CHAPTER-4

POWER DEVICES
Adama Science and Technology University
Department of Power and Control Engineering

Introduction to Mechatronics
EPCE-4306
 IDEAL SWITCHES PRACTICAL SWITCHES
• Can withstand any voltage during open
(OFF) state. • Every switches have limited Thermal
limit, current carrying & blocking
• Capable of passing (withstand) any voltage capability.
current while closed (ON) state.
• Always there exist switching loss.
• No Thermal limit (can operate in any
temperature)No power loss during • The transition from one state to other
switching & operation. state (ON↔OFF) is not instantaneous
(it takes some finite time).
• Switches are turned ON & OFF
instantaneously. i.e. time taken to turn
ON & OFF is zero.

Operating point of practical switches

Operating point of Ideal switches due to thermal limit
 CLASSIFICATION
OF
POWER ELECTRONIC
DEVICES
BASED ON THE DEGREE OF CONTROLLABILITY
CONT.
1. Power Diodes
2. Thyristor devices
a) Silicon controlled rectifier (SCR)
b) Static induction thyristor (SITH)
c) TRIAC (Triode ac switch)
d) Gate turn-off thyristor (GTO)
e) MOS- controlled thyristor (MCT)
f) Integrated gated-commutated thyristor (IGCTs)
3. Power transistors
a) Bipolar junction transistor (BJT)
b) Metal oxide semiconductor field effect transistor (MOSFET)
c) Insulated gate bipolar transistor (IGBT)
d) Static induction transistor (SIT)
 DEPENDING ON THE NUMBER OF TERMINALS

• In terms of their number of terminals: Power electronic devices

are divided into two

i. Two-terminal devices (diodes): whose state is completely

dependent on the external power circuit they are connected to.

ii. Three-terminal devices: whose state is not only dependent on

their external power circuit, but also on the signal on their
driving terminal (gate or base).
 BASED ON THE TYPE OF CHARGE CARRIERS

• Depending on the type of charge carriers PE devices are classified

in to two. These are:

a) Majority carrier devices: use only one type of charge carriers

(i.e., either electrons or holes) E.g. Schottky diode, MOSFET,

JFET ..

b) Minority carrier devices: use both charge carriers. E.g. p-n

diode, Thyristor, BJT, IGBT …

FURTHER CLASSIFICATIONS
 DIODE
APPLICATION
CIRCUIT
 POWER DIODES:
• These are two terminal PN junction switches
• It is not controllable and its operating states are determined by the
circuit operating point.
• Here are the symbol, I-V curve & pictures of power diode.
 CONT.

• P type layer is thin & highly doped

• N- layer: is a lightly doped layer which

determines the voltage capacity of the diode.

• N+ layer is a highly doped layer.

❖ width of drift layer determines voltage handling capacity of the diode.

[The higher the drift layer, the higher voltage capacity of diode].
❖ Cross sectional area (over all horizontal width) of the diode
determines current handling capacity of diode. [The higher cross sectional
area of diode, the higher current handling capacity of diode].
 CHARACTERISTICS OF IDEAL DIODES

An ideal diode should have the following characteristics:

• When forward-biased, the voltage across the end terminals of the

diode should be zero, whatever the current that flows through;

• When reverse-biased, the leakage current should be zero,

whatever the voltage;

• The transition between on and off states should be instantaneous.

• No power loss during ON state, OFF state & transition from one
state to other state.
 CHARACTERISTICS OF PRACTICAL DIODES

• Have a larger but limited power handling

capacity.

• Have a slow switching speed compared to other

semiconductor devices.

• Have a switching and operational losses.

• The switching actions are not momentary. Have

significant amount of reverse recovery time.
 DIODE PROTECTION (SNUBBER CIRCUITS)
• Snubber circuits are a protective circuit used to protect the diode
from overvoltage spikes & rate of change of current,

• A very common snubber circuit for a power diode consists of a

capacitor and a resistor connected in parallel with the diode as
shown in Fig. below.
• During FW bias, since the diode will be
short circuited the current flows through
diode.
• During Reverse bias, the current flows
through RC network. (current is limited by
R, while the voltage is limited by C (store
APPLICATION CIRCUITS

• For Rectification (AC-DC current)

