Cathode Thermal Analysis: Temperature & Warm-Up
Cathode Thermal Analysis: Temperature & Warm-Up
North-Holland
A n j a n Sil *, N . K . S a m r i a ** a n d D.S. V e n k a t e s w a r l u *
Banaras Hindu University, Varanasi 221 005, India
This paper gives a theoretical estimate of the cathode temperature distribution at the surface and the warm-up time. Several cases
of practical interest have been studied from the thermodynamic considerations using the software specially developed for this
application. The software is in two parts, viz., the steady-state analysis which gives the cathode surface temperatures and the transient
analysis which yields the warm-up time. Temperature-dependent thermal conductivity, specific heat, density, and emissivity have
been used in the transient analysis which improves the accuracy. Scaling laws for the determination of cathode surface temperature
have been devised to cater for various sizes of cathodes used in industry. Not reported so far, our results show that a pancake-heater
configuration has a better thermal response but a non-uniform cathode surface temperature profile whereas the conventional
helical-heater configuration has a relatively poor thermal response but a more uniform temperature profile on the cathode. This
aspect gets amplified and is very revealing at larger cathode dimensions.
Sleeve ~--- ~.
~.~
iiiii!iii:i:f!i,! 1
2 fabrication it is assumed that the potting will be
made by plasma potter so as to achieve the near
L ::::::::::::::::::::::~::~..::.:-fi
ol-r,-t i
ii ideal bonding between the metal and the ceramic.
Even though the analysis and the software devel-
oped are general in nature, in view of the complex-
ities involved, the problem has been solved for
(b) typical geometries in both the steady and the
Fig. l. Potted heater-cathode assembly with (a) helical healer unsteady case to obtain the cathode surface tem-
and (b) pancake heater. peratures and the warm-up time, respectively. The
dimensions chosen for different components of
the assembly are given in table 1. The present
equations are then solved [8] by the iterative analysis also incorporates the steady-state temper-
method for the steady-state case and by the ex- ature distribution on concave cathodes, to take
plicit method in the unsteady-state case. into account the curvature effects of the cathode
The numerical scheme used in the heat transfer surface. The concave cathode parameters are taken
analysis, takes into account the heat losses by in this analysis as that of Vaughan's Pierce elec-
conduction through the cathode support structure tron gun [10]. These parameters and the dimen-
(sleeve) which is an essential part of the heater- sions of other components of the assembly are
cathode package. To account for the cathode sus- given in table 2. The results obtained for the
pension, one would need the precise knowledge of concave cathode case are compared to those of the
the complete assembly (i.e. not only the geometry flat cathode case which are of significance to the
of the heater-cathode assembly should be known, thermal design of the assembly.
but also the geometry of the total tube assembly In practical designs, one uses coaxial heat
should be known in detail). shields around the cylindrical part of the h e a t e r -
In general, it may be expected that the thermal cathode assembly so as to conserve some of the
behaviour of the assembly is described fairly accu- radiative heat flux and thereby improve the ther-
A. Sil et al. / Thermal analysis of a cathode 231
Table 3
Range of temperatures and values of the coefficients for the approximation of thermal conductivity of c o m p o n e n t materials with an
accuracy greater than 2%
transfer process from the sleeve surface to the applied. Thus at three different interfaces we have
outer surface of the coaxial heat shields, as the following equations:
4- i4sh)
~r
z, ,) Jd =ks' (r)rt Or
z, ,)
]~,'
-1 -- %j
+ - - 1+ -1 - (sh
-
- - Asl
-
coefficients hr(T )
for all the materials have to be r 2 < r < r 3. (8c)
recomputed at each time step chosen before going
on to the next step and the average values of p, C
and ( recommended [13,14] have to be used for
4. S c a l i n g l a w s
corresponding small temperature ranges, is k(T)
given by:
This paper extends the analysis presented herein
k(T) =k0(a + ... (5) in forms which enable predictions to be made on
the effect of the cathode size parameters on the
where ill, f12..... /3, are the coefficients of the
steady temperature profiles of the assembly by
temperature and their values corresponding to the
range of the temperature are given in table 3. applying c o m m o n scaling laws of "constant input
heat power density scaling", although the mesh
However, the steady-state calculation has been
performed with constant thermal properties, using become coarse for larger scaling factors.
