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InnotionYP2233WDatasheetV2 1

The YP2233W is a broadband power amplifier designed for 700-2700MHz applications, offering a typical gain of 26dB and a maximum output power of 34dBm at 5V supply. It features integrated output power detection, ESD protection, and operates with a quiescent current of 280mA. The device is suitable for various applications including wireless communication systems and is housed in a compact 16-pin QFN package.

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0% found this document useful (0 votes)
63 views22 pages

InnotionYP2233WDatasheetV2 1

The YP2233W is a broadband power amplifier designed for 700-2700MHz applications, offering a typical gain of 26dB and a maximum output power of 34dBm at 5V supply. It features integrated output power detection, ESD protection, and operates with a quiescent current of 280mA. The device is suitable for various applications including wireless communication systems and is housed in a compact 16-pin QFN package.

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Copyright
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INNOTION YP2233W

700-2700MHz Power Amplifier

RoHS & Pb-Free Product


Features
VCC1 VCCD DET NC

■ 700~2700MHz Operating Range 16 15 14 13

■ 3.3~5.0V Supply Voltage RF OUT/


VCCB 1 12
VCC2
■ 26dB Gain (Typ.) @1.6GHz
NC 2 11 RF OUT
■ 34dBm P1dB @ Supply Voltage =5V

■ 280mA Quiescent Current RF IN 3 10 RF OUT

■ >15dB Input Return Loss


Active Bias
NC 4 9 RF OUT
■ Integrated Output Power Detector

■ ESD protection all ports above 1000V HBM 5 6 7 8

VCTR VREF1 VREF2 NC


Product Description
Functional Block Diagram
The YP2233W is a high dynamic range

broadband power amplifier in a surface mount Applications


package. The two-stage amplifier provides a
■ 802.11b/g/n Access Point
typical gain of 26dB, while being able to
■ 2.4GHz ISM Wireless Equipment
achieve high performance for 0.7–2.7 GHz
■ PCS Communication Systems
applications (It needs different matching
■ Broadband Spread-Spectrum Systems
circuit for different freq range) with up to
■ High Power Amplifiers Application
+34dBm of compressed 1dB power, typical
■ Final Stage Amplifiers for repeaters
bias condition is 5V at 280mA.
■ BD Compass
The device is manufactured on an advanced
■ LoRa
InGaP Heterojunction Bipolar Transistor (HBT)
Ordering Information
process. The device incorporates proprietary
■ YP2233W BroadBand Power Amplifier
bias circuitry to compensate for variations in
■ YP2233W EVB-1 1.2-1.3GHz Evaluation Board
linearity and current draw over temperature.
■ YP2233W EVB-2 1.5-1.7GHz Evaluation Board
The YP2233W is assembled in a 16-pin,
■ YP2233W EVB-3 2.4-2.5GHz Evaluation Board
4mm×4mm, QFN package. It is internally
■ YP2233W EVB-4 868-915MHz Evaluation Board
integrated with ESD protection circuitry on all

ports.

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INNOTION YP2233W
700-2700MHz Power Amplifier

Pin Description
Pin No. Symbol Description
1 VCCB Supply voltage for bias
3 RF IN RF input
Power on/off control voltage. Apply >2.5VDC to power down the three power
5 VCTR amplifier stages. Apply 0VDC to power up. If function is not desired, pin5 may
be connected to GND.
6, 7 VREF1, VREF2 Bias current control voltage for stage1, stage2
9, 10, 11, 12 RF OUT/VCC2 RF output and supply voltage for stage2
14 DET Output power detect
15 VCCD Supply voltage for power detector
16 VCC1 Supply voltage for Stage1
2, 4, 8, 13 NC/GND No connection or ground
PKG Base GND Ground connection

