GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
GBPC-W GBPC
• UL recognition file number E54214
~
• Universal 3-way terminals: snap-on, wire
wrap-around, or PCB mounting
~
• Typical IR less than 0.3 μA
• High surge current capability
~ • Low thermal resistance
~
~ • Solder dip 260 °C, 40 s
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
~ General purpose use in AC/DC bridge full wave rectification
for power supply, home appliances, office equipment,
industrial automation applications.
PRIMARY CHARACTERISTICS
IF(AV) 12 A, 15 A, 25 A, 35 A MECHANICAL DATA
Case: GBPC, GBPC-W
VRRM 50 V to 1000 V
Epoxy meets UL 94 V-0 flammability rating
IFSM 200 A, 300 A, 300 A, 400 A
Terminals: Nickel plated on faston lugs or silver plated on
IR 5 μA wire leads, solderable per J-STD-002 and JESD22-B102.
VF 1.1 V
E4 suffix for consumer grade. Suffix letter “W” added to
indicate wire leads (e.g. GBPC12005W).
TJ max. 150 °C
Polarity: As marked, positive lead by belevled corner
Mounting Torque: 20 inches-lbs. max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
GBPC12, 15, 25, 35
PARAMETER SYMBOL UNIT
005 01 02 04 06 08 10
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
GBPC12 12
Maximum average forward rectified GBPC15 15
IF (AV) A
output current (Fig. 1) GBPC25 25
GBPC35 35
GBPC12 200
Peak forward surge current single GBPC15 300
sine-wave superimposed on rated load IFSM A
GBPC25 300
GBPC35 400
GBPC12 160
Rating (non-repetitive, for t greater than GBPC15 375
I2t A2s
1 ms and less than 8.3 ms) for fusing GBPC25 375
GBPC35 660
RMS isolation voltage from case to leads VISO 2500 V
Operating junction storage temperature range TJ, TSTG - 55 to + 150 °C
Document Number: 88612 For technical questions within your region, please contact one of the following: [Link]
Revision: 28-Mar-11 DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link] 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST GBPC12, 15, 25, 35
PARAMETER SYMBOL UNIT
CONDITIONS 005 01 02 04 06 08 10
GBPC12 IF = 6.0 A
Maximum instantaneous GBPC15 IF = 7.5 A
VF 1.1 V
forward drop per diode GBPC25 IF = 12.5 A
GBPC35 IF = 17.5 A
Maximum reverse DC current at rated TA = 25 °C 5.0
IR μA
DC blocking voltage per diode TA = 125 °C 500
Typical junction capacitance per diode 4 V, 1 MHz CJ 300 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
GBPC12, 15, 25, 35
PARAMETER SYMBOL UNIT
005 01 02 04 06 08 10
GBPC12 to GBPC25 1.9
Typical thermal resistance RJC (1) °C/W
GBPC35 1.4
Notes
(1) With heatsink
(2) Bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
GBPC1206-E4/51 15.79 51 100 Paper box
GBPC1506-E4/51 15.79 51 100 Paper box
GBPC2506-E4/51 15.79 51 100 Paper box
GBPC3506-E4/51 15.79 51 100 Paper box
GBPC1206W-E4/51 13.8 51 100 Paper box
GBPC1506W-E4/51 13.8 51 100 Paper box
GBPC2506W-E4/51 13.8 51 100 Paper box
GBPC3506W-E4/51 13.8 51 100 Paper box
[Link] For technical questions within your region, please contact one of the following: Document Number: 88612
2 DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link] Revision: 28-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
40 1000
Bridges Mounted on TJ = TJ Max.
