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GS GD GB: 8 Design of Analog Integrated Circuits and Systems

The document presents nominal SPICE parameters for nMOS and pMOS transistors in a p-well CMOS design, including key metrics such as threshold voltage, transconductance parameters, and capacitance values. It outlines various parameters and their corresponding equations or tables for reference. Additionally, it includes process parameters relevant to the design of analog integrated circuits and systems.

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39 views1 page

GS GD GB: 8 Design of Analog Integrated Circuits and Systems

The document presents nominal SPICE parameters for nMOS and pMOS transistors in a p-well CMOS design, including key metrics such as threshold voltage, transconductance parameters, and capacitance values. It outlines various parameters and their corresponding equations or tables for reference. Additionally, it includes process parameters relevant to the design of analog integrated circuits and systems.

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8 DESIGN OF ANALOG INTEGRATED CIRCUITS AND SYSTEMS

TABLE 1-1 NOMINAL SPICE PARAMETERS FOR A MOST (p-WELL CMOS)

Equation
or Table
Type nMOS pMOS Dimension Name number

Level 1
VTO 0.6 -0.77 V Zero bias threshold voltage Eq. 1-6a
KP 4.0E-5 1.5E-5 A/V2 Transconductance parameter Eq. 1-9d
GAMMA 0.92 0.54 V1/2 Bulk threshold parameter Eq. 1-4a
LAMBDA 0.022 0.047 v-i Channel length modulation
parameter Eq. 1-24a
CGSO 5.2E-10 4.0E-10 F/m GS overlap capacitance
per meter channel width Table 1-6
CGDO 5.2E-10 4.0E-10 F/m GD overlap capacitance
per meter channel width
CGBO F/m GB overlap capacitance
per meter channel width
CJ 4.5E-4 3.6E-4 F/m2 Zero bias junction capacitance
MJ 0.5 0.5 — Grading coefficient
CJSW 6E-10 6E-10 F/m Zero bias junction
sidewall capacitance
MJSW 0.33 0.33 — Grading coefficient
PB 0.6 0.6 V Bulk junction potential Eq. 1-3b
FC 0.5 0.5 — Coefficient forward bias depletion Table 2-4
capacitance
JS 1E-3 1E-3 A/m2 Bulk junction saturation current Eq. 1-35
TPG 1.0 -1.0 4-- Type of gate Eq. 1-6b
LD 3.2E-7 3.2E-7 m. Lateral diffusion Eq. 1-21 a
RSH 20 50 n/D Sheet resistance diffusion of
D and S Eq. 1-36
RS 15 20 Q Ohmic source resistance Eq. 1-36
RD 15 20 R Ohmic drain resistance Eq. 1-36
IProcess parameters
TOX 5.2E-8 5-2E-8 hi Oxide thickness Eq. 1-1 b
PHI 0.60 0.60 V Surface potential (2<f>p) Eq. 1-6d
NSUB 4.6E15 2.5E14 cirr3 Substrate doping Eq. 1-3b
NSS 5E10 5E10 cm-2 Effect of surface charge (Qox) Eq. 1-6a
Added for Level 2
NFS 5E10 9E10 cm-2 Effect of fast surface states Eq. 1-5Ö
UO 500 200 cm2/V Surface mobility Eq. 1-38a
UCRIT 1E6 5.2E4 V/cm Critical field for mobility Eq. 1-38a
degradation
UEXP 0.01 0.17 — Critical field exponent Eq. 1-38a
UTRA 0.5 0.5 — Transverse field coefficient Eq. 1-38a
VMAX 1.0E5 1.0È5 cm/s Maximum drift velocity Eq. 1-38a

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