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MOS Device Characterization

The document analyzes the frequency response of NMOS and PMOS transistors by extracting their model parameters and calculating figures of merit like intrinsic gain and frequency. It presents the design, results, observations and extracted parameters. Key parameters like transit time (τ), intrinsic gain (gm/Id), and cutoff frequency (ft) are calculated and plotted for both NMOS and PMOS devices using minimum dimensions. A table compares all the relevant model parameters between NMOS and PMOS transistors.

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Kiran Somayaji
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209 views5 pages

MOS Device Characterization

The document analyzes the frequency response of NMOS and PMOS transistors by extracting their model parameters and calculating figures of merit like intrinsic gain and frequency. It presents the design, results, observations and extracted parameters. Key parameters like transit time (τ), intrinsic gain (gm/Id), and cutoff frequency (ft) are calculated and plotted for both NMOS and PMOS devices using minimum dimensions. A table compares all the relevant model parameters between NMOS and PMOS transistors.

Uploaded by

Kiran Somayaji
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd

Title:

To extract the model parameters of NMOS and PMOS devices and find the analog FOM (intrinsic gain
and frequency). Using minimum device dimensions.

Circuit Diagram:

VDS VDS

VGS VGS

Design:

MOS Transistor Figure of Merit (FOM): It is an indication of frequency response can be obtained
from the parameter

gm
ω o= [1]
cg
Where:

W
gm=μn ×c ox × ×(V GS −V TH ) [a]
L
W
cg=c ox × [b]
L
Substituting 1 and 2 in A,

W
μn × c ox × ×(V GS−V TH )
L
ω o=
W
c ox ×
L
μn
ω o= (V GS −V TH )
L2
But in saturation ( V GS −V TH )=V DS

μn
ω o= (V DS )
L2

L2
Also τ =
μ n × V DS
τ is the Transit time delay: time taken for electrons to move from source to drain terminal along the
channel.

Results and Observations

NMOS plots:

PMOS Plots:
NMOS and PMOS Parameters:
PARAMETER NMOS PMOS
S
beff 3.97m 845m
betaeff 5.77m 1m
cbb 5.38f 8.44f
cbd -1.89f -4.89f
cbdbi -2a 287a
cbg -500a -597a
cbs -3f -2.96f
cbsbi -500a -1.58a
cdb -1.89f -5.47f
cdd 2.62f 7.89f
cddbi 1.62a 2.07f
cdg -735a -2.42f
cds 1.66a -1.53a
cgb -459a -13.7a
cgbovl 26.6a 40.4a
cgd -726a -3f
cgdbi 6.39a -2.35f
cgdovl 733a 650a
cgg 3.72f 3.67f
cggbi 2.23f 2.33f
cgs -2.54f -651a
cgsbi -1.8f -527z
cgsovl 733a 650a
cjd 1.89f 5.18f
cjs 2.5f 2.95f
csb -3.04f -2.96f
csd -6.02a 812z
csg -2.49f -654a
css 5.53f 3.61f
cssbi 2.3f 3.63a
ft    
fug 39.4G 13.6G
gbd 97.4p 3.71
gbs 0 317p
gds 38.2u 18.7u
gm 922u 314u
gmb 278u 47.5u
gmbs 278u 47.5u
gmoverid 3.72 3.37
i1 248u 140m
i3 -248u -93.1u
i4 -3.76p -140m
ibd -3.76p -140m
ibe -4.66p -140m
ibs -93.3a -21.3f
ibulk -3.76p -140m
id 248u 140m
idb 93.3a -140m
ide 248u 140m
ids 248u -93.1u
is -248u -93.1u
isb 93.3a -21.3f
ise 248u 140m
isub 3.76p -219a
pwr 223u 126m
qb -2.17f -1.39f
qbd -1.92f -3.1f
qbi -2.15f 1.39f
qbs -421z -198z
qd -754z -1.36f
qdi -630z 839a
qg 3.45f 2.75f
qgi 2.77f 2.23f
qinv 2.12m 428u
qsi -619a 1.19a
qsrco -1.28f 1.15a
region 2 2
reversed 0 1
ron 3.63K 9.67K
rout 26.2K 53.4K
self_gain 24.1 16.7
type 0 1
ueff 47.2m 7.67m
vbs 0 -900m
vdb 900m 0
vds 900m -900m
vdsat 213m -310m
vdss 213m -310m
vearly 6.48 7.46K
vfbeff -1.11 -1
vgb 900m 0
vgd 0 0
vgs 900m -900m
vgsteff 353m 475m
vgt 353m -575m
vsat_marg 687m -590m
vsb 0 900m
vth 547m -325m

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