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Baritt Diodes

The BARITT diode is a type of transit-time device that operates based on thermionic emission. It consists of a narrow n-region sandwiched between two heavily doped p-regions or metal contacts. When a DC voltage is applied, the depletion regions will widen until they meet at punch-through. The BARITT diode suffers from narrow bandwidth and low output power due to the slow thermal injection of carriers and initial positive resistance lowering input energy. It operates with low noise but at low frequencies.

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756 views6 pages

Baritt Diodes

The BARITT diode is a type of transit-time device that operates based on thermionic emission. It consists of a narrow n-region sandwiched between two heavily doped p-regions or metal contacts. When a DC voltage is applied, the depletion regions will widen until they meet at punch-through. The BARITT diode suffers from narrow bandwidth and low output power due to the slow thermal injection of carriers and initial positive resistance lowering input energy. It operates with low noise but at low frequencies.

Uploaded by

josephinemalathi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd

Microwave Devices VII

ECE402 Microwave Engineering


Lecture 40
BARITT Diode
BARrier Injected Transit-Time (BARITT) diode belongs to the
class of Transit - Time Devices that works on the principle of
thermionic emission

They have low noise levels of the order of 15 dB, in comparison to


IMPATT, TRAPATT or Gunn diodes

They suffer from narrow bandwidth and low output powers

The frequency of operation is low due to slow thermal injection of


charge carries.

The overall power output is also low as the initial phase of charge
injection follows positive resistance, thereby taking away energy from
input bias

1
BARITT Diode

It consists of a n region sandwiched between two heavily doped p


regions. Or alternately a n region sandwiched between two metal
contacts, forming Schottky barrier

When a d.c. voltage is applied with the plus on the left hand contact,
the right hand depletion layer will widen but the device draws no
current. This goes on until the two depletion layers meet, a situation
2 called reach-through or punch-through.
BARITT Diode

The electric field rises steadily from


the injecting contact to the other one
while the carrier density decreases
simultaneously. One may then assume
that near the injecting contact the main
factors governing carrier transport will
be thermionic injection and diffusion
whereas in the region of higher field
strength the electric field will be
dominant

3
BARITT Diode

I The contact region


where thermionic
injection prevails. This
region lies between the
injecting contact and
the point of zero
electric field (potential
maximum)

II The diffusion region where carrier transport is by diffusion mainly.


This region stretches from the potential maximum to a point where the
d.c. field has risen to such a value that diffusion may be neglected.
Necessarily the choice of this point will be somewhat arbitrary.
III The drift region, comprising the rest of the diode, where the electric
4 field is dominant
BARITT Diode

Voltage and
current are out
of phase

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