Scribd
Upload
297 views6 pages

P N Junction Diode

This experiment aimed to study the I-V characteristic curve of a p-n junction diode under forward and reverse bias. The apparatus used included a p-n junction diode, a high resistance rheostat, a voltmeter, an ammeter and connecting leads. In forward bias, the current initially increases slowly with voltage and then sharply. The initial forward voltage is greater than the knee voltage. In reverse bias, a very small saturation current flows due to minority carriers. At a certain reverse voltage, the current suddenly increases due to breaking of covalent bonds. Observations of the forward and reverse bias characteristics were recorded.

Uploaded by

adityavaish739
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
297 views6 pages

P N Junction Diode

This experiment aimed to study the I-V characteristic curve of a p-n junction diode under forward and reverse bias. The apparatus used included a p-n junction diode, a high resistance rheostat, a voltmeter, an ammeter and connecting leads. In forward bias, the current initially increases slowly with voltage and then sharply. The initial forward voltage is greater than the knee voltage. In reverse bias, a very small saturation current flows due to minority carriers. At a certain reverse voltage, the current suddenly increases due to breaking of covalent bonds. Observations of the forward and reverse bias characteristics were recorded.

Uploaded by

adityavaish739
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

# EXPERIMENT NO -8

AIM -

To study the I-V characteristic curve

of a
p-n junction diode in
forward
brats I reverse bias .

APPARATUS REQUIRED -

A P -
N
Junction Diode apparatus with
a
high resistance rheostat ,
voltmeter ,

leads
ammeter , connecting .

THEORY INVOLVED -

- A p-n junction is a Semiconductor device


obtained contact
by putting in a p -

type type Semiconductor


Semiconductor
with an n -

FORWARD
type Semiconductor
BIASING - The
p -

is
forward biased by connecting the p
-

and
type to the terminal of battery n -

to terminal of battery
type we - .

Initially when voltage is increased


current increases
the
slowly in the

beginning ,
then Sharply .

forward current
flours only ef
•

The
initial forward voltage is greater than a

certain minimum voltage called knee


Nottage .
A said
REVERSE BIASING -

p -
n
junction is
to be biased
reverse if the p -

type
connected to terminal and
crystal is -
ne

connected to terminal
n -

type is the tire

of the bias
battery .

A current 1in WA)


very small turns
due to minority carriers .

current is
The called Saturation
current as it is Independent of the
reverse bias .

At a certain reverse voltage ,


the
current Suddenly increases due to
covalent bonds
breaking of .

It is called genu breakdown Nottage .

-880
blank
→ on the
left
page
.

BABB

1mA)

BEREA

GABBA
MA)
# OBSERVATIONS -

1. FORWARD BIAS CHARACTERSTICS -

Voltmeter
Range of 0 3V
-

Least Count
of voltmeter =

got
= OOSV

Ammeter
Range of = 0 -
15mA

Count Ammeter
Least
of =

2;÷ = 0.25mA -
# REVERSE BIAS CHARACTERS-116s -

Voltmeter
Range of = 0 -
gov

Least Count
of voltmeter =

1,5-0=1
.5v

Ammeter
Range of = 0 -
1.5mA

Count Ammeter
Least
of =

0¥20 =
0.025mA

= 25µA
I bias
# RESULT The
forward reverse
-

characteristics of p-n junction diode


has been plotted .

PRECAUTIONS -

1.
Measuring Instruments must be of
proper range
.

2. Make all connections meat clean &


,

tight .

3
key should be used in circuit and
'

opened when the circuit is not in use .

tnoid bias
4.
applying forward Voltage
beyond breakdown .

# SOURCES OF ERROR -

i. The connections
may
not be tight .

2. The Junction diode be faulty


may
.

You might also like