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2SC3199 NPN Transistor Specifications

This document provides specifications for a 2SC3199 NPN silicon epitaxial planar transistor intended for switching and audio frequency amplifier applications. The transistor comes in a TO-92 plastic package and is rated for a maximum power dissipation of 400mW at a junction temperature of 150°C. Key electrical characteristics include a DC current gain that varies between 70-140 for group O transistors up to 350-700 for group L, a cutoff current under 0.1μA, and a transition frequency above 80MHz.

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238 views2 pages

2SC3199 NPN Transistor Specifications

This document provides specifications for a 2SC3199 NPN silicon epitaxial planar transistor intended for switching and audio frequency amplifier applications. The transistor comes in a TO-92 plastic package and is rated for a maximum power dissipation of 400mW at a junction temperature of 150°C. Key electrical characteristics include a DC current gain that varies between 70-140 for group O transistors up to 350-700 for group L, a cutoff current under 0.1μA, and a transition frequency above 80MHz.

Uploaded by

co_stel817842
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

2SC3199

NPN Silicon Epitaxial Planar Transistor

for switching and AF amplifier applications.


The transistor is subdivided into four groups, O,
Y, G and L, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.

1. Emitter 2. Collector 3. Base


TO-92 Plastic Package

Absolute Maximum Ratings (Ta = 25 C)


O

Parameter

Symbol

Value

Unit

Collector Base Voltage

VCBO

50

Collector Emitter Voltage

VCEO

50

Emitter Base Voltage

VEBO

Collector Current

IC

150

mA

Emitter Current

IE

-150

mA

Power Dissipation

Ptot

400

mW

Tj

150

Tstg

- 55 to + 150

Junction Temperature
Storage Temperature Range

C
C

Characteristics at Ta = 25 C
O

Parameter
DC Current Gain
at VCE = 6 V, IC = 2 mA

Current Gain Group O


Y
G
L

Collector Base Cutoff Current


at VCB = 50 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 10 mA
Transition Frequency
at VCE = 10 V, IC = 1 mA
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Noise Figure
at VCE = 6 V, IC = 0.1 mA, f = 1 KHz, RG = 10 K

Page 1 of 2

Symbol

Min.

Typ.

Max.

Unit

hFE
hFE
hFE
hFE

70
120
200
350

140
240
400
700

ICBO

0.1

IEBO

0.1

VCE(sat)

0.1

0.25

fT

80

MHz

Cob

3.5

pF

NF

10

dB

7/15/2011

Page 2 of 2

7/15/2011

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