2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. !External dimensions (Units : mm)
2SD1760
1.50.3
6.50.2 5.1 +0.2 0.1 C0.5 2.3 +0.2 0.1 0.50.1
2SD1864
6.80.2 2.50.2
5.5 +0.3 0.1
9.50.5
0.9
1.5
!Structure Epitaxial planar type NPN silicon transistor
0.9 0.550.1 2.30.2 2.30.2 1.00.2
(1) (2) (3) 0.50.1
2.54 2.54
14.50.5
0.75
0.650.1
2.5
0.65Max.
1.0
4.40.2
0.9
(1) (2) (3)
1.05
0.450.1
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
ROHM : ATV
(1) Emitter (2) Collector (3) Base
!Absolute maximum ratings (Ta = 25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 60 50 5 3 4.5 15 1 150 55~+150 Unit V V V A (DC) A (Pulse) *1 W (Tc =25C)*2 W C C
Junction temperature Storage temperature
W
*1 Single pulse, P = 100ms *2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
2SD1760 / 2SD1864
Transistors
!Electrical characteristics (Ta = 25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. 60 50 5 82 Typ. 0.5 90 40 Max. 1 1 1 390 Unit V V V A A V MHz pF IC = 50A IC = 1mA IE = 50A VCB = 40V VEB = 4V IC/IB = 2A/0.2A VCE = 3V, IC = 0.5A VCE = 5V, IE = 500mA, f = 30MHz VCB = 10V, IE = 0A, f = 1MHz Conditions
* * *
Measured using pulse current.
!Packaging specifications and hFE
Package Code Type 2SD1760 2SD1864 hFE PQR PQR Basic ordering unit (pieces) TL 2500 Taping TV2 2500 -
hFE values are classified as follows:
Item hFE
P 82~180
Q 120~270
R 180~390
!Electrical characteristic curves
10 5
3.0
VCE = 3V
COLLECTOR CURRENT : IC (A)
Ta = 25C
45mA 50mA
COLLECTOR CURRENT : IC (A)
2.5 2.0
COLLECTOR CURRENT : IC (A)
2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 BASE TO EMITTER VOLTAGE : VBE (V) Ta = 100C 25C -25C
40mA 35mA 30mA 25mA 20mA
3.0 2.5 2.0 1.5
20mA 15mA
50mA 45mA 40mA 35mA 30mA 25mA
Ta = 25C
15mA
1.5
10mA
10mA
1.0 0.5 0 0
5mA
1.0
IB = 5mA
0.5 0 0
PC = 15W
IB = 0mA
10
20
30
40
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation characteristics
1000 500
DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE
Fig.2 Grounded emitter output characteristics ( )
1000 500 200 100 50 20 10 5 2 25C -25C Ta = 100C
Fig.3 Grounded-emitter output characteristics( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta = 25C
10 5 2 1 0.5 0.2 IC/IB = 50 0.1 0.05 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1 20 10
VCE = 3V
Ta = 25C
200 100 50 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1
VCE = 5V
3V
10
1 0.01 0.02 0.05 0.1 0.2
0.5
10
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current( )
Fig.5 DC current gain vs. collector curren( )
Fig.6 Collector-emitter saturation voltage vs. collector current
2SD1760 / 2SD1864
Transistors
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V)
5 2 1 0.5 0.2 0.1 0.05 0.02 VCE (sat) 1 2 5 10 Ta = 100C 25C Ta = -25C VBE (sat) 25C 100C
TRANSITION FREQUENCY : fT (MHz)
lC/lB = 10
500 200 100 50 20 10 5 2 1 1 2 5 10 20
Ta = 25C VCE = 5V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
1000
1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5
Ta = 25C f = 1MHz IE = 0A
-25C
0.01 0.01 0.02 0.05 0.1 0.2 0.5
50 100 200
5001000
10 20
50 100
COLLECTOR CURRENT : IC (A)
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current
Fig.8 Gain bandwidth product vs. emitter current
Fig.9 Collector output capacitance vs. collector-base voltage
TRANSIENT THERMAL RESISTANCE : Rth (C/W)
5
PW
COLLECTOR CURRENT : IC (A)
5
COLLECTOR CURRENT : IC (A)
2
PW
VCE=5v IC=0.2A 100
Pw =1
Pw
2 1
DC
=1
c Se 0m Sec m 00
=1
0m
1 0.5 DC 0.2 0.1 0.05 0.02 Ta = 25C Single pulse 0.01 * 0.1 0.2 0.5 1
=1
00
s*
ms *
0.5 0.2 0.1 0.05 Ta=25C Single nonrepetitive 0.02 pulse 0.2 0.5 1
10
10 20
50 100
0.1
10
100
1Sec 10Sec 100Sec
10 20
50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
TIME : T (ms)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area (2SD1760)
Fig.11 Transient thermal resistance (2SD1760)
Fig.12 Safe operating area (2SD1864)
TRANSIENT THERMAL RESISTANCE : Rt h (C/W)
100
10
0.1
10
100
10Sec 100Sec1000Sec
TIME : T (ms)
Fig.13 Transient thermal resistance (2SD1864)