the recommended values [13,14] at - 1100 K. The The physical dimensions of the different com-
ponents in the assembly are scaled by a c o m m o n
initial condition is given by
factor a, and power fed to the heater is multiplied
T(r, z, 0) = Tamb. (6) by a 2. In all sizes of the assembly temperature
On the axis of the assembly, i.e. at r = 0, ther- profiles are presented with respect to distances.
mally insulated boundary conditions are assumed. The scaling starts from the dimensions of the
Thus we have, typical geometry of the assembly for which the
numerical formulations have been developed to
OT(O, z, t)/Or=O, 0<z<z 3. (7)
the extreme cases of small and large cathode di-
At the interface between the two materials the ameters, say 1 to 120 m m including proportionate
condition of the continuity in heat flux [15] is variation of the pellet thickness.
234 A. Sil et aL / Thermal analysis of a cathode
7
i,]÷l
6
5. S o f t w a r e d e v e l o p m e n t i-l,j [~ j i+l,j
5
iti-1
The problem is basically of three-dimensional
nature with cylindrical coordinates (r, @, z), but 3
the angular symmetry of the geometry of the as- 2
sembly has been exploited to reduce the problem I
into two-dimensional coordinates r and z in eq. (a)
m.
(1). Moreover, the axisymmetric nature of the 1 2 3 ~. 5 5'86 r ( m m ) ~"
cylinder makes it possible to analyse diametrically Fig. 2a. Vertical section of a potted heater cathode assembly
one half of the body, and interpret the results for with mesh generation (84 elements) for steady-state analysis.
the whole body by putting the constraint O T / O r =
Oat r=0.
The finite-difference formulations of the elements and using Gauss-Seidel iterative satis-
governing differential equation (1) and the faction of the boundary conditions. The flow di-
boundary conditions (3a) to (3e) have been arrived agrams of the software packages are given in figs.
at by subdividing the one half of the assembly into 3a and 3b.
84 elements for steady-state analysis and 24 ele-
ments for transient-state analysis. The proper step
sizes in space and time for transient analysis are . Z(mrn)
estimated by carrying out several test calculations t
Data viz. Assembly geometry Dimensionsof the \ The present investigation has manifold objec-
"•Readcomponents~grid spacings, constant thermophysical
properties. \ tives, viz. surface temperature distribution of
cathode and other boundaries, isotherms inside
Subdivision of the assembly into the assembly, scaling of geometry, curvature ef-
number of elements.
fects, incorporation of heat shields and warm-up
time calculations. The following sections present
Initialisation of temperaturesat
all the elements. the results and discussions in each of these cases.
-1
Compute new temperature field 6.1. Surface temperature distribution of the cathode
from previous values using
Gauss-Seidet iteration. and assembly
(b) ~es No
tains its m a x i m u m value at the mid-point of the
heater coil height which is also intuitive for any
helical heater. However, for the pancake heater,
Fig. 3b. Flow diagram (transient-state analysis). with the increase of input power the sleeve surface
236 A. Sil et aL / Thermal analysis of a cathode
~= 13oo
average temperature gradient increases towards
the cathode. 1200
Fig. 4c shows the radial temperature distribu- uJ
tion on the bottom surface of the dielectric. For ~' 11oo
the helical heater case the temperature falls on # I I I I I
1000
both sides of the source. The falling is much faster 0 10 20 30 40 50 60
towards the interface between the dielectric and INPUT HEATER POWER, P(W)
the sleeve. This may be attributed to the fact that Fig. 5. Steady-state temperature of the cathode versus input
the thermal conductivity of the dielectric is much heater power.
