Contents
[Link] and type
[Link]
2.1 Its Basic structure Mechanism of transis~or
2.2 Minority carrier concentration in a transistor
2,3 Region of operation
2.4 Transistor connection
2.5 Transistor biasing
2.6 BJT Load line
1. Transistor & Type
• A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power.
• It is composed of semiconductor material with at least three terminals fo r connection to an external
circuit.
Transistor
BJT (Bipolar) FET (Unipolar)
n-p-n p-n-p
JFET MOSFET
2 · 81 Pol(~1 Junction transist or (BJT)
' It 15 a three terminals current controlled active device. It is called Bipolar as it lies on the two types of charge
carriers
' BJT consist of a Si (or Ge) crystal in which a layer of n type Si (or Ge) is sandwiched between two layer of P
type Si (or Ge) called p-n-p TransiSt0 r · Alternatively, a Transistor may also consist of a layer of p type Si (or
Ge) sandwiched between two layer of n type Si(or Ge) called n-p-n Transistor.
Simplified physical structure
............. ...°""""'.... [Link]
----K}----e---t>f--
- ► Device is constructed such that
p-ryp< [Link]"'-1
[Link]'t C"llt.·\.'tur
!Ci
BJT does NOT act as two
HI
diodes back to back (when
voltages are applied to all
three terminals).
2.1 Mechanism of Transistor
• The forward -biased junction that injects holes
into the center N- region is call ed the emitter I
h
w
junction .
,,, (!-
• The reverse-biased junction th at collects the (j'i
injected holes is called the coll ector junction.
~ l luk· er
p
• The p+ region, which serves as t he source of
injected holes, is called the emitter.
• the p-region into which the holes are swept by
the reverse-biased junction is called the
collector. The center n-region is called the
base .
2.2 Minority c . .
arner concentration in a transistor
Base Coliwor
II [>
Em,uer
,. ~s th ~ Potential barrier at the emitter base p
Juncti~n is_lowered due to forward biasing
th e Minority carrier concentration across it
increases.
,. As the doping of emitter is much higher the
minority carrier injected into the base is
much higher and p is much higher than n
n ~
Pn
► As the collector base junction is reverse bias
the minority concentration across this
junction is lowered -
E-B space
charge region
B-Cspace
charge region
. tributions in the emitter and
(a) Electron d15
collector
2.3 Region of BJT Operation
ii) Cut-off region : Both emitter junction and collector junction are in reversed
bias i.e. The transistor is off. There is no conduction between the collector
and the emitter. (Is= 0 therefore le= O)
ii) Active region .
&E ]Unction Is lvrwan1 biased
t1·~, v,.11
r---- --- ~~ d a large number of
As emitter Is heavily dope ' (only a small
elfflro ns diffuse Into the base
The tran515tor 1s on. The fraction combine with holes)
r-- --- .1 ,,
collector current is The number of these electrons scales as e
proportional to and
controlled by the base , If the base 1s "thin" these electrons get
current (le= ~Is) and near the depletion region of BC Junction
and are swept Into the collector if Ven ,! 0
relatively insensitive to VcE, (uB<' $ 0 : BC Junction is reverse biased I)
In this region the transistor
can be an amplifier. r--Actlve
:-- --- -
•
..•M ,, = l \e'v ,,
" In this Picture , i, 1s independent of t·1K·
made:
,,. I (a nd ur6 I as long as
1s =- = -1. e'·-, ', = \'Bf
fJ fJ V BC - 1•
0
= J'00 - Vu ~0
ic== l i e\u l , VCF ~ Vno
Va~ Voo
► Base current is also proportional to
e" • i, d
an therefore, •c : 'n= irlp
l Satu ratio n regio n : The transistor is on. The collec tor curre
nt varies very little with a change in the base
v
satur ation region. The cc is small, a few tenths current in the
of a . volt. The collec tor curren t is strong
active region. It is desirable to operate transis
tor switc hes in or near the saturation region
ly dependent on CE unlike in the v
when in their on state.
BE junct ion is forward biased
• ( u HJ,; = v,J()l
Simil ar to the active mode , a large numb
er of
electr ons diffus e into the base.
,.. Fo r u uc ::: 0 BC junct ion is forwa rd
biased
and a diffus ion curre nt will set up, reduc
ing i,.
1. Soft satur ation : un;:: : 0 .3 V (Si)*
um :::: 0.'1 V (Si), diffusion current is small and
ic is very close to its active-mode level.
2 . Deep satur ation regio n: 0 . l < un; <
0.3 V (Si)
o r vn; a: 0 .2 V = V, (Si), ic is smalle
01 r than
its active-mod e IPvel (ic < P i } .