0.5 ms Single Sine-Wave
Peak Forward Surge Current (A)
35 9.5 x 3.5 x 4.6"
Average Forward Current (A)
(22.9 x 8.9 x 11.7 cm)
30 AL, Finned Plate
GBPC35
25 5 x 6 x 4.9"
AL, Finned Plate
20 5 x 4 x 3" 100
AL, Finned Plate
15
GBPC12
6 x 2.2 x 2.2"
10 AL, Finned Plate GBPC15
60 Hz GBPC25
5 Resistive or
Inductive Load 1.0 Cycle
0 10
0 25 50 75 100 125 150 175 200 1 10 100
Case Temperature (°C) Number of Cycles at 60 Hz
Fig. 1 - Maximum Output Rectified Current Fig. 4 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
40 100
GBPC35
60 Hz
Instantaneous Forward Current (A)
RthSA = 0.5 °C/W TA = 150 °C
35 Resistive or
Average Forward Current (A)
Inductive Load
30 TA = 125 °C
GBPC25
RthSA = 0.5 °C/W 10
25
20 TA = 100 °C
GBPC15
RthSA = 1.0 °C/W TA = 25 °C
15
1
10
GBPC12
5 RthSA = 1.0 °C/W
0 0.1
0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Ambient Temperature (°C) Instantaneous Forward Voltage (V)
Fig. 2 - Maximum Output Rectified Current Fig. 5 - Typical Instantaneous Forward Characteristics Per Diode
80 1000
Average Power Dissipation of Bridge (W)
TA = 150 °C
Instantaneous Reverse Leakage
70
Capacitive Load
TA = 125 °C
60 100
TA = 100 °C
Current (µA)
50 TJ = TJ Max.
40 10
Resistive or
30
Inductive Load
20 1
TA = 25 °C
10
0 0.1
0 10 20 30 40 0 10 20 30 40 50 60 70 80 90 100
Average Output Current (A) Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Power Dissipation Fig. 6 - Typical Reverse Leakage Characteristics Per Diode
Document Number: 88612 For technical questions within your region, please contact one of the following: [Link]
Revision: 28-Mar-11 DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link] 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
1000 1000
TJ = 25 °C
Transient Thermal Impedance (°C/W)
TJ = 25 °C
f = 1.0 MHz
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
Vsig = 50 mVp-p
100
100
10
10 1
1 10 100 0.01 0.1 1 10 100
Reverse Voltage (V) t - Heating Time (s)
Fig. 7 - Typical Junction Capacitance Per Diode Fig. 8 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
GBPC-W GBPC
1.135 (28.8) 1.135 (28.8)
Hole for Hole for
#10 Screw 1.115 (28.3) #10 Screw 1.115 (28.3)
0.220 (5.59) 0.220 (5.59) 0.672 (17.1)
DIA. DIA.
0.200 (5.08) 0.732 (18.6) 0.24 (6.0) 0.200 (5.08)
0.632 (16.1)
0.692 (17.6) 0.18 (4.6) AC
1.135 (28.8) 0.732 (18.6) 0.672 (17.1) 0.582 (14.8)
1.115 (28.3) 0.692 (17.6) 0.632 (16.1) 0.542 (13.8)
1.135 (28.8)
1.115 (28.3)
0.034 (0.86)
0.50 (12.7) 0.030 (0.76)
0.24 (6.0) 0.470 (11.9) 0.44 (11.7) 0.732 (18.6)
0.18 (4.6) 0.430 (10.9) 0.692 (17.6)
0.094 (2.4)
0.042 (1.07) DIA. 0.25
0.038 (0.97) 0.034 (0.86) (6.35)
DIA.
1.25 0.030 (0.76)
(31.8)
MIN. 0.840 (21.3)
0.310 (7.87) 0.740 (18.8)
0.310 (7.62)
0.290 (7.36)
0.290 (7.36)
[Link] For technical questions within your region, please contact one of the following: Document Number: 88612
4 DiodesAmericas@[Link], DiodesAsia@[Link], DiodesEurope@[Link] Revision: 28-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT [Link]/doc?91000
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Revision: 12-Mar-12 1 Document Number: 91000
