Semiconductor Diodes 27
or An, =n,e ..(15)
The total current across the
junction is
i-JA .(16)
where Ais the junction area and J is the current
The current density is given by density.
J=e(an,v, +Ap,v) ...(17)
Using equation (16) we get
i=Ae(An,v, +Ap,v, )
or i= Ae(n,v, +P,,)e ..(18)
eV
or i=1, ...(19)
This is junction diode equation and I is the reverse saturation current.
eVB
1, =Ae(n,v, +P,Y, Je KT
..(20)
Equation (19) also gives the current for step junction.
1.14 BARRIER POTENTIAL AND BARRIER WIDTH
Consider astep junction with uniform doping concentration in each regions (P-region
and N-region). Let the depletion region abruptly ends in the N-region at x = +x, and
abruptly ends in the P-region at x =- x,.
According to Poisson's equation
p(x) ..(1)
dx?
where Vis the electric potential, p(x) is the volume charge density at distance xfrom the
juction and e is the permittivity of the semiconductor.
The space charge density in the step junction is shown in the figure 1.26.
P P(X)
N
teNp
+x,
Fig -1.26 : Space charge density in the step junction.
28
Analog Electronics
extending a
Let us density donor atom N,
+x, into the
the
assume that there
N-region and
is a uniform
a uniform density acceptor atom N,
extending a distainto
distace -X, nce
P-region. Let the densities offelectrons and holes (n andp) are negligible in the
region. depletion
In the N-region of depletion layer
e N, -..(2)
dx?
where O0 <x<x,
In the P-region of depletion layer
dx? eNa ..(3)
where X, <x <0
The electric field in the depletion region of astep junction i.e., uniformly doped PN.
junction is shown in the figure-1..27. The electric field is created in the depletion region by
separation of positive and negative space charge
E(x)
tx,
a step junction.
Fig :1.27 - Electric field in the depletion region of
Using equation (2) we get
dV eNp
dx dx
(dV
or d
dx
Integrating both the sides we get
dV
dx
dV e Npx ...(4)
Or +C
dx
Semiconductor Diodes
where C, is a constant of integration. 29
Using equation (3) we get
d dV eN
dx dx
dV
or d
dx
Integrating both the sides we get
dy e N C
or
dx
...(5)
where C, is a constant of
The potential is uniform atintegration.
the boundaries.
.:. At x =+ x, and x=- x,.
dy
=)
dx
Using equation (4) we get
eNp1 +C =0 when x =+ x,
or C= eNpx1
.(6)
Using equation (5) we get
eNx +C, =0 when x = - X,
or C, =eN
.(7)
Electric field is defined as the negative of potential
gradient.
dV
: E, (x)= dx
dV
Putting the value of from equation (4) we get
dx
or E, (x)=NpC.
or E, (x)= NoX_eNgx,
30
Analog Electronics
..(8)
or E,(x)=(x-)
dV
Similarly. E,(x)= dx
dy
Putting the value of from cquation (5) we get
dx
E,(x)=eNx
-C
or E, (x)=eNx eN,x,
E
...(9)
or E,(x) =NA(x+x;)
P-region hence the electric field
Since x is positive in N-region and negative in
increases in each region asx approaches to zerO.
Since the charge is conserved.
Nx, = ,
At x= 0
eNpx; eNx ...(10)
E, (0) = E, (0) =E, =
The electric potential through the depletion region of a uniformly doped PN junction (step
junction) is shown in the figure 1.28.
X
+x,
depletion region of a step junction.
Fig : 1.28 - Electric Potential through the
The potential in the N-region is
V.(x)=-[E, (x) dx
Putting the value of E. (x) from equation (8) we get,
V. (x)=-f(x-x )dx
Semiconductor Diodes 31
eNx
or V, (x)=- 2¬
+
+C, ..(11)
where C, is a constant of integration.
The potential in the P-region is
v,(«)=-8, (*)d
Putting the value of E,(*) from equation (9) we get,
y,(«)=fx+*,Jda«
eN, x
or V,(x)= 2¬
+
eNX+C.
where C, is a constant of integration
..(12)
At x =+ x,, V(x) = V
where V, is the barrier potential.
Using equation (11) we get
eN,xi eN,x +C,
2e
or VB eN,Xi +C, .(13)
2e
or C, =Va eN,x
2e
...(14)
Using equation (11) we get
eNpx' eNpX,x eN,x
V.(x)= 2e 2¬
-+ Va
or V, (x)= eNp ...(15)
e2 2
At x =- X,, V(x) =0
Using equation (12) we get
0= eNX_
2e
eN,XË-+C4
or 0= eNX
2¬
+CA
or C, = eNx;
...(16)
Analog. Electronics
32
Using equation (12) we get
V, (x)= eN,x, 4
cN,x
2¬ 2e
or
V,(x) eN,
..(17)
v,(x) -V,(x) at x=0.