Absolute Maximum Ratings


Caution! ESD Sensitive Device.
Parameter Symbol Rating Unit
ESD Rating: Class1C
Input RF Power RF IN +10 dBm Value: Passes≥1000V min.
Test: Human Body Model (HBM)
VCC1,VCC2, Standard: JEDEC Standard JESD22-A114
Supply Voltage -0.5 to +8.0 V
VCCB,VCCD
ESD Rating: Class IV
VREF1, Value: Passes ≥1000V min.
Reference Voltage -0.5 to +3.0 V
VREF2 Test: Charged Device Model (CDM)
Standard: JEDEC Standard JESD22-C101
Operating Ambient
TOP -40 to +85 °C
Temperature MSL Rating: Level 3 at +260 °C convection reflow
Standard: JEDEC Standard J-STD-020
Storage Temperature TST -40 to +150 °C

Electrical Specifications

(VCC1=VCC2 =VCCB=5.0V, TOP=+25°C as measured on the evaluation board, unless otherwise noted)

Specification
Parameter Unit Condition
Min. Typ. Max.
Frequency Range 1.2 1.25 1.3 GHz
Output Power@1dB Compression 33.5 34 34.5 dBm @1.25GHz
Gain, |S21| 26.5 27 27.5 dB @1.25GHz
Power Supply
Reference Voltage 1, VREF1 2.65 V
Reference Voltage 2, VREF2 2.65 V
Quiescent Current (Total), ICQ 240 mA VREF1=VREF2=2.65V
Reference Current (Total), IREF 5 mA Total Current of VREF1+VREF2

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INNOTION YP2233W
700-2700MHz Power Amplifier

Specification
Parameter Unit Condition
Min. Typ. Max.
Frequency Range 1.6 1.63 1.65 GHz
Output Power@1dB Compression 34 34.5 34.7 dBm @1.63GHz
Gain, |S21| 25.5 26 26.5 dB @1.63GHz
Power Supply
Reference Voltage 1, VREF1 2.68 V
Reference Voltage 2, VREF2 2.68 V
Quiescent Current (Total), ICQ 280 mA VREF1=VREF2=2.68V

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INNOTION YP2233W
700-2700MHz Power Amplifier

Typical Performance
(Frequency range: 870MHz~890MHz)

Narrowband Gain & Return Loss Power Gain vs. Input Power
40 32

35 S11 30
30 S21
28
25
20 26
S-Parameter(dB)

15
24
10

Gain(dB)
5 22

0
20
-5
18
-10
870MHz
-15 16 880MHz
-20 890MHz
14
-25
-30 12
870 875 880 885 890 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6

Frequency(MHz) Pin(dBm)

P1dB vs. Frequency


40
P1dB
38

36

34

32
P1dB(dBm)

30

28

26

24

22

20
870 875 880 885 890
Frequency(GHz)

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INNOTION YP2233W
700-2700MHz Power Amplifier

Application Schematic
(Frequency range: 870MHz~890MHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.78V, ICQ=340mA, TOP=+25°C)
VCC

47uF

10uF 10uF 10uF

VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ

16 15 14 13
VCC1 VCCD DET GND

1 VCCB RFOUT 12 3.9nH


/VCC2

Z=11.5Ω Z=50Ω
2 NC RFOUT 11 E=12.9deg E=12.2deg
F=890MHz 100pF RF OUT
Z=50Ω F=890MHz
E=32.9deg INNOTION
RF IN
F=890MHz
3 RF IN YP2233W RFOUT 10 9.1pF 5.6pF

9.1pF PKG Base

4 GND RFOUT 9

VCTR VREF1 VREF2 GND


5 6 7 8

10pF 10pF

57.6Ω

10uF

VREF

Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.

2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.

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INNOTION YP2233W
700-2700MHz Power Amplifier

Evaluation Board Layout


(Frequency range: 870MHz~890MHz)
Board Size 50mm×50mm, Board Thickness 1mm, Board Material FR-4 (εr=4.5)

Evaluation Board Top View Layer Detail Physical Characteristics

Cross Section Name Thickness Material εr


Via14
RFS 1 oz Cu --

Core 1 0.23 mm FR-4 4.5

RFGND 1 oz Cu --

FR-4 4.5

PCS 1 oz Cu --

FR-4 4.5

GND 1oz Cu

Circuit Component Designations and Values

Component Description Manufacturer


L1, L2 3.9nH Inductor ATC
C1, C2 9.1pF Chip Capacitor DLC
C3 5.6pF Chip Capacitor DLC
C5, C7, C9, C11, C14 100pF Chip Capacitor TDK
C4, C6, C8, C10, C12 10uF Chip Capacitor TDK
C13 47uF Capacitor AVX
R1 57.6ohm TDK

