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s9013 Galaxy

The document provides the production specifications for the NPN Silicon Epitaxial Planar Transistor S9013, highlighting its features, applications, and maximum ratings. It includes electrical characteristics, typical performance metrics, and package dimensions for the SOT-23 package. Additionally, ordering information and soldering footprint details are provided.

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21 views5 pages

s9013 Galaxy

The document provides the production specifications for the NPN Silicon Epitaxial Planar Transistor S9013, highlighting its features, applications, and maximum ratings. It includes electrical characteristics, typical performance metrics, and package dimensions for the SOT-23 package. Additionally, ordering information and soldering footprint details are provided.

Uploaded by

shenbagaramankvp
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor S9013

FEATURES
z High Collector Current.(IC= 500mA）
Pb
Lead-free
z Complementary To S9012.
z Excellent HFE Linearity.
z Power dissipation.(PC=300mW)

APPLICATIONS
z High Collector Current.

SOT-23

ORDERING INFORMATION
Type No. Marking Package Code

S9013 J3 SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Dissipation 300 mW
Tj,Tstg Junction and Storage Temperature -55~150 ℃

Document number: BL/SSSTC082 [Link]


Rev.A 1
BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor S9013

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V

Collector cut-off current ICBO VCB=40V,IE=0 0.1 μA

Collector cut-off current ICEO VCE=20V,IB=0 0.1 μA

Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA

VCE=1V,IC=50mA 120 400


DC current gain hFE
VCE=1V,IC=500mA 40

Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA 0.6 V

Base-emitter saturation voltage VBE(sat) IC=500mA, IB= 50mA 1.2 V

VCE=6V, IC= 20mA


Transition frequency fT 150 MHz
f=30MHz

CLASSIFICATION OF hFE(1)
Rank L H J

Range 120-200 200-350 300-400

Document number: BL/SSSTC082 [Link]


Rev.A 2
BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor S9013

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC082 [Link]


Rev.A 3
BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor S9013

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm
PACKAGE INFORMATION

Device Package Shipping

S9013 SOT-23 3000/Tape&Reel

Document number: BL/SSSTC082 [Link]


Rev.A 4
[Link]

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