InnotionYP2233WDatasheetV2 1
InnotionYP2233WDatasheetV2 1
ports.
Pin Description
Pin No. Symbol Description
1 VCCB Supply voltage for bias
3 RF IN RF input
Power on/off control voltage. Apply >2.5VDC to power down the three power
5 VCTR amplifier stages. Apply 0VDC to power up. If function is not desired, pin5 may
be connected to GND.
6, 7 VREF1, VREF2 Bias current control voltage for stage1, stage2
9, 10, 11, 12 RF OUT/VCC2 RF output and supply voltage for stage2
14 DET Output power detect
15 VCCD Supply voltage for power detector
16 VCC1 Supply voltage for Stage1
2, 4, 8, 13 NC/GND No connection or ground
PKG Base GND Ground connection
Electrical Specifications
(VCC1=VCC2 =VCCB=5.0V, TOP=+25°C as measured on the evaluation board, unless otherwise noted)
Specification
Parameter Unit Condition
Min. Typ. Max.
Frequency Range 1.2 1.25 1.3 GHz
Output Power@1dB Compression 33.5 34 34.5 dBm @1.25GHz
Gain, |S21| 26.5 27 27.5 dB @1.25GHz
Power Supply
Reference Voltage 1, VREF1 2.65 V
Reference Voltage 2, VREF2 2.65 V
Quiescent Current (Total), ICQ 240 mA VREF1=VREF2=2.65V
Reference Current (Total), IREF 5 mA Total Current of VREF1+VREF2
Specification
Parameter Unit Condition
Min. Typ. Max.
Frequency Range 1.6 1.63 1.65 GHz
Output Power@1dB Compression 34 34.5 34.7 dBm @1.63GHz
Gain, |S21| 25.5 26 26.5 dB @1.63GHz
Power Supply
Reference Voltage 1, VREF1 2.68 V
Reference Voltage 2, VREF2 2.68 V
Quiescent Current (Total), ICQ 280 mA VREF1=VREF2=2.68V
Typical Performance
(Frequency range: 870MHz~890MHz)
Narrowband Gain & Return Loss Power Gain vs. Input Power
40 32
35 S11 30
30 S21
28
25
20 26
S-Parameter(dB)
15
24
10
Gain(dB)
5 22
0
20
-5
18
-10
870MHz
-15 16 880MHz
-20 890MHz
14
-25
-30 12
870 875 880 885 890 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Frequency(MHz) Pin(dBm)
36
34
32
P1dB(dBm)
30
28
26
24
22
20
870 875 880 885 890
Frequency(GHz)
Application Schematic
(Frequency range: 870MHz~890MHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.78V, ICQ=340mA, TOP=+25°C)
VCC
47uF
VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ
16 15 14 13
VCC1 VCCD DET GND
Z=11.5Ω Z=50Ω
2 NC RFOUT 11 E=12.9deg E=12.2deg
F=890MHz 100pF RF OUT
Z=50Ω F=890MHz
E=32.9deg INNOTION
RF IN
F=890MHz
3 RF IN YP2233W RFOUT 10 9.1pF 5.6pF
4 GND RFOUT 9
10pF 10pF
57.6Ω
10uF
VREF
Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.
2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.
RFGND 1 oz Cu --
FR-4 4.5
PCS 1 oz Cu --
FR-4 4.5
GND 1oz Cu
Typical Performance
(Frequency range: 1.2GHz~1.3GHz)
Narrowband Gain & Return Loss Power Gain vs. Input Power
45 32
40 30
S11
35 S21
28
30
25 26
S-Parameter(dB)
20
24
15
Gain(dB)
10 22
5
20
0
18
-5
1.2GHz
-10 16 1.25GHz
-15 1.3GHz
14
-20
-25 12
1.20 1.22 1.24 1.26 1.28 1.30 -30 -25 -20 -15 -10 -5 0 5 10
Frequency(GHz) Pin(dBm)
40
35
P1dB(dBm)
30
25
20
15
1.19 1.20 1.21 1.22 1.23 1.24 1.25 1.26 1.27 1.28 1.29 1.30 1.31
Frequency(GHz)
Application Schematic
(Frequency range: 1.2GHz~1.3GHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.65V, ICQ=240mA, TOP=+25°C)
VCC
47uF
VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ
16 15 14 13
VCC1 VCCD DET GND
Z=14.5Ω Z=50Ω
2 NC RFOUT 11 E=17.3deg E=8deg
F=1.2GHz 100pF RF OUT
Z=50Ω F=1.2GHz
E=20deg INNOTION
RF IN
F=1.2GHz
3 RF IN YP2233W RFOUT 10 8.2pF
PKG Base
3pF
4 GND RFOUT 9
10pF 10pF
10uF
VREF
Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.
