VELAGAPUDI RAMAKRISHNA SIDDHARTHA ENGINEERING COLLEGE

KANURU, VIJAYAWADA

A Project Report

On

“DESIGN OF CMOS INVERTER LAYOUT”

For The Course

VLSI DESIGN LAB

SUBMITTED BY

THOTA. KRUPA SAGAR (218W1A04P3)

S. MOHANKIRAN (228W5A0428)

Y. KOUSHIK (218W1A04P9)

N. V.S. SIDDARTHA (218W1A04N3)

THIRD YEAR ELECTRONICS AND COMMUNICATION ENGINEERING

SUBMITTED TO

VELAGAPUDI RAMAKRISHNA SIDDHARTHA ENGINEERING COLLEGE

Mr. V. SIVA REDDY

Dr. PRATIKHYA RAUT

For The Academic Year 2023-2024

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 TABLE OF CONTENT

[Link] LIST OF CONTENTS [Link]

1. ABSTRACT 3

2. INTRODUCTION 3-4

3. METHODOLOGY 4-5

4. CIRCUIT DIAGRAM 5

5. RESULT ANALYSIS 6

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6. CONCLUSION

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 ABSTRACT

This project presents the design and layout of a CMOS (Complementary Metal-
Oxide-Semiconductor) inverter, a fundamental building block in digital integrated
circuits. The inverter is designed to operate in a specified technology node with a
target supply voltage and desired output voltage levels. The design process involves
transistor sizing to achieve optimal performance in terms of speed, power
consumption, and noise margin.

The design methodology includes DC and transient analyses to ensure proper biasing
and switching characteristics. Transistor sizes are carefully selected to achieve
symmetrical rise and fall times, maintaining a balanced drive strength for both n-
channel (NMOS) and p-channel (PMOS) transistors. Simulation results demonstrate
the inverter's ability to meet the specified requirements.

The layout abstract provides a visual representation of the physical arrangement of

transistors and interconnects on the integrated circuit. Following the design rules of
the chosen technology, the layout ensures manufacturability and reliability. The
abstract includes symbolic representation, physical layout, component labeling,
dimensions, and layer information.

INTRODUCTION

In the ever-evolving landscape of integrated circuit design, the development of

efficient and reliable digital circuits is paramount. The CMOS (Complementary Metal-
Oxide-Semiconductor) inverter, a fundamental building block in this domain, plays a
crucial role in shaping the performance characteristics of digital systems. This project
delves into the comprehensive design and layout of a CMOS inverter, aiming to
provide insights into the intricacies of its creation and its relevance in contemporary
digital circuitry.

The CMOS inverter, consisting of both n-channel (NMOS) and p-channel (PMOS)
transistors, serves as the cornerstone for various digital applications, including
processors, memory units, and communication devices. As technology nodes
continue to shrink, the need for optimized and scalable designs becomes increasingly
vital. This project addresses this demand by focusing on a specific technology node
and systematically designing the inverter to meet specified requirements.

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The primary objectives of this project include the determination of optimal transistor
sizes to achieve desired speed and power characteristics, as well as the creation of a
physical layout adhering to the constraints and guidelines of the chosen technology.
Through rigorous simulation and analysis, this project aims to demonstrate the
inverter's functionality, ensuring its suitability for integration into larger digital
circuits.

By presenting a detailed account of the design and layout processes, this project
contributes to the broader understanding of CMOS circuitry design principles.
Moreover, the outcomes of this work provide a foundational platform for the creation
and enhancement of more complex digital systems, fostering advancements in the
field of integrated circuit technology.

Methodology

• Problem Definition and Objective Setting:

• Clearly define the objectives of the project, including the desired performance
metrics for the CMOS inverter (e.g., speed, power consumption, noise
margins).
• Identify specific challenges and constraints to be addressed during the design
and layout phases.

• Technology Node and Tool Selection:

• Choose a specific technology node for the CMOS inverter design (e.g., 45nm)
based on project requirements.
• Select Electronic Design Automation (EDA) tools for simulation, layout, and
verification.

• Transistor Sizing and Symmetry Optimization:

• Determine the sizes of NMOS and PMOS transistors to meet performance
goals.
• Optimize transistor sizes to achieve symmetry in rise and fall times for
balanced operation.
• Utilize transistor sizing rules and trade-off analyses.

• DC Analysis:
• Conduct DC analysis to ensure proper biasing of NMOS and PMOS transistors.
• Validate that the transistors operate in the saturation region under various
input conditions.
• Adjust biasing to achieve the desired output voltage levels.

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• Transient Analysis and Speed Optimization:
• Perform transient analysis to evaluate the dynamic response of the inverter.
• Optimize transistor sizes to minimize rise and fall times while maintaining
signal integrity.
• Simulate input transitions and assess the inverter's speed performance.

• Layout Design:
• Create the physical layout of the CMOS inverter based on the optimized
transistor sizes.
• Adhere to design rules and guidelines of the chosen technology to ensure
manufacturability.
• Include necessary components such as wells, contacts, and metal layers.

• Symbolic Representation and Documentation:

• Develop a symbolic representation of the CMOS inverter layout, illustrating
the arrangement of transistors and interconnects.
• Document the design process, including rationale for transistor sizing, layout
considerations, and any deviations from the initial objectives.

• Simulation and Validation:

• Conduct extensive simulations using EDA tools to validate the inverter's
performance.
• Verify that the design meets or exceeds specified metrics, including speed,
power consumption, and noise margins.

• Peer Review and Feedback Integration:

• Facilitate a peer review process to gather feedback on the design and layout.
• Integrate constructive feedback to refine and improve the design.

Circuit diagram

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RESULT ANALYSIS

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 CONCLUSION

In conclusion, this project embarked on a comprehensive exploration of the

design and layout of a CMOS inverter, an essential component in digital
integrated circuits. Through meticulous transistor sizing, DC and transient
analyses, and adherence to technology-specific design rules, the project
aimed to achieve optimal performance in terms of speed, power consumption,
and reliability.

The initial objectives were successfully met through the systematic

optimization of NMOS and PMOS transistor sizes, ensuring a balanced and
symmetrical response during both rising and falling transitions. The DC
analysis confirmed proper biasing, and transient analysis validated the
inverter's dynamic behavior, meeting the specified speed requirements