Physics of Semiconductor Devices Question Bank

Section-A
1 Write the expression for Fermi - Dirac distribution function.
2 What is direct band gap semiconductor?
3 Why is the transistor called a current controlled device?
4 What do you understand by drift and diffusion currents in a semiconductor?
5 Mention the important components of laser device?
What are the relevant equations that must be solved in general for a semiconductor device
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problem.
7 Write the relation between mobility and Hall coefficient?
Illustrate why holes are found at the top of the valence band, whereas electrons are found at
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the bottom of the conduction band?
9 In a bipolar transistor which region is wider and which region is thinner? Why?
How many Bravais lattices are possible for tetragonal crystal system? Mention the lattice
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parameters for the same system.
11 Define the term drift velocity.
Find an expression for electron current in the n-type material of a forward biased p-n
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junction.
13 Explain physical significance of mass action law in semiconductors.
14 What are the consequences of early effect in BJT?
Define the mechanism of electrical conduction in a typical semiconductor like germanium or
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silicon.
16 What are the advantages of Schottky diodes over PN junction diodes?
17 Mention the basic principle in the propagation of light signal through the optical fibre.
What are the terminals of a BJT and how are they doped? Explain the physical structure of an
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NPN transistor.
19 Define the following terms i) Space lattice (ii) Unit cell
20 List out the difference between spontaneous and stimulated emission of radiation?
Section-B
What are charge carriers in semiconductors. State law of mass action. From this law obtain
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expression for Fermi level in an intrinsic semiconductor.
With a neat diagram explain the working of a PN junction diode in forward bias And reverse
22 bias and show the effects of temperature on its VI characteristics.
Explain the working of P-N junction diode with the help of energy band diagram.
What are Miller indices? Give the expression for interplanar spacing for a cubic system in
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terms of lattice constant and Miller indices.
Develop electron energy versus momentum curves in a single-crystal material, which yields
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the concept of direct and indirect bandgap semiconductor materials
Develop the Fermi-Dirac probability function, which describes the statistical distribution of
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electrons among the allowed energy levels, and define the Fermi energy level.
Obtain an expression for the Schrodinger' s time independent one-dimensional equation for an
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electron of mass m moving in a potential V(x).
Describe the direct and indirect band gap semiconductors with E-K diagrams.
How can these diagrams be utilised to calculate effective mass of electron.
Hall measurements are made on an p-type semiconductor bar of 500 µm wide and 20 µm thick.
The Hall contacts are displaced 3µm from each other in the direction of current flow of 3 mA.
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The voltage between the Hall contacts with a magnetic field of 10KG pointing out of the plane
of the sample 4.2 mV and the magnetic field is reversed the voltage changes to -2.8 mV. What
is hole
concentration and mobility?
 Develop the concept of allowed and forbidden electron energy bands in a single-crystal
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material, and describe conduction and valence energy bands in a semiconductor material.
Define effective mass and derive the expression for effective mass of an electron in periodic
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potential field.
What is hall effect? Obtain expression for Hall voltage in terms of Hall coefficient. The Hall
30 coefficient of –3.68 x 10-5 m3 /C. What is type of charge carriers? Also calculate the carrier
concentration.
31 Set up the one-dimensional time independent Schrodinger wave equation.
Under equilibrium condition, what is the probability of an electron state being occupied if it is
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located at the Fermi level?
Section-C
What is intrinsic semiconductor and explain the formation extrinsic semiconductors through
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doping?
Why a contact potential is developed across an open-circuited P-N junction? Specify the
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parameters on which the contact potential depends.?
35 Explain effect of temperature on Fermi energy level of an extrinsic semiconductor?
36 Derive the expression for intrinsic carrier concentration.
Describe the Hall Effect in a semiconductors.
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Write the applications of Hall Effect.
38 What is the effect of temperature on Fermi Dirac distribution function?
Explain the formation of p-n junction.
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Describe the variation of width of depletion layer under forward and reverse bias.
40 Distinguishes between intrinsic and extrinsic semiconductors?
41 Define valance band, conduction band, and forbidden energy gap in the energy band structure.
Explain n-type semiconductor.
42 Derive the expression for current generated due to drifting of charge carriers in semiconductors
in the presence of electric field.
Define intrinsic and extrinsic semiconductors with suitable examples. Explain the formation
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of p-type and n-type semiconductors with suitable diagrams.
44 Write brief note on Fermi Dirac distribution?
Section-D
45 Explain Working Principle of Depletion type MOSFET (n-channel).
How Transistor acts as an amplifier.
46 Draw the structure of an N- channel JFET and explain its principle of operation with
Characteristics.
47 With necessary diagram explain the input and output characteristics of CC configuration.
48 Difference Between D-MOSFET and E-MOSFET.
49 Compare N-channel with P-Channel FET’s and What are the applications of JFET?
50 Explain Working Principle of Enhancement type MOSFET (n-channel).
What are the main constructional differences between a MOSFET and a BJT? What effect do
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they have on the current conduction mechanism of a MOSFET?
52 What are the differences between BJT and FET?
53 Why CMOS technology is most useful for analog functions explain in detail?
54 What are the types of MOSFET? Explain the construction and working of Depletion MOSFET.
55 With necessary diagram explain the input and output characteristics of CE configuration.
56 Write down advantages of MOSFET.
Section-E
Calculate the critical angle and acceptance angle for a step index fiber in which the refractive
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index of core is l·53 and the refractive index of cladding IS 2.5 % less than that of core.
Describe the construction and working mechanism of solar cells.
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Broadly explain the differences between light emitting diodes and photo detectors.
59 Explain population inversion in detail?
60 Write brief note on structure and mechanism of PIN diode
 Describe the construction and the working principle of optical fibre.
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Mention the application of optical fibre in medicine.
62 Describe the construction and working principle of laser diode with the help of a neat diagram.
What are the materials are used for fabrication of LED’s?
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Explain the structure and mechanism of LED’s
64 Broadly explain the differences between light emitting diodes and photo detectors.
65 What is the acceptance angle of an optical fibre and derive an expression for it.
Explain the construction and working principle of He-Ne LASER.
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Explain the different mechanisms of losses in optical fibre.
Explain absorption, spontaneous and stimulated emission of radiation with suitable energy
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diagram.
68 What is the numerical aperture of an optical fibre and derive an expression for it.