7
Semiconductor STS9014
NPN Silicon Transistor
Description
• General purpose application
• Switching application
Features
• Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.)
• Low noise : NF=10dB(Max.) at f=1KHz
• Complementary pair with STS9015
Ordering Information
Type NO. Marking Package Code
STS9014 STS9014 TO-92
Outline Dimensions unit : mm
3.45±0.1
4.5±0.1
2.25±0.1
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ.
2.54 Typ.
1 2 3
1.20±0.1
PIN Connections
0.38
1. Emitter
2. Base
3. Collector
KST-9017-000 1
STS9014
Absolute maximum ratings (Ta=25°°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 60 V
Collector-Emitter voltage VCEO 50 V
Emitter-Base voltage VEBO 5 V
Collector current IC 150 mA
Emitter current IE -150 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector cut-off current ICBO VCB=50V, IE=0 - - 50 nA
Emitter cut-off current IEBO VEB=5V, IC=0 - - 100 nA
*
DC current gain hFE VCE=5V, IC=1mA 100 - 1000 -
Collector-Emitter saturation voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Transistion frequency fT VCE=10V, IC=1mA 60 - - MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz - 2 3.5 pF
VCB=6V, IC=0.1mA,
Noise figure NF - - 10 dB
f=1KHz, Rg=10KΩ
* : hFE rank / B : 100 ~ 300, C : 200 ~ 600, D : 400 ~ 1000.
KST-9017-000 2
STS9014
Electrical Characteristic Curves
Fig. 1 PC –Ta Fig. 2 IC -VBE
Fig. 3 IC -VCE Fig. 4 hFE -IC
Fig. 5 VCE(sat) -IC
KST-9017-000 3