A. Sil et aL / Thermal analysis of a cathode 237
12t
11
1485 K
tn
RADIAL D I S T A N C E ( m r n ) -- "~
(b) ~ rl 1 ]j
r2 r3 -I
160(
1500 i
¢y
223 i
F--
i', :-
1415 1400 ~ ""
ua 1395 w,o.~
1375
1300
1335 ~ i
1315 1200 7
/
1295 J ~ , fa
1275
1100; ] l J "f'°i 1100L~ ~ ' ~ J ~ 8
2 4 0 2
RADIAL LONGITUDINAL RADIAL
DISTANCE,r'( mm) DISTANCE, z' (ram) DISTANCE,r'( mm)
(a) (b) (c)
Fig. 7. Effect of scaling of dimensions on temperature distributions at constant input heater power density in the potted
heater-cathode assembly: (a) radial temperature distributions on cathode of various sizes, (b) longitudinal temperature distributions
on sleeve of various sizes, and (c) radial temperature distributions on dielectric bottom surface for various assemblies.
with increase in the assembly size, when the pan- temperature of the cathode surface decreases with
cake heater is used. This is because the thermal the increase in the assembly size. The fall of the
transmittance towards the cathode is higher than steady temperature value is also understood from
the thermal transmittance towards the bottom di- the concept of the thermal transmittance as long
electric surface, when the finite value of the con- as the heater location is fixed. It is also observed
tact resistance of the interfaces is neglected. For from the set of curves that the radial temperature
the helical heater-cathode assembly the steady distributions are almost uniform for the helical
A. Sil et aL / Thermal analysis of a cathode 239
1316
a)
1315
8 o26 mm
1314 INPUT HEATER P0WER=20W
v
o...
1313 J'r c ==
z /--1.~K = a.o26 ~m
uJ
p,,
1312 A /J'r c = 15'215 rnm
; //-IRK= 8.026
1295 ~ rK =8"026 mm
129b, V " ~ 15"215 rnm 6 CATHODE
,,=,
1292j-- o r~?.~..-i~I
o 12 4\6
e r
-'POTTED HEATER
:2299~F , , , , , , , \ (PANCAKESHAPE)
0 1 2 3 4 5 6 7 8 ~-DIELECTRIC SURFACE
RADIAL DISTANCE OF CATHODEDISC
(mm)
1328
(c)
131~'(b ) 132Lo
13121 J ~ 1320
A 1311r/ rc=OO
o 1316
1310.~ 1312
129~" ,~= 13oe rc =
n- 1293 130b, 15.215turn
L,U
1292 13oo
I'--
1291 ~ 1296
1290 1292
12BC I J I 1288
0 1 2 3 4 0 1 2 3 4 5 6
LONGITUDINAL DISTANCE RADIAL DISTANCE ( r a m )
(ram)
Fig. 9. Effect of having a concave surface to the cathode: (a) cathode disk radial temperature distributions, (b) longitudinal
temperature distributions on the sleeve and (c) radial temperature distributions on the dielectric bottom surface of the assembly.
thermo-physical properties (thermal conductivity show that in the presence of the heat shields the
and emissivity) to include this design. Fig. 10a theoretical curve has the same trend as the experi-
shows the geometry of the ion source, and fig. 10b mental one but there is about 20% difference in
shows its discretized form for analysis. In fig. 10c, the temperature values for corresponding filament
the computed results are presented by the dotted powers. The discrepancy in the result is due to the
curve, whereas the reported typical experimental fact that the model analysed is a simplified one,
approximate result is shown by continuous line. and does not include the following factors:
The improvement of thermal efficiency with heat (1) the porosity factor in the emitter as well as
shields over the case when heat shields are not potting structure;
present (as dashed curve) is also depicted in fig. (2) condition of the interface formed across the
10c wherein heater power versus cathode surface intermetallic joints;
(brightness) temperature is shown. The results (3) the location of the heat shields;
A. Sil et aL / Thermal analysis of a cathode 241
I 1"~12 ~o-~rwp
~ -,E ~ 0"0508mm thick moly hea~
~ O
13 I// // O ~
f ~ 0--t-4~-- 0 5 0 8 mm ill moly bitilar heater
~ ~ ,~ I FUll wrapped with 0"25b,mm mow
[~J~J at exit leads
II 11-~ Re Support struts brazed
(a)
TU
t'- 1.016
0"7 ~'Z(mm )
! , I
! I r !.-.
