Semiconductor Physics

Chapter 4 : Bipolar Junction

Transistor

Prof. Sunil Nagare : 9619015411

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BJT : Bipolar Junction Transistor
Structure
• A Bipolar Junction Transistor (BJT)
is a semiconductor device that
consists of three layers of doped
semiconductor material.
• It has three terminals: the base,
the collector, and the emitter.
• BJTs are classified into two types:
NPN and PNP, based on the
arrangement of the
semiconductor layers.
Prof. Sunil Nagare : 9619015411 [Link] (VJTI) & [Link] (SPIT)
BJT : Bipolar Junction Transistor
Structure of NPN
• Emitter (E): Heavily doped n-
type semiconductor region.
• Base (B): Lightly doped p-type
semiconductor region.
• Collector (C): Moderately doped
n-type semiconductor region.

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 BJT : Bipolar Junction Transistor
Operation of an NPN Transistor:
• The operation of an NPN transistor can be understood by considering the
biasing of its two junctions: the base-emitter junction (BEJ) and the base-
collector junction (BCJ).

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 BJT : Bipolar Junction Transistor
Forward Bias:
• When the BEJ is forward-biased, a majority carrier (electrons) current flows
from the emitter to the base.
• A small portion of these electrons recombine with holes in the base region.
• The remaining electrons, due to the narrow base width, diffuse across the
base and are attracted to the collector by the reverse-biased BCJ.

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 BJT : Bipolar Junction Transistor
Reverse Bias:
• The BCJ is reverse-biased, which creates a strong electric field that attracts
the majority carriers (electrons) from the emitter across the base region.
• This reverse bias also prevents the flow of majority carriers (holes) from the
collector to the base.

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 BJT : Bipolar Junction Transistor
• Emitter Current (IE): The total current flowing into the emitter.
• Base Current (IB): The small current flowing into the base.
• Collector Current (IC): The current flowing out of the collector.
• The relationship between these currents is given by: IE = IB + IC
Amplification:
• The BJT can be used as an amplifier because a small change in the base
current (IB) can produce a large change in the collector current (IC).
• This current gain is typically denoted by the symbol 'β' (beta).
β = IC / IB
• Applications of BJTs: Prof. Sunil Nagare : 9619015411
Amplifiers, Switches, Oscillators & Logic gates [Link] (VJTI) & [Link] (SPIT)
BJT : Modes of Operation
• A Bipolar Junction Transistor (BJT) operates in different modes
depending on the biasing of its junctions.
• A BJT has three terminals: Emitter (E), Base (B), and Collector (C), and
two junctions:
1. Emitter-Base Junction (EBJ)
2. Collector-Base Junction (CBJ)
• The behavior of a BJT depends on how these junctions are biased
(forward or reverse). There are four modes of operation:

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BJT : Modes of Operation
1. Active Mode (Amplification Mode)
✅ EBJ: Forward-biased
✅ CBJ: Reverse-biased

• This is the most common mode used in amplification.

• The transistor allows current flow from the collector to the emitter,
controlled by the base current.
• The collector current is proportional to the base current (IC = β IB).
• Application: Amplifiers, signal processing.

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BJT : Modes of Operation
2. Cutoff Mode (Transistor OFF)
❌ EBJ: Reverse-biased
❌ CBJ: Reverse-biased

• No significant current flows, as both junctions are reverse-biased.

• The transistor behaves like an open switch.
• Application: Used in digital circuits (logic "0"), switching circuits.

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BJT : Modes of Operation
3. Saturation Mode (Transistor Fully ON)
✅ EBJ: Forward-biased
✅ CBJ: Forward-biased

• The transistor allows maximum current flow from collector to emitter.

• The voltage drop across the collector-emitter (VCE) is very low (~0.2V).
• The transistor behaves like a closed switch.
• Application: Used in digital circuits (logic "1"), switching applications
(e.g., motor control, relays).

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BJT : Modes of Operation
4. Reverse-Active Mode (Rarely Used)
❌ EBJ: Reverse-biased
✅ CBJ: Forward-biased

• The transistor operates in reverse, meaning the emitter and collector

roles are swapped.
• Very low gain (β) compared to normal active mode.
• Application: Not commonly used, but may occur in some special
circuits or during failure conditions.

