kHz,
Bandwidth = 1 × 100 MHz, PAR = 8.5 dB
 Frequencies: 3.45, 3.55, 3.65 GHz
 Vcc1 = Vcc2 = Vcc3 = VBIAS = 5.0 V, VPAEN = 2.0 V

NGP800×2

CONFIDENTIAL 29
Back In The Lab – Measured Result

CONFIDENTIAL 30
Back In The Lab – Measured Result
 ACLR-L1 & ACLR-U1 vs. Output Power with / without DPD
H ACL L vs t t o er H ACL vs t t o er

H H
H H
H H

d c
d c
Raw ACLR

ACL
ACL
t t o er d m t t o er d m

H D D ACL L vs o er S ee H D D ACL vs o er S ee

H H
H H
H H
d c

d c
ACLR after DPD
ACL

ACL
t t o er d m t t o er d m
CONFIDENTIAL 31
iCana’s Doherty PA Portfolio For 5G FR1
4 W High-Efficiency Power Amplifiers 8 W High-Efficiency Power Amplifiers
Part Number Frequency Range (GHz) Part Number Frequency Range (GHz)

ARQSP1819-4 1.8 – 1.9 ICASP3338-8 3.3 – 3.8

ARQSP2122-4 2.1 – 2.2 ICASP3742-8 3.7 – 4.2

ARQSP2324-4 2.3 – 2.4 ICASP4450-8 4.4 – 5.0

ARQSP2527-4 2.5 – 2.7


20 W High-Efficiency Power Amplifiers
ARQSP3336-4 3.3 - 3.6
Part Number Frequency Range (GHz)
ARQSP3437-4 3.4 – 3.7
ICASP3338-20 3.3 – 3.8
ARQSP3742-4 3.7 – 4.2
ICASP3742-20 3.7 – 4.2
ARQSP4450-4 4.4 – 5.0
ICASP4450-20 4.4 – 5.0

CONFIDENTIAL 32
Conclusions
 5G and new communications are always pushing for more
power/efficiency/linearity
 There will always be trade-offs, pushing the efforts towards designers, foundries
to develop innovative structures who need back strong support and innovative
tools and instruments from testing and automation industry
 Doherty PAs are one of the topologies to assess these issues but as we explained
as also its limits. Is Doherty the answer to future 5G/6G requirements? Variations
and innovation around the DPA are flourishing thanks to the universities and
industry works to push these limits.
 Meet us our booth for more discussions ☺

CONFIDENTIAL 33
Sources
 The Doherty Power amplifier, Paolo Colantonio SC1 EuMIC, EuMW22
 Load Modulated RFPAs, Steve Cripps, SC1 EuMIC, EuMW22
 Linearization techniques Overview, Pere L. Gilabert, SC1 EuMIC, EuMW22
 PA Theoretical Foundation, Franco Giannini, SC1 EuMIC, EuMW22
 Doherty Power Amplifiers for Sub-6 GHz and Beyond-6 GHz: Challenges and Design Approaches,
A. Piacibello, V. Camarchia, EuMC31, EuMW22
 Improving RG GaN Success, Wolfspee, Mircowave Journal ebook, March 2022
 The Doherty Power Amplifier, P. Colantonio, F. Giannini, R. Giofre, L. Piazzon, Class Chapter of
University of Roma Tor Vergata, Italy
 Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitter, A. K. Kumaran, H. M.
Nemati, L. C. N. de Vreede, M. S. Alavi, Benelux RF conf. May 2023

CONFIDENTIAL 34
[Link]

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