• Signal Limiters
• Voltage Regulators
• Switches
• Signal Modulators
• Signal Mixers Etc.
 1. Diode as a Rectifier
• The most common and important application of a diode is the
rectification of AC power to DC power. Using diodes, we can
construct different types of rectifier circuits. The basic types of these
rectifier circuits are half wave, full wave center tapped and full bridge
rectifiers. A single or combination of four diodes is used in most of
the power conversion applications. Below figure shows diode
operation in a rectifier.
 2. Diodes in Clipping Circuits
• Diode Clipping Circuits are used to eliminate amplitude noise or
voltage spikes, voltage regulation or to produce new waveform.
• Clipping Circuits are used in FM transmitters, where noise peaks are
limited to a particular value so that excessive peaks are removed
from them. The clipper circuit is used to put off the voltage beyond
the preset value without disturbing the remaining part of the input
waveform.

Using these clipper circuits,

positive half cycles of the input
voltage waveform will be
removed.
 3. Diodes in Clamping Circuits
• A clamper circuit is used to shift or alter either positive or negative
peak of an input signal to a desired level. This circuit is also called as
Level Shifter or DC restorer. These clamping circuits can be positive or
negative depending on the diode configuration.
• In positive clamping circuit, negative peaks are raised upwards so the
negative peaks fall on the zero level. In case of the negative clamping
circuit, positive peaks are clamped so that it pushes downwards such
that the positive peaks fall on the zero level.
 4. Diodes in Logic Gates
• Diodes can also perform digital logic operations. Low and high
impedance states of logic switch are analogous to the forward and
reverse-biased conditions of the diode respectively. Thus, the diode
can perform logic operations such as AND, OR, etc. Although diode
logic is an earlier method with some limitations, these are used in
some applications. Most of the modern logic gates are MOSFET
based.
• The below figure shows the OR gate logic implemented using a pair
of diodes and a resistor.
 5. Diodes in Reverse Polarity Protection
• The reverse polarity or current protection is necessary to avoid the
damage that occurs due to connecting the battery in a wrong way or
reversing the polarities of the DC supply. This accidental connection
of supply causes to flow a large amount current thorough the circuit
components, which might result in their failure or in a worst case,
their explosion.

• Therefore, a protective or blocking diode is connected in series with

the positive side of the input to avoid the reverse connection
problem.
 6. Diodes in Voltage Spike Suppression
• In case of an inductor or inductive loads, sudden removal of supply
source produces a higher voltage due to its stored magnetic field
energy. These unexpected spikes in the voltage can cause the
considerable damage to the rest of the circuit components.
• Hence, a diode is connected across the inductor or inductive loads to
limit the large voltage spikes. These diodes are also called by
different names in different circuits such as Snubber diode, Flyback
diode, Suppression diode, Freewheeling diode and so on.

In the figure, the freewheeling diode is

connected across the inductive load for
suppressing of voltage spikes in the
inductor. When the switch is suddenly
opened, a voltage spike is created in the
inductor. Therefore, the freewheeling
diode makes a safe path for the flow of
current to discharge the voltage offered
by the spike.
 SCR
APPLICATION
CIRCUIT
 Thyristor (SCR)

• A thyristor is a semi-controlled, three-terminal device with

four layers & 3 junctions of semiconductor material.

• Here are the layers, symbols and actual SCR.

-
G
Vak

ia
A
 CONT.
• SCRs are mainly used where high currents and voltages
are involved, and are often used to control alternating
currents.
• Modern SCRs can switch large amounts of power (up to
megawatts).
• Like a diode, an SCR conducts only in one direction.
 BASIC STRUCTURE AND OPERATION OF SCR

N2: is very thin & highly doped region

P2: is thicker & less doped region
N1: is the thickest & less doped (it is called blocking layer)
P1: is similar with P2
J3: is a low breakdown voltage (can’t block higher voltage)
 SCR OPERATING MODES

• Thyristors have three operating modes (states):

I. Forward blocking mode (FBM) : when a positive Anode to
cathode voltage (VAK) Voltage is applied to SCR,
- Anode will be positive w.r.t. cathode
-J1 & J3 will be forward biased.
- J2 will be reverse biased.
- As a result majority carried will be blocked due to J2. & a very
small current (A) due to minority carriers will flows through
the thyristor.
 CONT
II. Reverse blocking mode (RBM) : when a negative anode to

cathode (VAK) signal is applied to SCR,

- Anode will be negative w.r.t. cathode

-J1 & J3 will be reverse biased.