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INNOTION YP2233W
700-2700MHz Power Amplifier

Typical Performance
(Frequency range: 1.2GHz~1.3GHz)

Narrowband Gain & Return Loss Power Gain vs. Input Power
45 32

40 30
S11
35 S21
28
30
25 26
S-Parameter(dB)

20
24
15

Gain(dB)
10 22

5
20
0
18
-5
1.2GHz
-10 16 1.25GHz
-15 1.3GHz
14
-20
-25 12
1.20 1.22 1.24 1.26 1.28 1.30 -30 -25 -20 -15 -10 -5 0 5 10

Frequency(GHz) Pin(dBm)

P1dB vs. Frequency


45
P1dB

40

35
P1dB(dBm)

30

25

20

15
1.19 1.20 1.21 1.22 1.23 1.24 1.25 1.26 1.27 1.28 1.29 1.30 1.31

Frequency(GHz)

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INNOTION YP2233W
700-2700MHz Power Amplifier

Application Schematic
(Frequency range: 1.2GHz~1.3GHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.65V, ICQ=240mA, TOP=+25°C)
VCC

47uF

10uF 10uF 10uF

VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ

16 15 14 13
VCC1 VCCD DET GND

1 VCCB RFOUT 12 3.9nH


/VCC2

Z=14.5Ω Z=50Ω
2 NC RFOUT 11 E=17.3deg E=8deg
F=1.2GHz 100pF RF OUT
Z=50Ω F=1.2GHz
E=20deg INNOTION
RF IN
F=1.2GHz
3 RF IN YP2233W RFOUT 10 8.2pF
PKG Base
3pF

4 GND RFOUT 9

VCTR VREF1 VREF2 GND


5 6 7 8

10pF 10pF

10uF

VREF

Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.

2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.

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INNOTION YP2233W
700-2700MHz Power Amplifier

Evaluation Board Layout


(Frequency range: 1.2GHz~1.3GHz)
Board Size 50mm×50mm, Board Thickness 1mm, Board Material FR-4 (εr=4.5)

Evaluation Board Top View Layer Detail Physical Characteristics

Cross Section Name Thickness Material εr


Via14
RFS 1 oz Cu --

Core 1 0.23 mm FR-4 4.5

RFGND 1 oz Cu --

FR-4 4.5

PCS 1 oz Cu --

FR-4 4.5

GND 1oz Cu

Circuit Component Designations and Values

Component Description Manufacturer


L1, L2 3.9nH Inductor ATC
C1 3pF Chip Capacitor DLC
C2 8.2pF Chip Capacitor DLC
C3, C5, C7, C9, C11 100pF Chip Capacitor TDK
C4, C6, C8, C10, C12 10uF Chip Capacitor TDK
C13 47uF Capacitor AVX

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INNOTION YP2233W
700-2700MHz Power Amplifier

Typical Performance
(Frequency range: 1.6GHz~1.63GHz)

Narrowband Gain & Return Loss Power Gain vs. Input Power
32
40
35 30
S11
30 S21
28
25
20 26
S-Parameter(dB)

15
24
10

Gain(dB)
5 22

0
20
-5
18
-10
1.605GHz
-15 16 1.615GHz
-20 1.625GHz
14
-25
-30 12
1.60 1.61 1.62 1.63 -30 -25 -20 -15 -10 -5 0 5 10
Frequency(GHz) Pin(dBm)

P1dB vs. Frequency


45
P1dB

40

35
P1dB(dBm)

30

25

20

15
1.60 1.61 1.62 1.63

Frequency(GHz)

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INNOTION YP2233W
700-2700MHz Power Amplifier

Application Schematic
(Frequency range: 1.6GHz~1.63GHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.68V, ICQ=280mA, TOP=+25°C)
VCC

47uF

10uF 10uF 10uF

VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ

16 15 14 13
VCC1 VCCD DET GND

1 VCCB RFOUT 12 3.9nH


/VCC2

Z=14.5Ω Z=50Ω
2 NC RFOUT 11 E=23deg E=11.5deg
F=1.6GHz 100pF RF OUT
Z=50Ω F=1.6GHz
E=18.5deg INNOTION
RF IN
F=1.6GHz
3 RF IN YP2233W RFOUT 10 4.3pF

2pF PKG Base

4 GND RFOUT 9

VCTR VREF1 VREF2 GND


5 6 7 8

10pF 10pF

10uF

VREF

Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.