Prof. Sunil Nagare : 9619015411 [Link] (VJTI) & [Link] (SPIT)

BJT : Modes of Operation

Prof. Sunil Nagare : 9619015411 [Link] (VJTI) & [Link] (SPIT)

BJT : Modes of Operation

Prof. Sunil Nagare : 9619015411 [Link] (VJTI) & [Link] (SPIT)

BJT Configuration: Common Base
• In the CB configuration, the Base terminal is common to both the input and
output circuits.
• The input signal is applied between the Emitter and Base, and the output is
taken between the Collector and Base
Characteristics:
Current Gain: Less than 1 (typically around 0.98 to 0.99).
• This means the output current is slightly smaller than the input current.
Voltage Gain: High.
• The output voltage is much larger than the input voltage.
Input Impedance: Low.
• The CB configuration has a low resistance to input signal.
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BJT Configuration: Common Base
• Output Impedance: High. The CB configuration has a high resistance
to the output signal.
• Phase Shift: 0 degrees. The input and output signals are in phase
(they rise and fall together).

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BJT Configuration: Common Base
Applications:

1) High-frequency amplifiers:
• The CB configuration is often used in radio frequency (RF) amplifiers
due to its good high-frequency response.

2) Impedance matching:
• It can be used to match the impedance between different stages of a
circuit.

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BJT Configuration: Common Emitter
• In the CE configuration, the Emitter terminal is common to both the
input and output circuits.
• The input signal is applied between the Base and Emitter, and the
output is taken between the Collector and Emitter.
Characteristics:
• Current Gain: Medium to high (typically 20 to 200). The output
current is much larger than the input current.
• Voltage Gain: Medium. The output voltage is moderately larger than
the input voltage.
• Input Impedance: Medium. The CE configuration has a moderate
resistance to the input signal.
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BJT Configuration: Common Emitter
Output Impedance:
• Medium.
• The CE configuration has a
moderate resistance to the
output signal.
Phase Shift:
• 180 degrees.
• The input and output signals
are out of phase (when one
rises, the other falls).

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BJT Configuration: Common Emitter
Applications:

1) Voltage amplifiers:
• The CE configuration is widely used in audio amplifiers and
general-purpose amplifiers.
2) Switching circuits:
• It can be used in circuits that turn devices on and off

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 BJT Configuration

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 Common Emitter: Input Characteristics
• The input characteristics describe relationship
between input current or base current (IB) &
input voltage or base-emitter voltage (VBE)
• The input current or base current (IB) is taken
along y-axis (vertical line) and the input voltage
(VBE) is taken along x-axis (horizontal line).
• To determine the input characteristics, the
output voltage VCE is kept constant at zero volts
and the input voltage (VBE) is increased from
zero volts to different voltage levels.
• For each voltage level of input voltage (VBE),
the corresponding input current (IB) is
recorded.
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 Common Emitter: Input Characteristics
• A curve is drawn between input current (IB)
and input voltage (VBE) at constant VCE = 0V.
• Output voltage (VCE) is increased to 10V while
keeping input voltage (VBE) at 0V.
• After setting VCE = 10V, input voltage (VBE) is
increased from 0V to different levels, and
corresponding input current (IB) is recorded.
• A curve is drawn between IB and VBE at
constant VCE = 10V.
• The process is repeated for higher fixed values
of VCE.
• When VCE = 0V, the emitter-base junction
behaves like a PN junction diode.
• Silicon Transistor Cut-in voltage = 0.7V.
• Conclusion: After 0.7V, a small increase in VBE
leads to a rapid increase in IB.
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Common Emitter: Output Characteristics
• The output characteristics describe the
relationship between output current (IC) &
output voltage (VCE ).
• The output current or collector current (IC)
is taken along y-axis (vertical line) and the
output voltage (VCE) is taken along x-axis
(horizontal line).
• To determine the output characteristics,
input current or base current IB is kept
constant at 0 μA & output voltage VCE is
increased from zero volts to different
voltage levels.
• For each level of output voltage,
corresponding output current (IC) is
recorded Prof. Sunil Nagare : 9619015411 [Link] (VJTI) & [Link] (SPIT)
Common Emitter: Output Characteristics
• A curve is drawn between IC & VCE at IB = 0
μA.
• Cut-off Region: When IB = 0 μA, both
junctions are reverse biased.
• Increase IB: Input current IB is increased to
20 μA by adjusting VBE and kept constant.
• Constant VCE = 0V: While increasing IB, the
output voltage VCE remains 0V.
• VCE Variation: With IB = 20 μA constant,
VCE is increased, and IC is recorded.
• Active Region: A curve is drawn between IC
and VCE at constant IB = 20 μA, where
emitter-base junction is forward biased,
and collector-base junction is reverse
biased.
• Repetition: The process is repeated for
higher values of IB (e.g., 40, 60, 80 μA).
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 BJT as an Amplifier
• A Bipolar Junction Transistor (BJT) can be used as an amplifier to increase
the strength of a weak signal.
• The current gain (β) of the transistor plays a crucial role in amplification.
Working Principle
• In an amplifier circuit, the BJT operates in the active region.
• A small base current (IB) controls a larger collector current (IC) due to the
transistor’s current gain (β).
• The output signal is an amplified version of the input signal.