- J2 will be forward biased.

- As a result majority carried will be blocked due to J1 & J3 & a

very small current (A) due to minority carriers will flows

through the thyristor.

 CONT

III. Forward conduction mode (FCM): In this mode a positive

Anode to cathode voltage (VAK) Voltage is applied to SCR and a
positive gate current is also applied to the thyristor.
[i.e. forward blocking mode + gate triggered]
- When a substantial positive gate current is applied, J2 layer
will be depleted & starts to conduct.
- Hence the three junctions becomes forward biased (in
conduction mode).
- As a result the SCR works in conduction mode.
CHARACTERISTICS OF SCR
1. During forward blocking
mode, a very small current
starts to flow.
2. When a positive gate
current is applied, IA will
increase & VAK will
decrease. [for a very short
moment, the SCR will be
unstable] and maintain
forward conduction mode.
3. During reverse breaking
mode, a very small
•As IG is higher, the SCR will negative current will flow.
turn ‘ON’ very quickly. If a negative voltage
greater than Vbo is
•The lower the IG, needs high applied the SCR will go to
VBO to turn ‘ON’ the SCR. forced commutation
(conduction) state.
 TURNING ON OF SCR

• When the SCR is turned ‘ON’ with the application of the gate signal,
the SCR does not conduct fully at the instant of application of the gate
trigger pulse.

• In the beginning, there is no appreciable increase in the SCR anode

current, which is because, only a small portion of the silicon pellet
starts conducting in the immediate vicinity of the gate signal.

• After a very few time (delay time, tgd), which is is in the range of
1µsec, Anode current starts to rise from 10% of its peak value to 90%.

• The period during which the anode current rises from 10% to 90% of
its peak value is called the rise time (tr).
 SCR TURNING OFF (COMMUTATION)

• As in the case of diodes, the SCR has a reverse recovery time trr
which is due to charge storage in the junctions of the SCR.
• These excess carriers take some time for recombination resulting
in the gate recovery time or reverse recombination time tgr .
• Thus, the turn-off time tq is the sum of the durations for which
reverse recovery current flows after the application of reverse
voltage and the time required for the recombination of all excess
carriers present.
• The turn off time for converter grade SCR’s is 50 to 100msec and
that for inverter grade SCR’s is 10 to 20msec.
THYRISTOR CONDUCTION
 SCR GATE TRIGGERING CIRCUITS

▪ The most common circuits used to trigger SCR are:-

• Resistor (R)-triggering ckt

• Resistance Capacitance (RC) triggering ckt.

• Uni Junction Transistor (UJT) triggering ckt

 RESISTANCE FIRING CIRCUIT
• R1 is used to limits the current through
the gate of the SCR.
• R2 to is used to control the triggering
angle of SCR.
• R is used to control (stabilize) current
across SCR.
• The diode D is used to ensure that no
negative voltage reaches to the gate of
the SCR.

• Initially, R2 is very large. hence, I (current through the gate) will be small.

• when R2 is set to optimum value, the current (IG) will increase.

• Hence SCR will be triggered.

• As R2 decrease significantly, the SCR will trigger much earlier.

CONT
 APPLICATION CIRCUITS

• Due to the wide variety of advantages, like ability to

turn ON from OFF state in response to a low gate
current and also able to switch high voltages, makes
the SCR or thyristor to be used in a variety of
applications.

• These applications include switching, rectification,

regulation, protection, etc. The SCRs are used for
home appliance control include lighting,
temperature control, fan speed regulation, heating,
and alarm activation.
 1. SCR as a Switch
• The below figure shows the application of an SCR as a switch to ON
and OFF the power supplied to the load.
• The AC power supplied to the load is controlled by applying alternate
triggering pulses to the SCR. The resistors R1 and R2 protect the diodes
D1 and D2 respectively. The resistor R limits the gate current flow.

• During the positive half cycle of the input,

SCR1 is forward biased and SCR2 is reverse
biased. If the switch S is closed, gate current
is applied to the SCR1 through diode D1 and
hence SCR1 is turned ON. Therefore, the
current flows to the load through SCR1.