1 / I , M"
• I I _
J , I I ...... r(mm)
10"9 -I
- - 12'7
15"2 - -
(b)
All dimensions ~n m m
160
1~0
Typical e x p e r i m e n t o l c u r v e available
-----Without heat shield (Theoretical)
~ 1 2 0 _. ......... W i t h heat shield ( T h e o r e t i c a l )
n
I / /
-----With h e a t shield including the losses /
J 100 t h r o u g h 1"016(~ s u p p o r t s . / / • ....
20
(c)
800 900 1000 1100 1200 1300 lt, O0 1500 1600
Emitter f a c e t e m p e r a t u r e ~ TB (°C] ( B r i g h t n e s s )
Fig. 10. (a) Spectra-Mat standard 600 ion source. (b) Vertical section of the ion source with mesh generation for steady-state analysis.
(c) Temperature versus heater characteristics of Spectra-Mat standard 600 ion source.
(4) actual emissivities of the sleeve surface and (5) heat losses by radiation and conduction
that of the surface of the heat shield (which sig- through rhenium support struts which are brazed
nificantly depend on the surface condition and to a m o l y b d e n u m body (sleeve) at three places at
contribute to the radiative exchange); 120 o apart;
242 A. Sil et aL / Thermal analysis of a cathode
1700
o f ~ = 1, Power = 40W
~15oo
f ¢ =1,Power =20W
I-,<
1300 I ¢--2
o.
uJ
I- 11 O0
14_
""
:D 900
u3
oN
,-I-
700
o 500
300 I I I I I I I I I I
0 200 400 600 800 1000 1200 lt*O0 1600 1800 2000 2200
TIME (sec.)
Fig. 11. Temperature-time plots of the cathode surface of the typical size heater-cathode assembly and few of its scaled sizes with
pancake heater configuration.
(6) the brightness temperatures of the emitting 10 ° C than that obtained by steady-state analysis.
side were calculated from true temperatures by This is perhaps due to the fact that in the transient
using the following formula [1] case the total energy balance condition is not
reached owing to the fact that less number of
1 1 2.303~ log( E x )
elements and only a finite number of time steps
TB T. C1
have been used in the calculation. The transient
which is not truly applicable to the emitter of an thermal profile has also been computed for higher
electron or ion source; and value of the input power for one geometry ( a =
(7) the emitter materials which are conventionally
fused into the porous plug of tungsten are not
taken into account.
1.0) of the assembly. This is to illustrate the possi- made use of for electronic switching from high to
bility of reducing the warm-up time of the cathode low power values to reduce the warm-up time
by electronic power switching from higher to low considerably.
value. Parameters like heater location, helix diameter,
sleeve thickness can be optimized for the chosen
geometry of the assembly. This analysis is also
7. Conclusions
useful to estimate safe input power levels to avoid
The present analysis has been undertaken to excessive heating leading to the melting of materi-
simulate the potted heater-cathode assembly of als constituting the assembly. It would also throw
cylindrical geometry and determine the tempera- light on the processes and intermediate materials
ture distribution on the cathode surface and its required to mechanically and thermally bond the
warm-up time. Due to the nonlinearities involved cathode to its supporting sleeve.
in the basic equations and boundary conditions,
the solutions have been obtained for a typical
geometry having ideal interfaces. Acknowledgements
Dimensional scaling laws of constant input
power density have been devised to include practi- The authors are grateful for the financial assis-
cal cases of interest, i.e. 1 to 120 m m diameter tance of the Department of Electronics, Govern-
cathodes. Curvature effects of the cathode surface ment of India.
