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BU2522AF Power Transistor Specs

This document provides specifications for the BU2522AF silicon NPN power transistor from SavantIC Semiconductor. It is a high voltage, high speed switching transistor in a TO-3PFa package for use in horizontal deflection circuits of high resolution monitors. The transistor has a maximum collector current of 10A, collector-emitter voltage of 800V, and total power dissipation of 45W at an operating junction temperature of 150°C.

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264 views3 pages

BU2522AF Power Transistor Specs

This document provides specifications for the BU2522AF silicon NPN power transistor from SavantIC Semiconductor. It is a high voltage, high speed switching transistor in a TO-3PFa package for use in horizontal deflection circuits of high resolution monitors. The transistor has a maximum collector current of 10A, collector-emitter voltage of 800V, and total power dissipation of 45W at an operating junction temperature of 150°C.

Uploaded by

Darknezz
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BU2522AF

DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching

APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors.

PINNING

PIN DESCRIPTION

1 Base

2 Collector

3 Emitter

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter 1500 V

VCEO Collector-emitter voltage Open base 800 V

IC Collector current (DC) 10 A

ICM Collector current-peak 25 A

IB Base Collector current (DC) 6 A

IBM Base current-peak 9 A

Ptot Total power dissipation TC=25 45 W

Tj [Link] junction temperature 150

Tstg Storage temperature -65~150


SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BU2522AF

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

VCEO(SUS) Collector-emitter breakdown voltage IC=0.1A ;IB=0;L=25mH 800 V

V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V

VCEsat Collector-emitter saturation voltage IC=6.0A ;IB=1.2A 5.0 V

VBEsat Base-emitter saturation voltage IC=6.0A ;IB=1.2A 1.3 V

VCE=BVCES; VBE=0 0.25


ICES Collector cut-off current mA
Tj=125 2.0

IEBO Emitter cut-off current VEB=7.5V; IC=0 0.1 mA

hFE-1 DC current gain IC=1A ; VCE=5V 10

hFE-2 DC current gain IC=6A ; VCE=5V 5 7 8

CC Collector capacitance IE=0 ; VCB=10V; f=1MHz 115 pF

2
SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors BU2522AF

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)

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