AON7406

30V N-Channel MOSFET

General Description Product Summary

• The AON7406 uses advanced trench technology and VDS 30V

design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A
This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V) < 17mW
purpose applications.
RDS(ON) (at VGS=4.5V) < 23mW
Typical ESD protection HBM Class 2
• RoHS and Halogen-Free Compliant

100% UIS Tested

100% Rg Tested

DFN 3x3A
Top View Bottom View D
Top View

S D
S D
S D G
G D
Pin 1 S
Pin 1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 25
ID
Current TC=100°C 15 A
C
Pulsed Drain Current IDM 50
Continuous Drain TA=25°C 9
IDSM A
Current TA=70°C 7
C
Avalanche Current IAS, IAR 19 A
C
Avalanche energy L=0.1mH EAS, EAR 18 mJ
TC=25°C 15.5
PD W
Power Dissipation B TC=100°C 6
TA=25°C 3.1
PDSM W
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RqJA
Maximum Junction-to-Ambient A D Steady-State 60 75 °C/W
Maximum Junction-to-Case Steady-State RqJC 6.6 8 °C/W

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 AON7406

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current mA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±16V 10 mA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.2 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 50 A
VGS=10V, ID=9A 14 17
mW
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 20 24
VGS=4.5V, ID=8A 18 23 mW
gFS Forward Transconductance VDS=5V, ID=9A 40 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 15 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 600 740 888 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 77 110 145 pF
Crss Reverse Transfer Capacitance 50 82 115 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12 15 18 nC
Qg(4.5V) Total Gate Charge 6 7.5 9 nC
VGS=10V, VDS=15V, ID=9A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.67W, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3W 19 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time IF=9A, dI/dt=500A/ms 6 8 10 ns
Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/ms 14 18 22 nC
A. The value of RqJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE
SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL
REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS.

AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at:
http://www.aosmd.com/terms_and_conditions_of_sale

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 AON7406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
10V
VDS=5V
25 4V 25

5V
20 20
3V
ID (A)

ID(A)
15 15

10 10 125°C

5 VGS=2.5V 5 25°C

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.8
Normalized On-Resistance
25
1.6 VGS=10V
VGS=4.5V ID=9A
20
RDS(ON) (mW)

1.4
17
15
5
1.2 2
10 VGS=10V VGS=4.5V
ID=8A
10
1
5

0 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Temperature (°C) 0
Gate Voltage (Note E) 18
Figure 4: On-Resistance vs. Junction
Temperature (Note E)

40 1.0E+02
ID=9A
35 1.0E+01
40
1.0E+00
30
RDS(ON) (mW)

1.0E-01 125°C
IS (A)

125°C
25
1.0E-02
20 25°C
1.0E-03

15 25°C 1.0E-04

10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON7406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=9A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400 Coss

2
200

Crss
0 0
0 3 6 9 12 15 0 5 10
15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200
10ms
RDS(ON) 10ms 160 TJ(Max)=150°C
10.0 limited
100ms TC=25°C
Power (W)
ID (Amps)

120 17
1.0 DC 1ms 5
10ms 80 2
TJ(Max)=150°C 10
0.1
TC=25°C 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased 18 Junction-to-
Figure 10: Single Pulse Power Rating
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZqJC.RqJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJC Normalized Transient
Thermal Resistance

RqJC=8°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON7406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 20
TA=25°C
IAR (A) Peak Avalanche Current

TA=100°C
16

Power Dissipation (W)

TA=150°C
12
10

TA=125°C 8

1 0
1 10 100 1000 0 25 50 75 100 125 150
Time in avalanche, tA (ms) TCASE (°C)
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

30 10000

25 TA=25°C
1000
Current rating ID(A)

20
17
Power (W)

100 5
15
2
10 10
10
5

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZqJA.RqJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZqJA Normalized Transient
Thermal Resistance

1 RqJA=75°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON7406

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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