DSEP 60-06A DSEP 60-06AT
HiPerFREDTM Epitaxial Diode
with soft recovery
Preliminary Data
VRSM V 600 VRRM V 600 DSEP 60-06A DSEP 60-06AT Type
A C
IFAV = 60 A VRRM = 600 V trr = 35 ns
TO-247 AD (A-Type) TO-268 AA (AT-Type)
C A C (TAB)
A A C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight
Conditions TVJ = TVJM TC = 110C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 1.6 A; L = 180 H VA = 1.5VR typ.; f = 10 kHz; repetitive
Maximum Ratings 70 60 600 0.3 0.2 -55...+175 175 -55...+150 A A Features A
q
mJ A C C C W Nm g
q q q q q q
International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TC = 25C mounting torque typical
230 0.8...1.2 6
Applications
q
q q
Symbol IR x
Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 60 A; TVJ = 150C TVJ = 25C
Characteristic Values typ. max. 650 2.5 1.39 2.04 0.65 0.25 mA mA V V K/W K/W ns
q q q
VF y RthJC RthCH trr IRM
Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100C
Advantages
q
35 8.3
A
q q
Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified
Dimensions see [Link]
2000 IXYS All rights reserved
1-2
018
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 60-06A DSEP 60-06AT
160 A 140 IF 120 4000 nC 3000
TVJ= 100C VR = 300V
80 A 60
TVJ= 100C VR = 300V
TVJ= 25C
100
Qr 2000
TVJ=100C
80
IF=120A IF= 60A IF= 30A
IRM 40
IF=120A IF= 60A IF= 30A
TVJ=150C
60 40 20 0 0 1 VF 2 V 0 100 A/ms 1000 -diF/dt 0 0 200 400 1000 20
ms 1000 600 A/ 800 -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 3 Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 s tfr 1.2
2.0
TVJ= 100C VR = 300V
1.5 Kf 1.0
trr 120 110
tfr IF=120A IF= 60A IF= 30A
VFR
0.8
10
I RM
100 0.5 5 0.4
Qr
90 80 0 0
TVJ= 100C IF = 60A
0 200 400 600 -diF/dt 800 A/ ms 1000 200 400 0.0 ms 1000 600 A/ 800 diF/dt
0.0 0 40 80 120 C 160 TVJ
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W 0.1 ZthJC 0.01
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.0385
0.001
0.0001 0.00001
DSEP 60-06A
0.0001
0.001
0.01
0.1 t
Fig. 7 Transient thermal resistance junction to case
018
NOTE: Fig. 2 to Fig. 6 shows typical values
2000 IXYS All rights reserved
2-2