have been included and compared to that of a flat
cathode of the same thermal mass. The entire
analysis has been done for a single size of potted Appendix
heater-cathode assembly. The results have been
computed separately for two of the commonly All the interior element temperatures are given
used heater configurations to compare the dif- by
ference between using a helical heater as opposed ~p+l= 1- At
to a pancake heater. The comparative results show i,j
Pi,j(T) Ci4(T ) dv/,j
that though it suffers from the relative difficulty
of attaining efficient thermal response, the helical X( Mi-,,j(T) + Mi+,4(T)
heater would be used where a uniform cathode
temperature distribution is required. The fact that +M,,j_,(T) + M, j+,(T))/ ZP.
• I,J
cathode size parameters have a significant in-
fluence on the temperature profiles has been re- + At
vealed by dimensional scaling at constant input pi,j(T) Ci4(T ) dvi,j
heat power density.
Heat shields around the heater-cathode pack-
× [M,_,.j(T) 7:"
i+,,j
age have also been considered as a boundary +M,,j_,(T) T,Py_ 1 + M,,y+I(T ) TiPj+ 1
condition. The steady-state software has been sui-
tably modified and used to analyse the Spectra- +Qs P(r, z ) ] , (10)
Mat standard 600 ion source design and compared where
with the published typical experimental data avail-
Az
able. The theoretical results have been found to be P(r, z) = ~ r , q [ 1 - u(z -- z,)]
within 20% of the experimental (typical) values.
Within the limitations of the theoretical model for the helical heater, and
(listed at 6.5) the agreement seems to be reasona-
P(r, z)= ( r - X A r ) Ar ¢ , : , [ 1 - u ( r - r , ) ]
ble.
r2
The transient analysis results of temperature
versus time for different input powers can be for the pancake heater.
244 A. Sil et al. / Thermalanalysisof a cathode
The coefficients in eq. (10) are given by At
ki-l,j(T) Ai-1/2,j + M d ( r ) ) T,Py + P d ( r ) C d ( T ) dvi 4
Mi-l,J (T) = Ar '
x [Mi_,.j(T ) Tf_Lj+ Mi+,4(T ) T.P+I,j
ki+i4(T) Ai+1/24
M,+,,j(T) = Ar ' +M<j+1(T) TiPj+, + Md(r) ramb]
ki,i-l(T) Ai,j-1/2 (llc)
Mi,J -I(T) = AZ '
for the potting surface, where
ki,j+l(T) Ai,j+l/2
Mi,J +'(T) = Az Ma(T ) = [ h , ( T ) ] d Ai,j-l/z.
The temperatures at the boundary points of the In the above formulations h , ( T ) ' s are expressed
assembly are represented as as
]
+Ms,(r)) r,5+ Os,(r) Cs,(r)d~,,j
sleeve and dielectric surfaces are given by
R¢ = Y'~Ac[h,(T)] c [r(r, z 3, t ) - T~mb],
X[Mi-I,j(T) TiP-I,j+ Mi,j-I(T) TiS-1 Rs, = 2 A ~ [ h , ( T ) ] s L [T(r3, z, t) - Tamb],
+Mi,j+1(Y) Tp,j+l 4- msl(T ) Tamb] Rd = 2 A d [ h r ( T ) ] d [ T ( r , O, t) - Tamb] •
(llb)
for the sleeve surface, where
References
Msl(r ) = [hr(T)]sl Ai+l/2,j;
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[3] J.C. Tonnerre, D. Brion, P. Palluel and A.M. Shroff, Appl.
X (Mi_,,j(T) + M i + , , j ( T ) + M,,j+,(T) Surf. Sci. 16 (1983) 238.
[4] G. Eng and H.K.A. Kan, Appl. Surf. Sci. 8 (1981) 81.
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