1
o Calle d satur ation as ic is set by outsid
"Deep# Saturation mode · e
I . circu i t & does not respo nd to changes in
itt·
I ~ \ e'to 1,
H /J 3. Near cut-o ff: Un•< ; U. l V (Si)
t, < fl IH Both Le & i II are close to zero
, ., I .., I '"'
• Sedra & Smith includ es this 1n the JCtive
region, 1e'
RIT is ,n ilrt 1vP mnr1P ii< Inn • ii<, , , • 0 :I
V
r
2.4 Transistor connection input characteristics
, , ( 111 , ,
Q c;on.,non ._. Connectiof1
/j
•
(Ill • \ )
R., le
.l 0
.., ~
I:.CJ
a , .s
a:
~ I 0
s
...___ +:....., f-----4-+-. IIII - w o.5
10 20 10 4() 50 1 ·1. B ( m\° )
Voc EMITTER- B A SE V OLTA GE
Output characteristics
-f A
u
i....a---- Acti v e Regi o n
-...
- -50
C
Q)-40
le= 5 0rnA
k ·= ,tomA
a-30 ..-1-- -- - -- - -- ·
11. = .30rnA
If = 20mA
IE = lOmA
r..,.,::..--...L..;:=--:-:;~~::-r-::-=----
Cut o f f regi o n
- - - - - le = OmA
-=--' - - -_-1~ - -_2---=-_;;__:....
_3..::;-- -_...,.
4- -.-::scr---_-&,--- - -·>
Collector Base Voltage Vea (Volt)
tVOC
ls([Link])
4
89111 3
OU~
c, ~
--r
2
~~
,~
,,
~"'1 I
.,. ,, ,
,
Cf 0 0 .7 1.4 2.1 V
BE;(VOLTSJ
-er
°"
Output characteristics
le Saturation Mode
mA ( Active Mode
le= 8 0 1,1A -
80
le= 60 1,1A
60
lu = 40 µA
40
20 -------------= -- ie a a1A Cutoff Mode
---------:::::::::----
VcE
I) Common tolltctor connection
..,.....,
•
+
..
v.
T
+
H· lll
1 vocM
I Voc • 2
~
4 6
aaw-collKtor vol!•g•
Input characteristics
Output characteristics
l..t-"' Acti ve Region
0
...-C -so IE = SOmA
Q)-40 IE= 40mA
a..
a..
a-30 IE= 30mA
IE= 20mA
le= lOmA
_ _.._c=-u-:--t-:--of=--=-f-re-g - , - i o - n - - - - - lE = OmA
....;..&....-----:__.__----:r_-;;rl--;-----:----:--- - )
-1 -2
1
-3 .4 -5 -6
Collector Base Voltage Vcs (Volt)
2 5 Transistor b1as1ng circuit
I) Emitter feedback bias
• An Increasing in the collector current
Produces an increase in the voltage across the
emitter resistor, which reduces the base
current consequentlY the collector current.
• The emitter Resistor serves as the Feedback
element. If we adding voltage as a collector
th en we get Vee+ leRe+ l,R,- Vee =O
EmltterF~
....
Since, IE ""le, we get
I c :::::: Vee - VCE
If we adding th e volta Re; + R E
I g e s a r o und
ERE + V. the base l o
Since, I - BE + I BRB - V: op, we get
E ~ Jc and I cc = O
IB = _ £
f3oc ' we get
I c -- Vee -[Link]
- R E+ R B
f3 o~
Ii) Collector Feedback Bias (self Bias) . s for the transistor. !f'e
• This biasing method Which requires two resistors to provide the necessa rY ysocbiase
1
b a d 1•n the active region
collector to base feedback configuration ensures that the transistor is alwa
regardless of the value of Beta (P).
■ The collector current which is less than Vcc/Re
Hence the transistor can't be saturated. le+ le
Re
IVe= Va:.- Rc{lct-la}
. Ve= Ov
Is
Ra
Ve Ii =
Va= Vee
8 Ve· Ve
Re
le le= ~(CQie
~ (OC1
~~ =(le+ la) [Link]
VN Va
+
f~
iii) Voltage Divider Bias
■ . . known as voltage divider bias because of the voltage d'[Link] formed by Ra,. and Ra2.
The c1rcu1t
■ The voltage across Rs2 forward biases the emitter diode_
Vee
If Re fs small enouah, the t,ase vottaaa, Is appro,ctmaty 11.-0. 'the ~ - - emitter'
resister Is Va•Vu .
Re
. Ja) (b) -VEE
~ fig. (a)· Emitter bias circuit (bl Equivalent cirCUit
2.6 BJT Transfer Function on the Load line
v" l
R, ~
Saturation : V111 < v, ',,
-o',,
iH increases but ic unchanged Load Line (CE- KYL)
Ver. = Vee - R e ic
I , ,,
~
R•
tJ
, ., l
eut-off
' I
2-0
V i•t \"
~'•/
I
8 " C£ (V ) 10 ''""
C' flt - uff ucnrr ..,.,.,.,.
Active : V00 :5 v, :5 V111
C ut - off :
111 & 11 increase together
.,
/
