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TFET Mine

The document discusses the need for tunnel field-effect transistors (TFETs) in electronics design. TFETs are needed because MOSFETs have limitations like a subthreshold swing limited to 60 mV/decade, which makes it difficult to reduce power supply voltages. TFETs do not have this limitation and can allow for lower operating voltages and reduced power consumption compared to MOSFETs. The document introduces TFETs and outlines some of their working principles and advantages over MOSFETs for low-power applications.

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harismansuri
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106 views8 pages

TFET Mine

The document discusses the need for tunnel field-effect transistors (TFETs) in electronics design. TFETs are needed because MOSFETs have limitations like a subthreshold swing limited to 60 mV/decade, which makes it difficult to reduce power supply voltages. TFETs do not have this limitation and can allow for lower operating voltages and reduced power consumption compared to MOSFETs. The document introduces TFETs and outlines some of their working principles and advantages over MOSFETs for low-power applications.

Uploaded by

harismansuri
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd

1

Why we need TFET?


Outline
 Electronics design Objectives
 Why We Need TFET?
 Introduction to TFET
 Problems with TFET and Remedy
 Working Principle
 Proposed Device Structure and Simulation
 Results
 Improvement in Performance
 Conclusion
 References
2
Electronics Design Objectives
• Compact design
 Portable, consuming less space.
 Packing density large.
• Power/energy consumption should be low.
 Large battery life.
 Less thermal issues.
• Speed of system should be high.
 Less delay,
 Fast response
• Functionality.
 No of functions or tasks to be performed should be large.
 Large throughput.
• Cost or cost per bit or cost per function should be small.
 Increase in functionality should not increase cost significantly.

3
Why We Need TFET?

• Carrier transport in MOSFET is


governed by thermionic
emission.
• TE limits its Subthreshold
swing limited to 60 mV/dec.
• Short Channel effects and
higher OFF current.
• Difficulty in reducing power
Supply Voltage.

4
5
Limited Sub-threshold Slope (60mV/decade)
• With gate length reduction, VDD
c
c
• Same On-state performance requires: same ION :
Needs Overdrive (VDD-VT) to be constant
c
c

• VDD and VT proportionally


c
c

• Lowering VT by 60mV increases the IOFF (leakage


power) by 10 times
(due to incompressible SS limit)
6
TFET as a remedy

• Advantages:
• No sub-threshold limit
• Reduced Short-Channel-Effects
• Low Stand-By power (reduced OFF-
current)

• Disadvantages:
• Low Drive current (Low On-state current).
Possible solution: High mobility materials

• Ambipolar current. Possible solution: Reduce


Tunneling at channel/drain interface
7
Working Principle: TFET

Energy [eV]
Energy [eV]

e-

•TFET offer much lower OFF


Location [mm] Location [mm] current.
•And reduced power voltage,
while keeping overdrive
TFET VGs=0V TFET VGs=1V factor(VDD-VT ) sufficiently
OFF state VDs=1V ON state VDs=1V high.

IEEE-IMPACT-2017
Thank-You

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