Pb Free Plating Product
ISSUED DATE :2006/04/27
REVISED DATE :
N-CH BVDSS
30V
N-CH RDS(ON) 33m
N-CH ID
6A
P-CH BVDSS
-30V
N-CH RDS(ON) 50m
N-CH ID
-5.3A
GSS4501S
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS4501S provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Low On-resistance
*Schottky Diode Included
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
5.80
4.80
3.80
0
0.40
0.19
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
6.20
5.00
4.00
8
0.90
0.25
Ratings
N-channel P-channel
REF.
M
H
L
J
K
G
Millimeter
Min.
Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Unit
VDS
30
-30
VGS
20
20
Continuous Drain Current
ID @TA=25
-5.3
Continuous Drain Current
ID @TA=70
4.8
-4.7
20
-20
Pulsed Drain Current
IDM
Total Power Dissipation
PD @TA=25
Linear Derating Factor
2.0
0.016
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
62.5
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GSS4501S
Max.
Unit
/W
Page: 1/7
ISSUED DATE :2006/04/27
REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
1.0
3.0
VDS=VGS, ID=250uA
gfs
12
VDS=10V, ID=6A
IGSS
100
nA
VGS= 20V
100
uA
VDS=30V, VGS=0
mA
VDS=24V, VGS=0
33
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
IDSS
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
RDS(ON)
50
Test Conditions
VGS=10V, ID=6A
VGS=4.5V, ID=5A
Total Gate Charge
Qg
8.2
Gate-Source Charge
Qgs
Gate-Drain (Miller) Change
Qgd
4.3
Td(on)
Tr
5.2
Td(off)
18.8
Tf
4.4
Ciss
645
Output Capacitance
Coss
150
Reverse Transfer Capacitance
Crss
95
Symbol
Min.
Typ.
Max.
Unit
VSD
0.5
IS=1.7A, VGS=0V
Reverse Recovery Time
Trr
16
ns
Reverse Recovery Charge
Qrr
nC
IS=1.7A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
nC
ID=6A
VDS=24V
VGS=4.5V
ns
VDS=15V
ID=1A
VGS=10
RG=3.3
RD=15
pF
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain & Schottky Diode
Parameter
2
Forward On Voltage
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
GSS4501S
Page: 2/7
ISSUED DATE :2006/04/27
REVISED DATE :
P-Channel Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th)
-1.0
-3.0
VDS=VGS, ID=-250uA
gfs
8.5
VDS=-10V, ID=-5.3A
IGSS
100
nA
VGS= 20V
-1
uA
VDS=-30V, VGS=0
-25
uA
VDS=-24V, VGS=0
50
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
2
IDSS
RDS(ON)
90
Test Conditions
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
Total Gate Charge
Qg
20
Gate-Source Charge
Qgs
3.5
Gate-Drain (Miller) Change
Qgd
Td(on)
12
Tr
20
Td(off)
45
Tf
27
Ciss
790
Output Capacitance
Coss
440
Reverse Transfer Capacitance
Crss
120
Symbol
Min.
Typ.
Max.
Unit
VSD
-1.2
IS=-2.6A, VGS=0V
Reverse Recovery Time
Trr
33.4
ns
Reverse Recovery Charge
Qrr
52
nC
IS=-2.6A, VGS=0V
dI/dt=100A/ s
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
nC
ID=-5.3A
VDS=-15V
VGS=-10V
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
pF
VGS=0V
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad.
GSS4501S
Page: 3/7
ISSUED DATE :2006/04/27
REVISED DATE :
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
GSS4501S
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2006/04/27
REVISED DATE :
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
GSS4501S
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ISSUED DATE :2006/04/27
REVISED DATE :
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GSS4501S
Page: 6/7
ISSUED DATE :2006/04/27
REVISED DATE :
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSS4501S
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