• Similarly, during the negative half cycle of the

Therefore, by controlling the switch S the load
signal, SCR2 is forward biased and SCR1 is
current can be controlled at any desired position.
reverse biased. If the switch S is closed, gate
It is observed that, this switch handles a few mill
current flows to the SCR2 through diode D2.
ampere current to control the several hundred
Hence the SCR2 is turned ON and the load
ampere current in the load. So this method of
current flows through it.
switching is more advantageous than mechanical
or electromechanical switching.
 2. Power Control Using SCRs
• The SCRs are capable to control the power transmitted to the load. It is
often required to vary the power delivered to the load depends on the
load requirements such as motor speed control and light dimmers.
• Under such conditions power varying with conventional adjustable
potentiometers is not a reliable method due to the large power
dissipation. For reducing this power dissipation in high power circuits,
SCRs are the best choice as power control devices.
 AC Power Control Using SCRs
• In AC circuits, the phase control is the most common form of SCR
power control. In phase control, by varying the triggering angle alpha
at the gate terminal, power control is obtained.
• By varying the firing angle to the respective SCRs, the turn ON times
are varied. This leads to vary the power consumed by the load. In the
below figure SCRs are triggered at delayed pulses (that means an
increase of firing angle) results to decrease of the power delivered to
the load. The main advantage of the phase control is that the SCRs are
turned OFF automatically at every current zero position of AC current.
Hence, no commutation circuit is required to turn OFF the SCR.
 DC Power Control Using SCRs
• In case of a DC circuit, power delivered to the load is varied by varying
the ON and OFF durations of the SCRs. This method is called as a
chopper or ON-OFF control. Below figure shows the simple ON-OFF
control of load using SCR.
• It is also possible to switch the SCR at certain triggering frequency so
that the current flowing to the load is varied. The example of such
circuit is the PWM based SCR circuit to produce the variable output to
the load.
 CONT…. Configurations for rectification

Controlling the average

DC
load power
through rectification
 3. Over voltage Protection using SCR
• Due to the fast switching action of the SCR, one of the common SCR
Applications is that it can be employed as a protecting device. The
circuit used for the protection against over voltages is referred as
Crowbar circuit.
• The crowbar circuit below is connected across the circuit or load which
is to be protected. This circuit consists of SCR which is triggered by
zener diode arrangement. This zener diode is selected in such a way
that under normal operating condition, it acts as an open switch. So,
the voltage across the resistor is zero and hence the SCR remains in
OFF state.
• Whenever the voltage of the supply source
exceeds the specified limits, zener diodes
starts conducting and a sufficient voltage
appears across the resistor. This drives the
SCR into conduction mode. The voltage
drop across the SCR is reduced as it is in
conduction mode and thus load is
protected from the over voltage.
 TRIAC
APPLICATION
CIRCUIT
 TRIAC
• A TRIAC is a three terminal (MT2 , MT1 and gate G).bi-directional
switching thyristor device.

• The TRIAC is a two thyristors connected back – to – back with a

common gate. It can conduct in both directions; when it is triggered
into the conduction state.
CONT

TRIAC as two back –to-back thyristors plus one extra N- region

 TRIGGERING METHODS OF TRIAC
• TRIACs can be triggered by either a positive or a negative current
applied to its gate wrt MT1.
• Either of the electrodes MT1 and MT2 can act as anode or cathode.

A TRIAC can be operated in four different modes.

1. When MT2 is positive w.r.t MT1 & a positive gate
signal is applied w.r.t MT1.
2. When MT2 is negative w.r.t MT1 & a negative
gate signal is applied w.r.t MT1.
3. When MT2 is positive w.r.t MT1 & a negative
gate signal is applied w.r.t MT1.
4. When MT2 is negative w.r.t MT1 & a positive
gate signal is applied w.r.t MT1.
V-I Characteristic curve of TRIAC

• When gate current is increased the break over voltage decreases.

 TRIAC Vs SCR

• TRIAC is a bidirectional device, whereas SCR is a unidirectional

device.
• TRIAC terminals are MT2, MT1 and gate whilst SCR has anode,
cathode and gate terminals.
• For both positive and negative gate currents, TRAIC conducts
but with only direction on gate current turn ON the SCR.
• Four different modes of operation are possible with TRIAC,
whereas with SCR one mode of operation is possible.
• TRIAC are available in less ratings compared with SCRs.
• TRIAC characteristics are laying in first and third quadrants
while SCR characteristics lay in the first quadrant.
• Reliability is less compared with SCRs.
 APPLICATION CIRCUITS
• Due to the bidirectional control of AC, TRIACs are
used as AC power controllers, fan controllers, heater
controllers, triggering devices for SCRs, three
position static switch, light dimmers, etc. TRIAC as a
switch and phase control applications are discussed
as follows.