2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.
RFGND 1 oz Cu --
FR-4 4.5
PCS 1 oz Cu --
FR-4 4.5
GND 1oz Cu
Typical Performance
(Frequency range: 1.6GHz~1.63GHz)
Narrowband Gain & Return Loss Power Gain vs. Input Power
32
40
35 30
S11
30 S21
28
25
20 26
S-Parameter(dB)
15
24
10
Gain(dB)
5 22
0
20
-5
18
-10
1.605GHz
-15 16 1.615GHz
-20 1.625GHz
14
-25
-30 12
1.60 1.61 1.62 1.63 -30 -25 -20 -15 -10 -5 0 5 10
Frequency(GHz) Pin(dBm)
40
35
P1dB(dBm)
30
25
20
15
1.60 1.61 1.62 1.63
Frequency(GHz)
Application Schematic
(Frequency range: 1.6GHz~1.63GHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.68V, ICQ=280mA, TOP=+25°C)
VCC
47uF
VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ
16 15 14 13
VCC1 VCCD DET GND
Z=14.5Ω Z=50Ω
2 NC RFOUT 11 E=23deg E=11.5deg
F=1.6GHz 100pF RF OUT
Z=50Ω F=1.6GHz
E=18.5deg INNOTION
RF IN
F=1.6GHz
3 RF IN YP2233W RFOUT 10 4.3pF
4 GND RFOUT 9
10pF 10pF
10uF
VREF
Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.
2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.
Typical Performance
(Frequency range: 1.9GHz~2.0GHz)
Narrowband Gain & Return Loss Power Gain vs. Input Power
32
40
S11 30 1.94GHz
32
S21 1.96GHz
28 1.98GHz
24
16 26
S-Parameter(dB)
8 24
Gain(dB)
0 22
-8 20
-16 18
-24 16
-32 14
-40 12
1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
Frequency(GHz) Pin(dBm)
40
35
P1dB(dBm)
30
25
20
15
1.94 1.95 1.96 1.97 1.98
Frequency(GHz)
Application Schematic
(Frequency range: 1.9GHz~2.0GHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.78V, ICQ=340mA, TOP=+25°C)
VCC
47uF
VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ
16 15 14 13
VCC1 VCCD DET GND
Z=14.5Ω Z=50Ω
2 NC RFOUT 11 E=27deg E=12.5deg
F=1.9GHz 100pF RF OUT
Z=50Ω F=1.9GHz
E=13.5deg INNOTION
RF IN
F=1.9GHz
3 RF IN YP2233W RFOUT 10 2.4pF
4 GND RFOUT 9
10pF 10pF
57.6Ω
10uF
VREF
Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.
2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.
Typical Performance
(Frequency range: 2.1GHz~2.2GHz)
Narrowband Gain & Return Loss Power Gain vs. Input Power
32
40
S11 30 2.10GHz
32
S21 2.14GHz
28 2.17GHz
24
16 26
S-Parameter(dB)
8 24
Gain(dB)
0 22
-8 20
-16 18
-24 16
-32 14
-40 12
2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 -30 -25 -20 -15 -10 -5 0 5 10 15
Frequency(GHz) Pin(dBm)
35
P1dB(dBm)
30
25
20
15
2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20
Frequency(GHz)
Application Schematic
(Frequency range: 2.1GHz~2.2GHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.83V, ICQ=440mA, TOP=+25°C)
VCC
47uF
VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ
16 15 14 13
VCC1 VCCD DET GND
1 VCCB RFOUT 12
/VCC2 1.6nH
Z=14.5Ω Z=50Ω
2 NC RFOUT 11 E=30deg E=9.2deg
F=2.1GHz 100pF RF OUT
Z=50Ω F=2.1GHz
E=21.6deg INNOTION
RF IN
F=2.1GHz
3 RF IN YP2233W RFOUT 10 2.7pF
PKG Base
0.5pF
4 GND RFOUT 9
10pF 10pF
57.6Ω
10uF
VREF
Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.
2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.
Packaging Diagram
K COMMON DIMENSIONS
D
(UNITS OF MEASURE = MILLIMETER)
L
SYMBOL MIN NOM MAX
LASER MARK A 0.70 0.75 0.80
PIN 1 I.D. A1 0 0.02 0.05
R A3 0.203 REF
b 0.25 0.30 0.35
E2
E
D 3.95 4.00 4.05
E 3.95 4.00 4.05
D2
e
D2 2.00 2.15 2.25
E2 2.00 2.15 2.25
e 0.60 0.65 0.70
K 0.375 — —
L 0.35 0.40 0.45
R 0.09 — —
b
A
NOTE:
(A3)
Recommended Temperature
Sn95.5Ag4.0Cu0.5