2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.

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INNOTION YP2233W
700-2700MHz Power Amplifier

Evaluation Board Layout


(Frequency range: 1.6GHz~1.63GHz)
Board Size 50mm×50mm, Board Thickness 1mm, Board Material FR-4 (εr=4.5)

Evaluation Board Top View

Circuit Component Designations and Values

Component Description Manufacturer


L1, L2 3.9nH Inductor ATC
C1 2pF Chip Capacitor DLC
C2 4.3pF Chip Capacitor DLC
C3, C5, C7, C9, C11 100pF Chip Capacitor TDK
C4, C6, C8, C10, C12 10uF Chip Capacitor TDK
C13 47uF Capacitor AVX

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INNOTION YP2233W
700-2700MHz Power Amplifier

Typical Performance
(Frequency range: 1.9GHz~2.0GHz)

Narrowband Gain & Return Loss Power Gain vs. Input Power
32
40

S11 30 1.94GHz
32
S21 1.96GHz
28 1.98GHz
24

16 26
S-Parameter(dB)

8 24

Gain(dB)
0 22

-8 20

-16 18

-24 16

-32 14

-40 12
1.90 1.91 1.92 1.93 1.94 1.95 1.96 1.97 1.98 1.99 2.00 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
Frequency(GHz) Pin(dBm)

P1dB vs. Frequency


45
P1dB

40

35
P1dB(dBm)

30

25

20

15
1.94 1.95 1.96 1.97 1.98

Frequency(GHz)

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INNOTION YP2233W
700-2700MHz Power Amplifier

Application Schematic
(Frequency range: 1.9GHz~2.0GHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.78V, ICQ=340mA, TOP=+25°C)
VCC

47uF

10uF 10uF 10uF

VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ

16 15 14 13
VCC1 VCCD DET GND

1 VCCB RFOUT 12 3.9nH


/VCC2

Z=14.5Ω Z=50Ω
2 NC RFOUT 11 E=27deg E=12.5deg
F=1.9GHz 100pF RF OUT
Z=50Ω F=1.9GHz
E=13.5deg INNOTION
RF IN
F=1.9GHz
3 RF IN YP2233W RFOUT 10 2.4pF

0.9pF PKG Base

4 GND RFOUT 9

VCTR VREF1 VREF2 GND


5 6 7 8

10pF 10pF

57.6Ω

10uF

VREF

Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.

2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.

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INNOTION YP2233W
700-2700MHz Power Amplifier

Evaluation Board Layout


(Frequency range: 1.9GHz~2.0GHz)
Board Size 50mm×50mm, Board Thickness 1mm, Board Material FR-4 (εr=4.5)

Evaluation Board Top View

Circuit Component Designations and Values

Component Description Manufacturer


L1, L2 3.9nH Inductor ATC
C1 0.9pF Chip Capacitor DLC
C2 2.4pF Chip Capacitor DLC
C3, C5, C7, C9, C11 100pF Chip Capacitor TDK
C4, C6, C8, C10, C12 10uF Chip Capacitor TDK
C13 47uF Capacitor AVX
R1 57.6ohm TDK

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INNOTION YP2233W
700-2700MHz Power Amplifier

Typical Performance
(Frequency range: 2.1GHz~2.2GHz)

Narrowband Gain & Return Loss Power Gain vs. Input Power
32
40
S11 30 2.10GHz
32
S21 2.14GHz
28 2.17GHz
24

16 26
S-Parameter(dB)

8 24

Gain(dB)
0 22

-8 20

-16 18

-24 16

-32 14

-40 12
2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 -30 -25 -20 -15 -10 -5 0 5 10 15
Frequency(GHz) Pin(dBm)