• It is used in high or medium A.C and D.C power

control applications.
• TRIAC is widely used to control the speed of single
phase induction motors.
 1. TRIAC as a High Power Switch
• As the TRIAC uses low gate voltage and currents to control the high
load voltage and currents, it is often used as switching device in many
switching operations. The figure below shows the use of TRIAC as
ON/OFF AC switch to control the high power lamp.
• When the switch S is at position 1, the TRIAC is in forward blocking
mode and hence the lamp remains in OFF state. If the switch is thrown
into position 2, a small gate current flows through the gate terminal
and hence the TRIAC is turned ON. This further makes the lamp to
switch ON to give a full output.
 2. Phase Control Using TRIAC
• Like SCRs, a phase control method of varying average power to
the load is also possible with the TRIACs. By controlling the
triggering angle in each half cycle of the input AC, the power
delivered to the load is controlled. The delay for which the
triggering is delayed is termed as delay angle and the angle for
which the TRIAC conducts is termed as conduction angle.
• The figure below shows the use of TRIAC for phase control
method in order to produce the variable power to the load.
Diodes D1 and D2 passes the current flow to the gate terminal in
positive and negative half cycles respectively.
POWER TRANSISTORS

BJT
 INTRODUCTION

• A transistor is basically a Si on
Ge crystal containing three
separate regions. They come in
two main types: NPN and PNP,
each with unique properties.
• NPN transistors use a small
current to control a larger
one and make things work
like radios or computer
parts.
• However, PNP transistors
are used when we need the
current flow to go the
opposite way.
 Cont.
• Bipolar transistors have three parts: collector, emitter, and base.
The transistor has two junctions. One between emitter and the
base and other between the base and the collector. Because of
this the transistor is similar to two diodes, one emitter base
diode and other collector base diode.
• The main difference between the two types of transistors is that
holes are the more critical carriers for PNP transistors, whereas
electrons are the essential carriers for NPN transistors.
 PRINCIPLE OF OPERATION

• In transistors, emitter is heavily doped. Its job is to emit or

inject electrons into the base.
• The base is lightly doped and very thin, it passes most of the
emitter-injected electrons on to the collector. The doping level
of collector is intermediate between the heavy doping of
emitter and the light doping of the base.
• The collector is so named because it collects electrons from
base. The collector is the largest of the three regions; it must
dissipate more heat than the emitter or base.
• The transistor has two junctions. One between emitter and the
base and other between the base and the collector. Because of
this the transistor is similar to two diodes, one emitter base
diode and other collector base diode
V-I CHARACTERISTICS OF BJT

A COMMON EMITTER CONFIGURATION

APPLICATION CIRCUITS

• BJTs can be thought as two diodes back-to-back with the

ability to switch on or off or even amplify signals.

• Bipolar Junction Transistors are essential for

• Quick switching device and
• Amplifying device tasks.
• Filtering Tasks
• Oscillator circuits.
 1. BJT AS A SWITCH:

• Transistor will become ON (saturation ) • Transistor will be in OFF ( cutoff )

when a sufficient voltage V is given to when the input Vin equal to zero.
input. During this condition the During this state transistor acts as
Collector Emitter voltage Vce will be an open circuit and thus the entire
approximately equal to zero, i.e., the voltage Vcc will be available at
transistor acts as a short circuit. collector.
• For a silicon transistor it is equal to
0.3v. Thus, collector current Ic = Vcc/Rc
will flows.
2. BJT AS AMPLIFIERS:

Common-collector Common-emitter amplifier Common-base amplifier

amplifier (emitter
follower)
This is because the BJT has higher gain, better linearity, better 1/f noise, and
can be turned on by applying a voltage of about 0.7 V between the base and
emitter. In addition, BJTs are sometimes used in environments with large
disturbances due to their high resistance to static electricity (ESD).
3. BJT in LC Oscillators

LC oscillators can generate high frequency sine waves for use in radio
frequency (RF) type applications with the transistor amplifier being of a Bipolar
Transistor or FET.
POWER TRANSISTORS

MOSFET
 INTRODUCTION
• MOSFET or Metal Oxide Silicon Field Effect Transistor is a
voltage-controlled three-terminal device that is used in circuits
for switching and amplification purposes. They have three main
parts - drain, source, and gate - which work together to manage
electronic signals quickly and accurately.