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 BJT as an Amplifier
Current Gain (β) in a Common-Emitter Configuration:
IC = β IB
• β (Beta) is the common-emitter current gain (typically 20 to 1000).
• The ratio of collector current to base current: β= IB/IC
• Since IC is much larger than IB, the transistor amplifies the input signal.

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 BJT as an Amplifier
• Resistors (RB, RC): Used for
biasing and load.
• VBE (Input Voltage): Small
AC signal applied at the base.
• VCC (Supply Voltage):
Provides power to the
circuit.
• Output Voltage (Vout):
Taken across the collector
resistor (RC).

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 BJT as an Amplifier
• A small AC signal is applied
to the base terminal.
• The small base current (IB)
is amplified by β, resulting in
a much larger collector
current (IC).
• The amplified output
appears across the collector
resistor (RC).
• The output voltage is
inverted relative to the
input in a common-emitter
configuration.
Prof. Sunil Nagare : 9619015411 [Link] (VJTI) & [Link] (SPIT)
 BJT as an Switch
• A Bipolar Junction Transistor (BJT) can function as an electronic
switch in digital circuits.
• It operates in two states: ON (Saturation) and OFF (Cut-off).
• The transistor's current gain (β) helps control a large current
(IC) with a small input current (IB).
Working Principle : Two Operating States:
1) Cut-off Region (Switch OFF)
• Base current (IB) = 0, so collector current (IC) ≈ 0.
• The transistor acts as an open switch (No current flows).
• VBE < 0.7V (for silicon transistor).

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 BJT as an Switch
2) Saturation Region (Switch ON)
• A small IB is applied, generating a larger IC.
• The transistor acts as a closed switch (Maximum current flows).
• VBE ≥ 0.7V and VCE ≈ 0.2V

Current Gain (β) in Switching Mode

• The current gain (β) determines how much base current is required
for switching: IC = β IB
• To fully turn ON the transistor, IB is chosen to ensure IC is large
enough.

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 BJT as an Switch
• RB: Base resistor to limit IB.
• RC: Load resistor.
• VCC: Supply voltage.
• VBE: Base-emitter voltage.
• VCE: Collector-emitter voltage.

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 BJT as an Switch
Operation of BJT as a Switch
1) When Input is LOW (0V)→ Transistor OFF
• IB = 0, so IC ≈ 0.
• No current flows through RC → Load is OFF.
• VCE ≈ VCC, transistor behaves like an open switch.

2)When Input is HIGH (≥0.7V) → Transistor ON

• A small IB flows, causing a large IC.
• Current flows through RC → Load is ON.
• VCE ≈ 0.2V, transistor behaves like a closed switch.
Prof. Sunil Nagare : 9619015411 [Link] (VJTI) & [Link] (SPIT)