P1dB vs. Frequency


40
P1dB

35
P1dB(dBm)

30

25

20

15
2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20

Frequency(GHz)

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INNOTION YP2233W
700-2700MHz Power Amplifier

Application Schematic
(Frequency range: 2.1GHz~2.2GHz)
(Test Condition: VCC1=VCC2=5.0V, VREF1=VREF2=2.83V, ICQ=440mA, TOP=+25°C)
VCC

47uF

10uF 10uF 10uF

VCCD DET
100pF 100pF
10pF
10uF
3.9nH 1.5kΩ

16 15 14 13
VCC1 VCCD DET GND

1 VCCB RFOUT 12
/VCC2 1.6nH

Z=14.5Ω Z=50Ω
2 NC RFOUT 11 E=30deg E=9.2deg
F=2.1GHz 100pF RF OUT
Z=50Ω F=2.1GHz
E=21.6deg INNOTION
RF IN
F=2.1GHz
3 RF IN YP2233W RFOUT 10 2.7pF
PKG Base
0.5pF

4 GND RFOUT 9

VCTR VREF1 VREF2 GND


5 6 7 8

10pF 10pF

57.6Ω

10uF

VREF

Notes:
1. Pin5 is power down pin. Apply >2.5 VDC to power down the three power amplifier stages. Apply 0VDC
to power up. If function is not desired, pin5 may be connected to GND.

2. Pin14, 15 are active power detection circuit ports, if function is not desired, pin14, 15 may be
connected to GND.

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INNOTION YP2233W
700-2700MHz Power Amplifier

Evaluation Board Layout: (Frequency range: 2.1GHz~2.2GHz)


Board Size 50mm×50mm, Board Thickness 1mm, Board Material FR-4 (εr=4.5)

Evaluation Board Top View

Circuit Component Designations and Values

Component Description Manufacturer


L1 3.9nH Inductor ATC
L2 1.6nH Inductor ATC
C1 0.5pF Chip Capacitor DLC
C2 2.7pF Chip Capacitor DLC
C3, C5, C7, C9, C11 100pF Chip Capacitor TDK
C4, C6, C8, C10, C12 10uF Chip Capacitor TDK
C13 47uF Capacitor AVX
R1 57.6ohm TDK

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INNOTION YP2233W
700-2700MHz Power Amplifier

Packaging Diagram

K COMMON DIMENSIONS
D
(UNITS OF MEASURE = MILLIMETER)

L
SYMBOL MIN NOM MAX
LASER MARK A 0.70 0.75 0.80
PIN 1 I.D. A1 0 0.02 0.05
R A3 0.203 REF
b 0.25 0.30 0.35

E2
E
D 3.95 4.00 4.05
E 3.95 4.00 4.05
D2
e
D2 2.00 2.15 2.25
E2 2.00 2.15 2.25
e 0.60 0.65 0.70
K 0.375 — —
L 0.35 0.40 0.45
R 0.09 — —
b
A

NOTE:
(A3)

ALL DIMENSIONS REFER TO JEDEC STANDARD MO-220 WEED-4.


A1

Innotion, Inc. All rights reserved. http://www.innotion.com.cn 2023-11-16 Version 2.1


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INNOTION YP2233W
700-2700MHz Power Amplifier

PCB Land Pattern and Stencil Outline


(Units: millimeters)

PCB Land Pattern (Top View) Stencil Outline

Combined PCB Land Pattern and Stencil Outline

Innotion, Inc. All rights reserved. http://www.innotion.com.cn 2023-11-16 Version 2.1


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INNOTION YP2233W
700-2700MHz Power Amplifier

Recommended Solder Temperature

Recommended Temperature

Sn95.5Ag4.0Cu0.5

Innotion, Inc. All rights reserved. http://www.innotion.com.cn 2023-11-16 Version 2.1


For sales, orders, and technical support, please contact us, Phone: (86-512-62997198) Page 21 of 22
INNOTION YP2233W
700-2700MHz Power Amplifier

Tape dimensions and Orientation

Reel dimensions and Orientation

Innotion, Inc. All rights reserved. http://www.innotion.com.cn 2023-11-16 Version 2.1


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