• Unlike BJT, MOSFET is a majority carrier device (i.e. the current

flow through device only due to electrons). MOSFET belongs to
the unipolar device family, because it uses only the majority
carriers in conduction.
• Switching speed of MOSFET is very high. Switching time is of the
order of nanoseconds.
• Like BJT, MOSFET is a non-latching device (requires continuous
application of gate-source voltage of appropriate magnitude).
Unlike BJT, MOSFET is a voltage-controlled device.
 PRINCIPLE OF OPERATION OF MOSFETs
• The construction of MOSFET is shown in the following figure.
• The working of MOSFET depends upon the metal oxide capacitor
(MOS) that is the main part of the MOSFET. The oxide layer presents
among the source and drain terminal. It can be set from p-type to n-
type by applying positive or negative gate voltages respectively. When
apply the positive gate voltage the holes present under the oxide layer
with a repulsive force and holes are pushed downward through the
substrate. The deflection region populated by the bound negative
charges which are allied with the acceptor atoms.
 Cont.

• When a significant (about 20v) gate to source voltage (VGS) is applied, a small
channel is formed below sio2 layer.
• Hence current starts to flow from source to drain via the channel. [VGS > VThreshold].
• MOSFET will turn OFF when VGS < VThreshold.
 TYPES OF MOSFETS
• The MOSFET is classified into two types such as
• Depletion-type MOSFET or DE-MOSFET: The DE-MOSFET can be
operated in both depletion mode and the enhancement mode. For
this reason, it is also called depletion/enhancement MOSFET.
• Enhancement-type MOSFET or E-MOSFET: The E-MOSFET can be
operated only in enhancement mode.
Depletion MOSFETs Enhancement MOSFETs

n & P-channel Depletion-mode respectively n & P-channel enhancement-mode respectively

ID VS VDS CHx CURVE OF MOSFET
 Cont.

• The three distinct regions of operation of MOSFET are:

• Triode region,
• Saturation region, and
• Cut-off region.
• Triode region is equivalent to saturation region in BJT. While
saturation region is equivalent to active region in BJT.
• When used as a switching device, only triode and cut-off
regions are used, whereas, it is used as an amplifier, the
MOSFET must operate in the saturation region.
• when the gate-to-source voltage exceeds the device
threshold voltage VTh, the device can be either in the triode
region, which is also called “constant resistance'' region, or in
the saturation region, depending on the value of VDS.
 APPLICATION CIRCUITS
• The MOSFET is very far the most common transistor and can be used in
both analog and digital circuits. One of the most common applications
of MOSFETs is as switches in power electronics circuits.
• A MOSFET can switch on and off very fast, allowing it to handle high
frequencies and reduce power losses. Additionally, it can handle high
currents and voltages, which makes it suitable for high-power
applications.

• MOSFETs are used in digital integrated circuits, such as

microprocessors.
• Used in memories and in logic CMOS gates.
• Used as analog switches.
• Used as amplifiers.
• Used as oscillators in radio systems.
• Used in automobile sound systems and in sound reinforcement systems.
 1. MOSFET as a Switch

• In the figure at right enhanced

mode N-channel MOSFET is
being used to switch a sample
lamp ON and OFF.

• The positive gate voltage

(VGS =+ve) is applied to the gate
of the MOSFET and the lamp is
ON.