Dince the electric potential is continuous at x= 0. hence
V, (0) = V,(0)
Or eN,x + Va= eN,x;
2¬ 2¬
V, CNXí eN,x
2e 2e
or
e
Ya(Nx;+ N,xi) ..(18)
step junction.
This is expression for barrier potential or junction potential of a
Using equation (18) we can get
V¡ = 1+ N,x;
2e N,x?
or N, NG)Ni
2el N, N xË NË
V,
= 2e
+N, NGxi
N +Np
V=
2e N, Noxi
2e N,VB
x=
e(N, + N,)N,
or
2eN,VA ...(19)
X=
Ve(N, +N,)ND
Again using cquation (18)we get
VA =
Nx;
33
Semiconductor Diodes
N, NA x N
or V, = |+
2¬ N, N N
or V =
2e Np
or V -
No +NA
2el Np
2e N, V
or x;= e(N, +ND)N,
2e N,V, ...(20)
Ve(N, +N,)N,
The barrier width is given by
W= x, + X,
2e N, V, 2e NV
W =
Ve(N, +N)N, Ve(N, +N)N,
W=. 2eN?V, +2e N;V,
Je(N, +N)N, No
W=
J2e V, (N +ND)
Je(N, +NG)N,N,
or W=
2e V (N, +N,)
e N,N, ...(21)
This is the expression for barrier width or depletion width of a step junction.
SOLVED EXAMPLES
1. Find the resistivity of a sample of N germanium at 300 K having donor density
N, = 1020 atoms m.
Ans : In N germanium electron density is much larger than hole density
.. n>>p
’o=neu, and n=N
34 Analog Electronics
For germanium , 038
d 10" 16 10 " 038
6 08 ohm m
The resistivity is given by
6 08
0164 ohm m
2. Find the donor density and hole density in an Ngemanjum crystal with a resistivity
of 0.1 ohm.m at 300 K.
1 1
Ans : -ncu, = ohm 'm
0.1
n=N=
c,
or Np= , 0.38
L.6× 10 x0.38 x0.1
or N, -L,64× 10 clectrons m
n
Now p
N
For germanium n 6.25 x 10*
6.25 x 10
1.64 × 1020
or p 3.81 × 10i* holes m
saturation current for a PN - junction Ge diode is 10 uA at
3. The reverse the junction to obtain a
is the voltage to be applied across
300K. What
forward current of 100 mA.
Ans : I=1, e -1
Now 1 10 uA 10 ×10A, T =300 K
| 100 mA =100 10 A
Semiconductor Diodes 35
ekt
100×10
+|=10'+|10
or
eV
- log, 10'
kT
kT -log,10
of
1.38x 10 x300 x 2.303x 4
V=
Or
L.6x10-19
Where k= 1.38 x102" JK
.. V=0.238 Volt.
4,
Find the static resistance of a junction diode if 50 MA current ows through it for a
forward voltage of 2 volt at 300 K.
Ans : I= 50 mA = 50 x 10A
V=2volt
Static resistance of the diode is
2
of Le
50x10-3
or r, = 40ohm
5. Find the voltage for which the reverse current in a germanium junction diode is half
of the saturation current at 300K.
Ans :
Or
36 Analog Electronics
1
2
eV
or
kT log.
KT
or V=log. (0.5)
or V= 1.38x10x300
l.6x10-19 x2.303x logo (0.5)
or V=- 17.9 x 103 volt
or V=- 17.9 mV.
SUMMARY
conductors and
Semiconductors are the materials having resistivity in between
insulators.
than a
conductivity of a semiconductor is more than an insulator but less
Ine
conductor.
temperature coefficient of resistance of semiconductors is negative.
Ine are
" At low temperature, semiconductors are insulators but at high temperature they
good conductors.
conductivity of semiconductors can be increased appreciably by adding a suitable
" The
metallic impurity.
" All semi-conductors have crystalline structure.
empty conduction band
Semiconductors have almost filled valence band and nearly
with a very small band gap of leV.
representing the energy of different orbits of an
" Energy level diagram is the diagram
atom.
orbit of an atom in solid is known as
The range of energies of an electron in any
energy band.
by valence electrons.
" Valence band consists of the range of energies possessed
conduction electrons.
" Conduction band consists of the range of energies possessed by
conduction band on the
Forbidden band is the separation between valence band and
energy band diagram.
. Forbidden band is also known as band gap or energy gap
" Intrinsic semiconductors are the semiconductors in pure form.
