4N35X, 4N36X, 4N37X,
4N35, 4N36, 4N37,
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS Dimensions in mm
2.54
z UL recognised, File No. E91231
Package System " GG " 1 6
7.0
'X' SPECIFICATION APPROVALS 6.0 2 5
z VDE 0884 in 3 available lead forms : - 3 4
- STD
1.2
- G form
- SMD approved to CECC 00802 7.62 7.62
z
6.62 4.0
3.0
DESCRIPTION 0.5 13°
Max
3.0
The 4N35, 4N36, 4N37 series of optically 0.26
coupled isolators consist of infrared light 0.5 3.35
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
ABSOLUTEMAXIMUMRATINGS
FEATURES (25°C unless otherwise specified)
z Options :-
10mm lead spread - add G after part no. Storage Temperature -55°C to + 150°C
Surface mount - add SM after part no. Operating Temperature -55°C to + 100°C
Tape&reel - add SMT&R after part no. Lead Soldering Temperature
z High Current Transfer Ratio (100% min.) (1/16 inch (1.6mm) from case for 10 secs) 260°C
z High Isolation Voltage (5.3kVRMS ,7.5kVPK )
z All electrical parameters 100% tested INPUTDIODE
z Custom electrical selections available
Forward Current 60mA
Reverse Voltage 6V
APPLICATIONS Power Dissipation 105mW
z DC motor controllers
z Industrial systems controllers
z Measuring instruments OUTPUT TRANSISTOR
z Signal transmission between systems of
different potentials and impedances Collector-emitter Voltage BVCEO 30V
Collector-base Voltage BVCBO 70V
Emitter-collector Voltage BVECO 6V
OPTION SM OPTION G Collector Current 50mA
SURFACE MOUNT 7.62 Power Dissipation 160mW
POWER DISSIPATION
0.6 1.25
0.1 0.75 0.26 Total Power Dissipation 200mW
10.46 (derate linearly 2.67mW/°C above 25°C)
9.86 10.16
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25
17/7/08
DB90046
Downloaded from [Link].
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Current (IR) 10 μA VR = 6V
Output Collector-emitter Breakdown (BVCEO) 30 V IC = 1mA
( Note 2 )
Collector-base Breakdown (BVCBO) 70 V IC = 100μA
Emitter-collector Breakdown (BVECO) 6 V IE = 10μA
Collector-emitter Dark Current (ICEO) 50 nA VCE = 10V
Coupled Current Transfer Ratio (CTR) 100 % 10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE(SAT) 0.3 V 10mA IF , 0.5mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 Ω VIO = 500V (note 1)
Output Rise Time tr 2 μs VCC = 5V , IF= 10mA
Output Fall Time tf 2 μs RL = 75Ω ( FIG 1)
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
VCC
Input ton toff
RL = 75Ω
Output tr tf
Output
10% 10%
90% 90%
FIG 1
17/7/08 DB90046m-AAS/A5
Downloaded from [Link].
Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage
200
50 TA = 25°C
Collector power dissipation PC (mW)
50
Collector current IC (mA)
150 40
30
20
30
100 15
20 10
50
10 IF = 5mA
0 0
-30 0 25 50 75 100 125 0 2 4 6 8 10
Ambient temperature TA ( °C ) Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature Collector-emitter Saturation
Collector-emitter saturation voltage VCE(SAT) (V)
Voltage vs. Ambient Temperature
80 0.14
70 0.12
IF = 10mA
Forward current IF (mA)
60 0.10 IC = 0.5mA
50
0.08
40
0.06
30
0.04
20
10 0.02
0
-30 0 25 50 75 100 125 -30 0 25 50 75 100
Ambient temperature TA ( °C ) Ambient temperature TA ( °C )
Relative Current Transfer Ratio Relative Current Transfer Ratio
vs. Ambient Temperature vs. Forward Current
1.5 1.4
Relative current transfer ratio
Relative current transfer ratio
IF = 10mA
VCE = 10V 1.2
1.0
1.0
0.8
0.6
0.5
0.4 VCE = 10V
TA = 25°C
0.2
0 0
-30 0 25 50 75 100 1 2 5 10 20 50
Ambient temperature TA ( °C ) Forward current IF (mA)
17/7/08 DB90046m-AAS/A5
Downloaded from [Link].