• If zero voltage((VGS=0) applied to

the gate of the MOSFET then
lamp turns off.
2. MOSFETS in LC Oscillators

Three-terminal MOSFET Hartley oscillator circuits: (a) conventional drain to

source feedback and (b) gate to source feedback topology.
 MOSFET Vs. BJTS
I. Power MOSFET has lower switching losses & higher on-state
(conduction) losses. A BJT has higher switching losses but lower
conduction loss.
• So, for high frequency applications, power MOSFET is superior.
But for lower operating frequencies (about 10 to 30kHz), BJT is
superior.
II. MOSFET is voltage controlled device whereas BJT is current controlled
MOSFET has positive temperature coefficient for resistance. This
makes parallel operation of MOSFETs easy. BJT has a negative
temperature coefficient. so paralleling is difficult.
III. In MOSFET, secondary breakdown does not occur, because it has
positive temperature coefficient. While BJT has negative temperature
coefficient, secondary breakdown (thermal breakdown) occurs.
IV. Input impedance of MOSFET is high, while low in BJT.
V. The state of the art MOSFETs are available with ratings up to 500 V,
140A whereas BJTs are available with ratings up to 1200V, 800 A.
POWER TRANSISTORS

IGBT
 INTRODUCTION

• IGBT is an insulated gate

bipolar transistor.
• It is a newly developed power
electronic device in the area of
power electronics technology.
• It has a combined advantage
characteristics of MOSFET and
BJTs.
• So as, IGBT has high input
impedance like a MOSFET and
low-on state power loss as in a
BJT.
 Cont.

• Its construction is same as

power MOSFET except that n+
layer at the drain in a power
MOSFET is replaced by P+
substrate called collector.
• Input characteristics of IGBT is
similar to MOSFET. While the
power stage is similar to BJT.

Equivalent circuit of IGBT:

 PRINCIPLE OF OPERATION OF IGBT
• In order for IGBT to conduct, the
applied gate to emitter voltage
(VGE) should be greater than
threshold voltage (VTH).
• When VGE >VTH and a positive
collector to emitter (VCE) is
applied:
✓J1 will be forward biased (hence
holes injected in to N+ layer).
✓J3 will be also forward biased
(hence electrons flow towards J3). • When negative collector to emitter
voltage is applied to IGBT, J1 & J3 will
• Thus, a small channel will be
be reverse biased & block negative
formed in which current flows from voltage.
Emitter to Collector. • If VGE is less than the threshold
• Since IGBT both holes & electrons voltage VT then IGBT is in OFF state. If
flow through IGBT it is both VGE is greater than the threshold
majority & minority career device. voltage VT then the IGBT is in ON state.
V-I CHARACTERISTICS OF IGBT
 APPLICATIONS OF IGBT
• IGBT’s are voltage controlled power transistor. They are faster than
BJT’s, but still not quite as fast as MOSFET’s. IGBT (Insulated Gate
Bipolar Transistor) is key in handling high-voltage circuits.
• This device combines the simple gate-drive characteristics of MOSFETs
with the high-current and low-saturation-voltage capability of BJTs.
• Thanks to fast switching speed capabilities and minimal saturation
voltage characteristics, IGBTs are extensively employed for applications
like solar energy harnessing units and uninterruptible power supply
(UPS). In consumer electronics, They can be used for temperature
control with induction heater cooktops or digital camera stroboscopes.
• IGBT’s are suitable for high voltage, high current and high frequency up
to 20KHz. IGBT’s are available up to 1400V, 600A and 1200V, 1000A.
• Medium power applications like
• DC and AC motor drives, medium power supplies,
• solid state relays, general purpose inverters,
• UPS, servo controls, robotics, cutting tools,
• induction heating & so forth.
 1. IGBT in Motor Drive Circuit

• The figure shows an example of a motor drive circuit. IGBTs are widely used
as switching devices in the inverter circuit (for DC-to-AC conversion) for
driving small to large motors. IGBTs for inverter applications are used in home
appliances such as air conditioners and refrigerators, industrial motors, and
automotive main motor controllers to improve their efficiency.
 2. IGBT in Solar Inverters

Figure 1: Typical single-phase

H bridge topology solar
inverter

In this topology, the power devices (i.e. IGBTs co-packed with an antiparallel Fast Recovery
Diode) are typically pulse width modulated at a frequency in the 20 to 40 kHz range, resulting
in conduction and switching losses in each device which have to be minimized. Further, a long
inverter life demands device ruggedness and operating temperatures be considered. For this,
IGBT ruggedness defined by the length of time it can withstand a short circuit across its
collector and emitter terminals, and IGBT operating junction temperatures are the key factors
(the cooler the device runs the longer its operating life).
3. IGBT in Uninterrupted Power Supply
FET vs. BJT vs. IGBT: