u equals to 3/5 Nef
Tutorial-07
PYL563: Solid State Physics
Teaching Assistant: Shantanu Pathak
Course Coordinator: Prof. Sujit Manna
Submission Deadline: 29/04/2025
1. Sommerfeld Model and Hall Coefficient
Consider a metal which obeys the Sommerfeld model exactly.
(a) Derive the relation between the Hall coefficient RH and the Fermi energy EF . As-
sume the temperature is T = 0 K.
3/2 " 3/2 #−1
1 1 2me EF 1 1 2me EF
RH = and n = 2 ⇒ RH =
ne 3π ℏ2 e 3π 2 ℏ2
(b) Take the Fermi energy of silver to be EF = 5.52 eV. Find the Fermi velocity of a
conduction electron: r
2EF
vF =
me
(c) Given the resistivity of silver at room temperature is ρ = 1.62 × 10−8 Ω m, estimate
the average time between two collisions:
me
τ=
ne2 ρ
2. Fermi Energy for Different Planes in FCC Crystal
(a) Consider an FCC crystal of side a, assuming two conduction electrons per atom.
Calculate the Fermi energy for the (111) plane and compare it with that for the
(100) plane.
4
(b) Use the fact that the number of atoms per unit volume in FCC is a3
, and electron
density n = a83 , then compute:
ℏ2 2/3
EF = 3π 2 n
2m
1
3. Thermodynamic Properties of Electron Gas
(a) Derive the relation connecting the pressure P and volume V of an ideal electron
gas at T = 0 K:
2U
P =
3V
(b) Show that the bulk modulus of the electron gas is:
dP 10 U0
B = −V =
dV 9 V
(c) Given the density of atoms in sodium is 2.53×1022 cm−3 , compute the bulk modulus
using the free electron model.
4. Energy Levels in a Quantum Box
Calculate the energy of an electron in the first excited state in a cubic potential box of
side L = 1 Å:
ℏ2 π 2 2
Enx ny nz = (n + n2y + n2z )
2mL2 x
Find the temperature at which the average energy of a classical ideal gas equals this
energy level:
3
kB T = ∆E
2
5. Fermi Energy of Liquid 3He
1
The 3 He atom has spin 2
and is a fermion.
• Given the density of liquid 3 He near absolute zero is 0.081 g cm−3 , calculate the
Fermi energy EF and the Fermi temperature TF .
ρ ℏ2 EF
n= EF = (3π 2 n)2/3 , TF =
mHe 2m kB
6. Hall Coefficient and Carrier Properties in Silicon
• The Hall coefficient of a silicon sample is measured as:
RH = −7.35 × 10−5 m3 C−1
over the temperature range 100–400 K. Determine the type of semiconductor.
• Given electrical conductivity σ = 200 Ω−1 /m, calculate the charge carrier density n
and mobility µ:
1 σ
n= , µ=
|eRH | ne